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    M58BW Price and Stock

    Alliance Memory Inc M58BW016FB7T3F

    IC FLASH 16MBIT CFI 80PQFP
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    DigiKey M58BW016FB7T3F Reel 1,000 500
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    M58BW016FB7T3F Cut Tape 344 1
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    M58BW016FB7T3F Digi-Reel 1
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    Avnet Americas M58BW016FB7T3F Reel 8 Weeks 1,500
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    Newark M58BW016FB7T3F Reel 1,500
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    Micron Technology Inc M58BW16FB5ZA3F

    IC FLASH 16MBIT PARALLEL 80LBGA
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    Micron Technology Inc M58BW16FB4T3T-TR

    IC FLASH 16MBIT PARALLEL 80PQFP
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    DigiKey M58BW16FB4T3T-TR Cut Tape 1
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    Micron Technology Inc M58BW32FB4T3T-TR

    IC FLASH 32MBIT PARALLEL 80PQFP
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    DigiKey M58BW32FB4T3T-TR Cut Tape 1
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    Micron Technology Inc M58BW32FB5T3F-TR

    IC FLASH 32MBIT PARALLEL 80PQFP
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    Find more M58BW price and stock on Findchips.com

    M58BW Datasheets (233)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M58BW016 STMicroelectronics 16 MBIT (512KB X32, BOOT BLOCK, BURST) 3V SUPPLY FLASH MEMORIES Original PDF
    M58BW016 STMicroelectronics 16 MBIT (512KB X32, BOOT BLOCK, BURST) 3V SUPPLY Original PDF
    M58BW016BB STMicroelectronics 16 MBIT (512KB X32, BOOT BLOCK, BURST) 3V SUPPLY Original PDF
    M58BW016BB STMicroelectronics 16 MBIT (512KB X32, BOOT BLOCK, BURST) 3V SUPPLY FLASH MEMORIES Original PDF
    M58BW016BB STMicroelectronics 16 MBIT (512KB X32, BOOT BLOCK, BURST) 3V SUPPLY FLASH MEMORIES Original PDF
    M58BW016BB100T3FT STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 100NS 80PQFP T/R Original PDF
    M58BW016BB100T3T STMicroelectronics 16 MBit (512 kBit x 32, Boot Block, Burst) 3 V Supply Flash Memory Original PDF
    M58BW016BB100T3T STMicroelectronics 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Original PDF
    M58BW016BB100T6 STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 100NS 80PQFP Original PDF
    M58BW016BB100T6FT STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 100NS 80PQFP T/R Original PDF
    M58BW016BB100T6T STMicroelectronics 16 MBit (512 kBit x 32, Boot Block, Burst) 3 V Supply Flash Memory Original PDF
    M58BW016BB100T6T STMicroelectronics 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Original PDF
    M58BW016BB100ZA3FT STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 100NS 80LBGA T/R Original PDF
    M58BW016BB100ZA3T STMicroelectronics 16 MBit (512 kBit x 32, Boot Block, Burst) 3 V Supply Flash Memory Original PDF
    M58BW016BB100ZA3T STMicroelectronics 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Original PDF
    M58BW016BB100ZA6 STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 100NS 80LBGA Original PDF
    M58BW016BB100ZA6FT STMicroelectronics IC FLASH MEM PARL 2.7V TO 3.6V 16MBIT 512KX32 100NS 80LBGA T/R Original PDF
    M58BW016BB100ZA6T STMicroelectronics 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Original PDF
    M58BW016BB100ZA6T STMicroelectronics 16 MBit (512 kBit x 32, Boot Block, Burst) 3 V Supply Flash Memory Original PDF
    M58BW016BB70T3T STMicroelectronics 16 MBIT (512KB X32, BOOT BLOCK, BURST) 3V SUPPLY FLASH MEMORIES Original PDF
    ...

    M58BW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC17xx

    Abstract: PQFP80 TC17X M58BW M58BW016 M58BW016D M58BW032 MPC5554 FLNORAUT0405 NOR FLASH
    Text: M58BW NOR Flash memories Automotive Flash memory solutions with burst mode Designed for automotive applications, STMicroelectronics’ M58BW016 16Mb and M58BW032 (32Mb) Flash memories, are built on proven 0.13µm technology. Featuring a wide operating-temperature range,


    Original     		PDF M58BW M58BW016 M58BW032 FLNORAUT0405 TC17xx PQFP80 TC17X M58BW016 M58BW016D M58BW032 MPC5554 FLNORAUT0405 NOR FLASH

    AN1360

    Abstract: AN1361 M58BW016D MPC555 MPC565 MPC56X
    Text: AN1360 APPLICATION NOTE Connecting the MPC56x Spanish OAK Microcontroller to the M58BW016B/D Flash Memory CONTENTS • INTRODUCTION ■ POWER SUPPLY MANAGEMENT ■ BUS ARCHITECTURE ■ BUS OPERATIONS and TIMINGS ■ CONCLUSION ■ APPENDIX A. REGISTERS CONFIGURATION


    Original     		PDF AN1360 MPC56x M58BW016B/D M58BW016B/D M58BW016B AN1361) M58BW016D AN1360 AN1361 MPC555 MPC565

    M58BW016xB

    Abstract: M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		PDF M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016xB M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT 512Kb 56MHz

    la 7913

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT 512Kb 56MHz la 7913 JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H

    Q002

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
    Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT 512Kb 56MHz Q002 JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		PDF M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80

    M58BW32FB

    Abstract: Q002 PQFP80 M58BW16F M58BW16FT M58BW32F M58BW32FT
    Text: M58BW16F M58BW32F 16 or 32 Mbit x32, Boot Block, Burst 3.3V supply Flash memories Preliminary Data Features summary • Supply voltage – VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns) – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers ■ High performance


    Original     		PDF M58BW16F M58BW32F 75MHz PQFP80 M58BW32F M58BW16F M58BW32FB Q002 PQFP80 M58BW16FT M58BW32FT

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz

    Untitled

    Abstract: No abstract text available
    Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance


    Original     		PDF M58BW16F M58BW32F M58BW32F

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz

    unlock mobile codes

    Abstract: AN1361 M58BW016D 0x00001
    Text: AN1361 APPLICATION NOTE Tuning Block Protection on the M58BW016B Flash Memory CONTENTS • INTRODUCTION ■ ORGANIZATION ■ BLOCK PROTECTION OPTIONS ■ TUNING BLOCK PROTECTION DESCRIPTION ■ TUNING PROTECTION UNLOCK ■ PROGRAM AND ERASE A TUNING PROTECTED


    Original     		PDF AN1361 M58BW016B unlock mobile codes AN1361 M58BW016D 0x00001

    M58BW016

    Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PQFP80 M58BW016 Q002 M58BW016DT M58BW016FB PQFP80

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB

    M58BW32FB

    Abstract: M58BW32F Q002 M58BW16FB M58BW16F M58BW16FT M58BW32FT PQFP80
    Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance


    Original     		PDF M58BW16F M58BW32F PQFP80 M58BW32F M58BW16F M58BW32FB Q002 M58BW16FB M58BW16FT M58BW32FT PQFP80

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80 m58bw016xb
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		PDF M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 m58bw016xb

    LBGA80

    Abstract: No abstract text available
    Text: M58BW032BT, M58BW032BB M58BW032DT, M58BW032DB 32 Mbit 1Mb x32, Boot Block, Burst 3.3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O


    Original     		PDF M58BW032BT, M58BW032BB M58BW032DT, M58BW032DB 75MHz 128Kbit 512Kbit PQFP80 LBGA80

    F9800h-F9FFFh

    Abstract: M58BW32FB
    Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance


    Original     		PDF M58BW16F M58BW32F M58BW32F F9800h-F9FFFh M58BW32FB

    MPC56x

    Abstract: AN1360 AN1361 M58BW016D MPC500 MPC555
    Text: AN1360 APPLICATION NOTE Connecting a MPC56x Microcontroller to the M58BW016B/D Flash Memory CONTENTS • INTRODUCTION ■ POWER SUPPLY MANAGEMENT ■ BUS ARCHITECTURE ■ BUS OPERATIONS and TIMINGS ■ CONCLUSION ■ REVISION HISTORY ■ APPENDIX A. REGISTERS


    Original     		PDF AN1360 MPC56x M58BW016B/D M58BW016B AN1361) M58BW016D AN1360 AN1361 M58BW016D MPC500 MPC555

    M58BW016

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB M58BW016

    M58BW016DB

    Abstract: M58BW016xB M58BW016BB M58BW016BT M58BW016DT PQFP80
    Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		PDF M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B M58BW016DB M58BW016xB M58BW016BB M58BW016BT M58BW016DT PQFP80

    M58BW16FB

    Abstract: M58BW32FT M58BW32FB V/B/512
    Text: M58BW16F, M58BW32F Features M58BW16F, M58BW32F 16Mb or 32Mb x32, Boot Block, Burst 3.3V Supply Flash Memory Features • Security – 64-bit unique device identifier (UID) • Fast programming – Write to buffer and program capability (8 double words) • Optimized for FDI drivers


    Original     		PDF M58BW16F, M58BW32F M58BW32F M58BW16F 09005aef8457ee46 16-32f M58BW16FB M58BW32FT M58BW32FB V/B/512

    Q002

    Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 56MHZ M58BW016
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80 56MHZ M58BW016