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    Panasonic Electronic Components MA2SD1900L

    DIODE SCHOT 20V 200MA SSMINI2-F1
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    Panasonic Electronic Components MA2SD190GL

    DIODE SCHOT 20V 200MA SSMINI2-F4
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    MA2SD19 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA2SD19 Panasonic Silicon epitaxial planar type Original PDF
    MA2SD19 Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA2SD1900L Panasonic Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 0.2A SSMINI2 Original PDF
    MA2SD190GL Panasonic Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 0.2A SSMINI2 Original PDF

    MA2SD19 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 (0.60) 0.80±0.05 0.01±0.01 5° (0.60) IF(AV) = 200 mA rectification is possible


    Original     		PDF MA2SD19

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 0.01±0.01 5˚


    Original     		PDF 2002/95/EC) MA2SD19

    Untitled

    Abstract: No abstract text available
    Text: MA2SD19 Silicon epitaxial planar type For super-high speed switching circuit Unit: mm • Features 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 • SS-Mini type package contained two elements, allowing a rectification of IF = 200 mA • Low forward voltage: VF < 0.47 V at IF = 200 mA


    Original     		PDF MA2SD19 N-50BU PG-10N) SAS-8130)

    MA2SD19

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 (0.60) 0.80±0.05 0.01±0.01 5° (0.60) IF(AV) = 200 mA rectification is possible


    Original     		PDF MA2SD19 MA2SD19

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD190G Silicon epitaxial planar type For super high speed switching • Features M Di ain sc te on na tin nc ue e/ d ■ Package • Forward current (Average) IF(AV) = 200 mA rectification is possible


    Original     		PDF 2002/95/EC) MA2SD190G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD190G Silicon epitaxial planar type For super high speed switching • Features ■ Package • Forward current (Average) IF(AV) = 200 mA rectification is possible


    Original     		PDF 2002/95/EC) MA2SD190G

    MA2SD190G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD190G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching • Features ■ Package • Forward current (Average) IF(AV) = 200 mA rectification is possible


    Original     		PDF 2002/95/EC) MA2SD190G MA2SD190G

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 (0.60) 0.80±0.05 0.01±0.01 5° (0.60) IF(AV) = 200 mA rectification is possible


    Original     		PDF MA2SD19 PG-10N) SAS-8130)

    MA2SD190G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD190G Silicon epitaxial planar type For super high speed switching • Features ■ Package • Forward current (Average) IF(AV) = 200 mA rectification is possible


    Original     		PDF 2002/95/EC) MA2SD190G MA2SD190G

    MA2SD19

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 0.01±0.01 5˚ (0.60) (0.60) 0.80±0.05 (0.80) • Forward current (Average) IF(AV) = 200 mA rectification is possible


    Original     		PDF MA2SD19 MA2SD19

    MA2SD19

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 0.01±0.01 5˚


    Original     		PDF 2002/95/EC) MA2SD19 MA2SD19

    MA2SD19

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.80+0.05 –0.03


    Original     		PDF 2002/95/EC) MA2SD19 MA2SD19

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 0.01±0.01 5˚ (0.60) (0.80) 1.20+0.05


    Original     		PDF 2002/95/EC) MA2SD19

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    S-Mini

    Abstract: SSMini s-mini 2-pin package
    Text: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes


    Original     		PDF MA2Q705) S-Mini SSMini s-mini 2-pin package

    MA7D52

    Abstract: No abstract text available
    Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)


    Original     		PDF MA2C700 MA2C700A MA2C719 MA2C723 MA2D749 MA2D749A MA2D750 MA2D755 MA2D760 MA2H735 MA7D52

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    k11 zener diode

    Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
    Text: Diodes Switching Diodes. K2 Switching Diodes . K2


    Original     		PDF MA24D56 MA24D58 MA24D70 MA24D74 MA3D749 MA3D749A MA3D750 MA3D750A MA3D752 MA3D752A k11 zener diode zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    MA716

    Abstract: MA7D50 ma741 MA10799
    Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742


    Original     		PDF MA10700) MA10701) MA10702) MA10703) MA10704) MA10705) MA10798) MA10799) MA4S713) MA6S718) MA716 MA7D50 ma741 MA10799

    Untitled

    Abstract: No abstract text available
    Text: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3


    Original     		PDF MA2D760 MA3D761 MA2D755 MA3D756 MA3D760 MA3U760 MA3D752 MA3D752A MA3D755 MA3U755

    zener diode SMD marking code 27 4F

    Abstract: smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxx Series Silicon planar type 0.60±0.05 0.20±0.05 Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.12+0.05 –0.02 2 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) zener diode SMD marking code 27 4F smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1