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    MA4TD1110 Search Results

    MA4TD1110 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA4TD1110 M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Original PDF
    MA4TD1110T M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Silicon Bipolar MMIC Cascadable Amplifier MA4TD1110 V2.00 Gold-Ceramic Microstrip Package Outline1,2 Features ● ● ● ● ● ● ● High Dynamic Range Cascadable 50Ω/75Ω Gain Block 3dB Bandwidth: 50 MHz to 1.3 GHz 17.0 dBm Typical P1dB @ 1.0 GHz


    Original     		PDF MA4TD1110 MA4TD1110

    MP4TD1110

    Abstract: Gain Block diode gp 421 silicon bipolar transistor rf power amplifier MA4TD1110 MA4TD1110T
    Text: M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier MP4TD1110 Features • High Dynamic Range Cascadable 50Ω/75Ω Gain Block • 3dB Bandwidth: 50 MHz to 1.3 GHz • 17.0 dBm Typical P1dB @ 1.0 GHz • 12 dB Typical Gain @ 0.5 GHz • 3.8 dB Typical Noise Figure @ 1.0 GHz


    Original     		PDF MP4TD1110 MP4TD1110 Gain Block diode gp 421 silicon bipolar transistor rf power amplifier MA4TD1110 MA4TD1110T

    CT 1061 C 40

    Abstract: a4td1 1110 mmic
    Text: M aann A M P ic o m p a n y Silicon Bipolar MMIC Cascadable Amplifier MA4TD1110 V2.00 Features • • • • • • • Gold-Ceram ic Microstrip Package Outline1: High Dynamic Range Cascadable 50£2/75£2 Gain Block 3dB Bandwidth: 50 MHz to 1.3 GHz 17.0 dBm Typical PldB @ 1.0 GHz


    OCR Scan     		PDF MA4TD1110 MA4TD1110 CT 1061 C 40 a4td1 1110 mmic