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    MA4TD1110T Search Results

    MA4TD1110T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA4TD1110T M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Original PDF

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    MP4TD1110

    Abstract: Gain Block diode gp 421 silicon bipolar transistor rf power amplifier MA4TD1110 MA4TD1110T
    Text: M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier MP4TD1110 Features • High Dynamic Range Cascadable 50Ω/75Ω Gain Block • 3dB Bandwidth: 50 MHz to 1.3 GHz • 17.0 dBm Typical P1dB @ 1.0 GHz • 12 dB Typical Gain @ 0.5 GHz • 3.8 dB Typical Noise Figure @ 1.0 GHz


    Original     		PDF MP4TD1110 MP4TD1110 Gain Block diode gp 421 silicon bipolar transistor rf power amplifier MA4TD1110 MA4TD1110T