cFeon EN29
Abstract: cfeon en29lv320ab cFeon EN29LV320A cFeon EN eon en29
Text: EN29LV320A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV320A
cFeon EN29
cfeon en29lv320ab
cFeon
EN29LV320A
cFeon EN
eon en29
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Untitled
Abstract: No abstract text available
Text: EN29PL064 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29PL064
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cFeon
Abstract: EN29PL064 3FE00 cFeon EN SA10 SA11 SA12 SA13 SA14 sa15-s
Text: EN29PL064 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29PL064
EN29PL032
cFeon
EN29PL064
3FE00
cFeon EN
SA10
SA11
SA12
SA13
SA14
sa15-s
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EN29PL032
Abstract: SA16 cFeon Flash chip
Text: EN29PL032 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29PL032
EN29PL064
EN29PL032
SA16
cFeon Flash chip
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Untitled
Abstract: No abstract text available
Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV640T/B
00B5h
00C5h
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cFeon EN
Abstract: cFeon sg32 diode EN29LV640B 7400 4p toggle switch 555 data sheet cFeon EN29LV640B cFeon F data sheet 555
Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV640T/B
cFeon EN
cFeon
sg32 diode
EN29LV640B
7400
4p toggle switch
555 data sheet
cFeon EN29LV640B
cFeon F
data sheet 555
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Untitled
Abstract: No abstract text available
Text: EN29PL064/032 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29PL064/032
PL064
PL032
48-Ball
56-Ball
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cFeon
Abstract: cFeon F cFeon EN29LV640B cFeon EN29lv640 A0-A21 EN29LV640b cfeon flash 72-SA
Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV640T/B
cFeon
cFeon F
cFeon EN29LV640B
cFeon EN29lv640
A0-A21
EN29LV640b
cfeon flash
72-SA
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JESD22-A115
Abstract: No abstract text available
Text: LF PA K PSMN1R7-25YLC N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
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PSMN1R7-25YLC
JESD22-A115
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FW723
Abstract: DS-7 marking E5 TRS.150 MT28F320A18
Text: 2 MEG x 16 1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F320A18 Low Voltage, Extended Temperature 0.15µm Process Technology FEATURES Ball Assignment 47-Ball FBGA • 32Mb block architecture Seventy-one erasable blocks: Eight 4K-word parameter blocks
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MT28F320A18
47-Ball
32K-word
MT28F320A18
FW723
DS-7
marking E5
TRS.150
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sr43
Abstract: FF-47 TRS.150 CMOS linear array marking E5 transistor substitution chart MT28F320A18
Text: PRELIMINARY‡ 2 MEG x 16 1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F320A18A Low Voltage, Extended Temperature 0.12µm Process Technology Features Figure 1: 47-Ball FBGA • 32Mb block architecture Seventy-one erasable blocks: Eight 4K-word parameter blocks
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MT28F320A18A
47-Ball
32K-word
MT28F320A18
sr43
FF-47
TRS.150
CMOS linear array
marking E5
transistor substitution chart
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sample code read and write flash memory
Abstract: MARKING flash 28F MT28F320A18
Text: PRELIMINARY‡ 2 MEG x 16 1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F320A18 Low Voltage, Extended Temperature 0.15µm Process Technology FEATURES Ball Assignment 48-Ball FBGA • 32Mb block architecture Seventy-one erasable blocks: Eight 4K-word parameter blocks
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MT28F320A18
48-Ball
32K-word
MT28F320A18
sample code read and write flash memory
MARKING flash 28F
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Untitled
Abstract: No abstract text available
Text: 2 MEG x 16 1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F320A18 Low Voltage, Extended Temperature 0.15µm Process Technology FEATURES Ball Assignment 47-Ball FBGA 32Mb block architecture • Seventy-one erasable blocks: • Eight 4K-word parameter blocks
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MT28F320A18
47-Ball
32K-word
MT28F320A18
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MT28F320A18
Abstract: No abstract text available
Text: 2 MEG x 16 1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F320A18 Low Voltage, Extended Temperature 0.15µm Process Technology FEATURES Ball Assignment 47-Ball FBGA 32Mb block architecture • Seventy-one erasable blocks: • Eight 4K-word parameter blocks
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MT28F320A18
47-Ball
32K-word
MT28F320A18
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Untitled
Abstract: No abstract text available
Text: s TAIWAN SEMICONDUCTOR SR 102 - S R 115 1.0 AMP. Schottky Barrier Rectifiers DO-41 RoHS COMPLIANCE 4 T 7 *. Features 40 4• - «■ .1C7 2.7j .000 ¡2.01 DUV Low p ow er loss, high efficiency. High current capability, Low VF. High re lia bility High surge current ca p a b ility.
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DO-41
DO-41
SR102
SR115)
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101G
Abstract: 105G 106G DBLS101G DBLS107G DBLS-104G 98-Q
Text: TAIWAN f f i SEMICONDUCTOR DBLS101G - DBLS107G Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers RoHS DBLS COMPLIANCE Features > 4- UL R ecognized File # E -326243 Glass passivated junction Ideal for printed circuit board ^ Reliable low cost construction utilizing molded
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DBLS101G
DBLS107G
E-326243
MIL-STD-202,
25flC
50mVD-D
101G
105G
106G
DBLS-104G
98-Q
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Untitled
Abstract: No abstract text available
Text: 1?£8£I0PS 'ON 0NIMVHQ PIN INSERT T H E S E M A R K I N G S L E T T E R S IN DRAWING SHOW S O C K E T I N S E R T . FOR P I N I N S E R T MARK A S FOLLOWS._ SOCKET POF-O-212P(98. 02 ? V P IN I NSERT v h — h r- INSERT S P E C I F I C A T I ON
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POF-O-212P
2000Vr.
5000M
75mm2X
25mm2X
5000MQ
T74-1
QE4501
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tef 6621
Abstract: ABOTT LRS1380
Text: LRS1380 Stacked Chip 32M x16 Flash and 4M (x16) SRAM ( Model No. : LRS1380) Spec No. : EL13 7 0 04 Issue Dat e: Jul y 5, 2001 SHARP LRS1380 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission
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LRS1380
LRS1380)
EL137004
LRS1380
a-5819
tef 6621
ABOTT
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Untitled
Abstract: No abstract text available
Text: 7/ STPR241 OCT STPR2420 CT SGS-THOMSON ra«M S»iD(S ULTRA FAST RECOVERY RECTIFIER DIODES A 1 -N-K CVJ < . SUITED FOR SMPS • LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME . HIGH SURGE CURRENT CAPABILiTY ■ HIGH AVALANCHE ENERGY CAPABILITY
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STPR241
STPR2420
T0220AB,
115PC
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BA153G
Abstract: BA157G marking DLA marking L2 Taiwan semiconductor BA159G
Text: s TAIWAN SEMICONDUCTOR B A 157G - B A 159G 1.0 AMP. Glass Passivated Fast Recovery Rectifiers tò R oHS COM PLIANCE Q-QA1 - 2 3 - •1C7 12.7 ! .OSO 12.0 ! DIA. I.JiZTvtl M IN . Features <v ^ <- <■ <■ G lass pass ivatcd ch i p ju nction. High efficiency, Low VF
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BA157G
BA159G
DO-41
MIL-STD-202,
95-iiir)
BA153G
marking DLA
marking L2 Taiwan semiconductor
BA159G
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2715 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS n r WÊF 7 7 m i m s wmr HIGH FREQUENCY AM PLIFIER APPLICATIONS. U n it in mm + CL5 2.5-CI3 + 0 .2 5 1.5 - a i 5 FEA TU RES : H igh Pow er G ain • t— EE- : Gpe = 2dB (Typ.) (f= 10.7M H z)
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2SC2715
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Untitled
Abstract: No abstract text available
Text: STTH120L06TV Turbo 2 ultrafast high voltage rectifier Features and benefits • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces switching and conduction losses Description The STTH120L06TV, which is using ST Turbo 2 600 V technology, is specially suited for use in
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STTH120L06TV
STTH120L06TV,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY COM’L: -7/10/12/15 IND: -10/12/15/20 The MACH5-512/MACH5LV-512 AMD£I M A C H 5 -5 1 2 /1 2 0 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 6 0 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 8 4 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 9 2 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /
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MACH5-512/MACH5LV-512
5LV-512
CH5LV-512
MACH5-512/XXX-7/10/12/15
MACH5LV-512/XXX-7/10/12/15/20
BGD352
352-Pin
16-038-BGD352-1
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2n2907 TO-92
Abstract: BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337
Text: Process National Semiconductor 3 S o -(pS 2_ 63 PNP M edium Row ^ 12. ( 2 13 2 1 Uj- D ESC R IPT IO N 3.020 Process 63 is a non-overlay, double-diffused, si I epitaxial device. Complement to Process 19. A PPLIC A T IO N This device was designed for use as general pure
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2N2905
2N2907
2N4403
2N3702
O-237:
TN2905
T0-237
2N3416
T0-92
2N3417
2n2907 TO-92
BC337 hie hre hfe
bc337 hie
c237a
C714B
BC337 hoe
2N3702 NATIONAL SEMICONDUCTOR
C2371
C2379
hie for bc337
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