247Q
Abstract: PALC16R6-25WC carrier 40QMB CERAMIC LEADLESS CHIP CARRIER PALC16R4-35WC 16L8 16R4 16R6 16R8 PALC20
Text: PAL C20 Series CYPRESS Features • • CMOS EPROM technology for repro grammability • High performance at quarter power Reprogrammable CMOS PALC 16L8,16R8, 16R6, 16R4 High reliability — Proven EPROM technology — > 1500V input protection from electrostatic discharge
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PALC20
PALC16R8-35WC/WC
20-Lead
300-Mil)
PALC16R8â
40DMB
PALC16R8-40LMB
20-Pin
247Q
PALC16R6-25WC
carrier 40QMB
CERAMIC LEADLESS CHIP CARRIER
PALC16R4-35WC
16L8
16R4
16R6
16R8
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AM25LS2519
Abstract: No abstract text available
Text: Am25LS2519 \ Am 25LS2519 Quad Register with Two Independently Controlled Three-State Outputs DISTINCTIVE CHARACTERISTICS • • • • Buffered com m on asynchronous clear S e p arate buffered com m on output enable for each set of outputs Tw o sets o f fully buffered three-state outputs
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Am25LS2519
03660B
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Untitled
Abstract: No abstract text available
Text: 2SK3444 T O S H IB A TOSHIBA FSELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE { *-M Q S V 2S K3444 TENTATIVE IN D U S T R IA L HIGH SPEGO SWITCHING APPLICATIONS A P P L IC A T IO N S _UNIT : rrm CHOPPER REGULATION DC-DC CONVERTER AND MOTOR DRIVE APPLICATI OHS
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2SK3444
K3444
25flC
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Untitled
Abstract: No abstract text available
Text: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS E L 2072C 730 MHz Closed Loop Buffer F eatu res G eneral D escrip tion • 730 M Hz - 3 dB bandwidth 0.5 Vpp • 5 ns settling to 0.2% • Vs = ±5V @ 15 mA • Low distortion: HD2, HD3 of —65 dBc at 20 M Hz
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CLC110
EL2072C
EL2072
EL2072,
312T557
DQD32GÃ
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Untitled
Abstract: No abstract text available
Text: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)
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300-mil
CY7C271A
CY7C271A
768-word
7C271A
S50Tbb2
GG1530Q
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RT3062
Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
RT3062
BLY98
2SC931
1768-0815
2SC1002
2SC1003
2SC807
2SC830
ta6200
2SC685
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B1151 Y
Abstract: b1151 -y MP2138 MP2143 2SB228 MP2139 2SB251 B1151 2SB250 2N391
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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NPN110.
MP2139A
MP2140
MP2140A
MP2141
MP2141A
MP2142
MP2142A
MP2143
B1151 Y
b1151 -y
MP2138
2SB228
MP2139
2SB251
B1151
2SB250
2N391
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mb8417
Abstract: tc5516 MB8417A-12 MB8417A-12L MB8417A-15 MB8417A-15L
Text: FUJITSU MOS Memories • M B 8 4 1 7 A - 1 2 , M B 8 4 1 7 A - 1 2 L , M B 8 4 1 7 A - 1 5 , M B 8 4 1 7 A - 1 5 L CMOS 16,384-Bit Static Random Access Memory Description The F u jits u M B8417A is a 2048-w ord by 8 -b it s ta tic ra n d o m a c ce s s m e m o ry fa b ric a te d w ith C M O S s itic o n g a te pro c e s s . The
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MB8417A-12,
MB8417A-12L,
MB8417A-15,
MB8417A-15L
384-Bit
MBB417A
2048-word
MB8417A
24-Laad
DIP-24C-C03
mb8417
tc5516
MB8417A-12
MB8417A-12L
MB8417A-15
MB8417A-15L
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CY7C344-25HC
Abstract: 74HC 7C344 C344 CY7C344 000713t Signal path designer IND20 MU2030 AC02X
Text: 4bE D SEMI CONDUCTOR D 2Sö^bb2 DD07132 ? Q C Y P ‘T ' & ' M - O l W s CYPRESS SEMICONDUCTOR CY7C344 32-Macrocell MAX EPLD Features Functional Description • High-performance, high-density re placement for TTL, 74HC, and custom logic • 32 macroceils, 64 expander product
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QD07132
CY7C344
32-Macrocell
28-pin
300-mil
MACROCELL10
MACROCELL12
MACROCELL16
CY7C344-25HC
74HC
7C344
C344
000713t
Signal path designer
IND20
MU2030
AC02X
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LA4430
Abstract: RJFT MC 50AB
Text: LA4430 Nac3ó3c H it D254 4.5W 'Sx V 'Xd'? \jo.C363B ¿ / / ti it ti 4 , 5»V typ 50dB» flsar.^ X ’ * * • * -f -y *-tftA03 ■ ssm ^/ì "/ *r — / / / / ï J 4 '> a • S Ë P m ~ ^ r ^ r j t : V « & ¿>*10. . / / fc W *} U <T)X / / -Ü ",* h h re í í & / / :
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LA4430
C363B
-20--aC
100iW.
018A-SI0PIG
SEP10F
rjiai80
D254YOiTK
/52l9YO
/0187YOct3BTL
RJFT
MC 50AB
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transistor 2Sc 2053
Abstract: No abstract text available
Text: •'aMFrTrS-tfoâé! +3.3 V, +5 V, Adjustable Micropower Linear Voltage Regulators ANÀLOG D EV IC ES FEATURES Tri-Mode Operation '7: ; 3.3 V, 5 V Fixed or +1.3 V to +lë V Adjustable Low Power CMOS: 9 |iA max Quiescent Current High Current 100 mA Output '
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ADM663/ADM666
ADM666A
63A/ADM
transistor 2Sc 2053
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IC 74164
Abstract: 74164 with ic PIN DIAGRAM pin diagram of ic 74164 ic 74ls164 AND SPECIFICATIONS 74164 truth table and pin diagram of IC 74164 LS164 74164 shift register IC 74164 14 PIN DIAGRAM IC 74164 PIN DIAGRAM
Text: 74164, L S I6 4 Shift Registers Signetics 8-Bit Serial-ln Parallel-Out Shift Register Product Specification Logic Products FEATURES • • • • Gated serial Data inputs Typical shift frequency of 36MHz Asynchronous Master Reset Fully buffered Clock and Data
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36MHz
74LS164
36MHz
1N916,
1N3064,
500ns
500ns
IC 74164
74164 with ic PIN DIAGRAM
pin diagram of ic 74164
ic 74ls164 AND SPECIFICATIONS
74164 truth table
and pin diagram of IC 74164
LS164
74164 shift register IC
74164 14 PIN DIAGRAM
IC 74164 PIN DIAGRAM
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c258
Abstract: CERAMIC LEADLESS CHIP CARRIER h67 YW PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC
Text: CY7C258 CY7C259 CYPRESS 2Kx 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation T h e CY7C258 and CY7C259 a re 2K x 16 C M O S P R O M s specifically designed for use in state m achine applications. — tc p — 10 ns
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CY7C258
CY7C259
100-MHz
11-bit-wide
CY7C259)
28-pin,
300-mil
CY7C259
44-pin
c258
CERAMIC LEADLESS CHIP CARRIER
h67 YW
PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC
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Untitled
Abstract: No abstract text available
Text: [ Ordering num ber : EN *4852B CMOS 1C LC89512W IS A 0 Y O CD-ROM Error Correction LSI with Built-In SCSI Interface I Preliminary Overview Package Dimensions T he L C 89512W integrates a real-tim e e rro r co rrectio n unit: mm circuit and a SCSI interface in a single chip.
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4852B
LC89512W
9512W
LC89512W]
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Untitled
Abstract: No abstract text available
Text: CYPRESS UltraLogic 64-Macrocell Flash CPLD Device CPLD and is p art of the F lash37<M™ family of high-density, high speed CPLDs. Like all members of the F lash37(M family, the CY7C372i is de signed to bring the ease of use and high performance of the 22V10, as well as PCI
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64-Macrocell
lash37
CY7C372i
22V10,
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84-PIN
Abstract: CY7C341 CY7C341B
Text: CY7C341B ir CYPRESS . Features • 192 macrocells in 12 LABs • 8 dedicated inputs, 64 bidirectional I/O pin • Advanced 0.65-micron CMOS technology to increase performance • Programmable interconnect array • 384 expander product terms • Available in 84-pin HLCC, PLCC, and
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CY7C341B
192-Macrocell
65-micron
84-pin
CY7C341Bis
CY7C341Bâ
35JC/JI
84-Lead
CY7C34
CY7C341
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PCA84C841
Abstract: PCF84C00 Philips IC14 MLB999 vp05 MC0172 84C640 MCD182 PCA84C644 84C441
Text: IN TE G R A TE D C IR C U ITS 84C44X; 84C64X; 84C84X 8-bit microcontrollers with O SD and V S T Product specification Supersedes data of November 1991 File under Integrated Circuits, IC14 October 1994 Philips Semiconductors PHILIPS PHILIPS 711002b OQfl 447b
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84C44X;
84C64X;
84C84X
711002b
000447b
PCF84CXXXA
PCA84C640
PCA84C841
PCF84C00
Philips IC14
MLB999
vp05
MC0172
84C640
MCD182
PCA84C644
84C441
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zener 4b7
Abstract: No abstract text available
Text: EL2041/EL2041C SflE D • 312=1557 □□□2110 fill H E L A ELANTEC INC F eatu res G eneral D escrip tion • Open loop unity bandwidth—90 MHz • Unity gain stable • High gain—10k typ. • High slew rate—250 V/ju.s • Low offset voltage—0.5 mV typ.,
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EL2041/EL2041C
MIL-STD-883
HA2541
EL2041CG
864E-18
312SS57
00DS122
EL2041/EL2041C
EL2041
zener 4b7
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T-79-CX
Abstract: LM308AM power 22E LM308AJ power 22E analog RETS108AX
Text: LM108A/LM208A/LM308A NATL SEfllCOND L IN E A R SHE D • hS0H2H Q0b0270 T National Semiconductor LM108A/LM208A/LM308A Operational Amplifiers General Description introducing less error than devices like the 709 with 10 kn sources, integrators with drifts less than 500 jxV/sec and
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Q0bas70
T-79-CX,
LM108A/LM208A/LM308A
LM108/LM108A
T-79-06-10
TL/H/77S8-7
TUW7759-8
LM108AH,
LM208AH
T-79-CX
LM308AM
power 22E
LM308AJ
power 22E analog
RETS108AX
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R 12E D F I b3b?254 O O flS'm 7 | M A X IM U M R AT IN G S Symbol Value Unit VcES 30 Vdc Collector-Base Voltage Vc b o 30 Vdc Emitter-Base Voltage Ve s o 10 Vdc ic 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C R»j a 556 °C/W PD 300 mW 2.4
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MMBTA63L
MMBTA64L
OT-23
O-236AB)
25flC
MMBTA64L
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RFJ-2
Abstract: Opto P 721
Text: MOTOROLA SC DIODES/OPTO 3*1E D D b3b?2S5 0055^07 fl IMOT? N O T R E C O M M E N D E D FO R N EW D E S IG N S T - 3*7-21 MU10 PINI Unijunction Transistors S ilic o n A n n u lar Unijunction T ran sistors . .d e sign e d for econom ical, general purpose use in pulse, timing, oscillator and
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lm607
Abstract: LM607CN LM607ACN LM607ACH LM607CH LM607AMH LM607B LM607A LM607AM LM607/LM607A/LM607B
Text: LM607/LM607A/LM607B National Semiconductor LM607/LM607A/LM607B Precision Operational Amplifier General Description Features The LM607 series of precision operational amplifiers are trimmed at wafer sort to extremely low values of offset volt age. Advanced circuit design and testing techniques allow
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LM607/LM607A/LM607B
LM607/LM607A/LM607B
LM607
TL/H/87B7-8
LM607CN
LM607ACN
LM607ACH
LM607CH
LM607AMH
LM607B
LM607A
LM607AM
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Untitled
Abstract: No abstract text available
Text: /UHOU. i I/ o u / a u CY7C460 CY7C462 CY7C464 Revision: August 17,1994 F# CYPRESS Cascadable 8K x 9 FIFO Cascadable 16K x9F IF O Cascadable 32K x9F IF O Features Functional Description • 8K x 9 ,16K x 9 ,32K x 9 FIFO buffer memory • Asynchronous read/write
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CY7C460
CY7C462
CY7C464
600-mil
EDT7205
IDT7206
CY7C460
25fiTbb2
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RM4136
Abstract: RC4136N RC4136 RC4136D RM4136FK RV4136 RV4136D RV4136J RV4136N FK800
Text: TEXAS INSTR LIN /IN TFC lflE D • flU17a4 0077S44 T RM4136, RV4136, RC4136 QUAD HIGH-PERFORMANCE OPERATIONAL AMPLIFIERS T -1 9 '0$~ HO NOTICE , S E E ORDER OF DATA FOR ER RA TA _ D2148, MARCH 1978-REVISED NOVEMBER 1988 IN FO RM ATIO N RM4136 . . . J OR W PACKAGE
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0CI77544
RM4136,
RV4136,
RC4136
RC4136
RM4136
RC4136N
RC4136D
RM4136FK
RV4136
RV4136D
RV4136J
RV4136N
FK800
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