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    TC5516 Price and Stock

    Toshiba Corporation TC551664BJ-12

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    Bristol Electronics TC551664BJ-12 5,964
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    Toshiba America Electronic Components TC5516ADL

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    Bristol Electronics TC5516ADL 432
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    Toshiba America Electronic Components TC551664BFT-12

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    Bristol Electronics TC551664BFT-12 240
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    Component Electronics, Inc TC551664BFT-12 770
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    Toshiba America Electronic Components TC551664BJ-15

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    Bristol Electronics TC551664BJ-15 197 1
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    Quest Components TC551664BJ-15 2,392
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    TC551664BJ-15 48
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    TC551664BJ-15 2
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    Component Electronics, Inc TC551664BJ-15 48
    • 1 $9.23
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    Toshiba America Electronic Components TC551664J-15

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    Bristol Electronics TC551664J-15 162 1
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    Quest Components TC551664J-15 1,054
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    TC551664J-15 76
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    TC551664J-15 53
    • 1 $20.0925
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    TC551664J-15 37
    • 1 $15
    • 10 $11.25
    • 100 $9.75
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    Find more TC5516 price and stock on Findchips.com

    TC5516 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC5516 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TC5516 Toshiba Scan PDF
    TC551664 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664AJ Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664AJ-15 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664AJ-20 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664BFT-10 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BFT-10 Toshiba Scan PDF
    TC551664BFT-12 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BFT-12 Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Commercial, TSOP II, 44-Pin Scan PDF
    TC551664BFT-12 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664BFT-12(EL) Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Commercial, TSOP II, 44-Pin, Tape And Reel Scan PDF
    TC551664BFT-15 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BFT-15 Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Commercial, TSOP II, 44-Pin Scan PDF
    TC551664BFT-15 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664BFTI-12 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BFTI-12 Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Industrial, TSOP II, 44-Pin Scan PDF
    TC551664BFTI-15 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BFTI-15 Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Industrial, TSOP II, 44-Pin Scan PDF
    TC551664BJ Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF

    TC5516 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TC551664AJ-20 1/2 IL08 * C-MOS 1M(65,536X16)-BIT STATIC RAM -TOP VIEW- A4 1 44 A5 A3 2 43 A6 A2 3 42 A7 A1 4 41 OE A0 5 4 3 2 1 44 40 UB CE 6 43 42 39 LB I/O1 7 27 38 I/O16 I/O2 8 37 I/O15 I/O3 9 36 I/O14 I/O4 10 35 I/O13 11 VDD(+5V) 12 GND I/O5 13


    Original     		TC551664AJ-20 536X16 I/O16 I/O14 I/O15 I/O13 I/O10 I/O11 PDF

    TC551664AJ-15

    Abstract: TC551664AJ
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551664AJ-15/20 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high


    Original     		TC551664AJ-15/20 TC551664AJ SR01030895 SOJ44-P-400) TC551664AJ-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC551664BJ/BFT-12,-15 TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0 PDF

    TC551664J

    Abstract: No abstract text available
    Text: TOSHIBA TC551664J-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664J is a 1.048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan     		TC551664J-15/20/25 TC551664J 400mil DD2b417 B-127 PDF

    tc551664aj-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 tc551664aj-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ PDF

    TC551664J-15

    Abstract: cs40
    Text: TOSHIBA TC551664J-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The T C 5 M 6 6 4 J is a 1.048.576 bit high speed C M O S static random acce ss m em ory organized as 6 5 ,5 3 6 w o rd s by 16 bits and operated trorn a single 5V supply. Toshiba's advanced C M O S tech nolog y and circuit design enable high speed operation.


    OCR Scan     		TC551664J-15/20/25 1664J B-127 TC551664J-15 cs40 PDF

    TC551632J-25

    Abstract: TC551632
    Text: 51632J —20. TC 551632J—25. TC 32,768 W O R D x 16 BIT CMOS STATIC RAM PRELIMINARY DESCRIPTION The TC551632J is a 524,288 bits high speed static random access memory organized as 32,768 words by 16 bits using CMOS technology, and operated from a single 5-volt supply.


    OCR Scan     		51632J 551632J--25. TC551632J C-103 TC551632J--20, TC551632J-25, TC551632J-35 TC551632J-25 TC551632 PDF

    SOJ44-P-400-1

    Abstract: TC551664BJ
    Text: TOSHIBA TC551664BJ/BFT-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664BJ/BFT-10 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 W0-13tM SOJ44-P-400-1 TC551664BJ PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551664AJ-15,-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664AJ-15 536-WORD 16-BIT TC551664AJ 576-bit SOJ44-P-400-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan     		TC551664 BJ/BFT-15 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TENTATIVE TC551664BJI/BFT1-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJI/BFTI is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		TC551664BJI/BFT1-12 536-WORD 16-BIT TC551664BJI/BFTI 576-bit TC551664BJ1/BFTI-12 SOJ44-P-400-1 TC551664BJI/BFTI-12 TSOPII44-P-400 PDF

    SOJ44-P-400-1

    Abstract: TC551664AJ TC551664AJ-15 TC551664AJ-20 00151341
    Text: TO SHIBA TC551664AJ-15,-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664AJ-15 536-WORD 16-BIT TC551664AJ 576-bit SOJ44-P-4QO-1 SOJ44-P-400-1 TC551664AJ-20 00151341 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551664AJ-15/20 SILICON GATE CMOS Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide


    OCR Scan     		TC551664AJ-15/20 TC551664AJ 44-pin PDF

    T8E6

    Abstract: TC551632 TC551632J acc20
    Text: TOSHIBA T C 5 5 1 6 3 2 .1 -2 0 / 2 5 / 3 5 SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS STATIC RAM Description The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan     		TC551632J B-101 T8E6 TC551632 acc20 PDF

    tc551664j

    Abstract: TC551664J-15
    Text: SILICON GATE CMOS DIGITAL INTEGRATED CIRCUIT TC551664J-15.-20.-25 65,536 W O RD x 16 BIT CMOS STATIC RAM DESCRIPTION The TC551664J is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's CMOS


    OCR Scan     		TC551664J-15 TC551664J TC551664551664J-15 PDF

    TC551664AJ-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TO SHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit 44-P-400-0 TC551664AJ-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ PDF

    TC55B4257

    Abstract: TC551664J-20
    Text: X6 Capacity 288KBit Type No. Organization 15 15 TC55329AP/AJ-20 20 20 TC55329AP/AJ-25 25 25 TC56329AP/AJ-35 32,768 x 9 35 35 TC55B329P/J-10 10 10 TC55B329P/J-12 12 12 TC55B329P/J-15 15 15 20 20 25 25 TC551632J-36 35 35 TC5SB4256J-12 12 12 TC55B4256J-15 15


    OCR Scan     		TC55329AP/AJ-15 TC55329AP/AJ-20 TC55329AP/AJ-25 288KBit TC56329AP/AJ-35 TC55B329P/J-10 TC55B329P/J-12 TC55B329P/J-15 TC551632J-20 512KBit TC55B4257 TC551664J-20 PDF

    toshiba tc55

    Abstract: TC5516AP TC5516APL tis apl eprom 2716 TC55 TC551
    Text: TOSHIBA MOS MEMORY PRODUCTS 2 ,0 4 8 W O R D X TC5516AP/-2, TC5516APL/-2 TC5516AF/-2, TC5516AFL/-2 8 BIT C M O S STATIC RAM SILICON GATE C M O S DESCRIPTION The T C 5 5 1 6 A P ./A F is a 1 6 3 8 4 - b it s ta tic ra n d o m a cce ss m e m o ry o rg a n iz e d as 2 0 4 8 w o rd s by 8 b it


    OCR Scan     		TC5516AP/-2, TC5516APL/-2 TC5516AF/-2, TC5516AFL/-2 TC551 6384-bit TC5516APL/AFL TC5516AP/AF 60idth toshiba tc55 TC5516AP TC5516APL tis apl eprom 2716 TC55 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC551664AJ-15,-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664AJ-15 536-WORD 16-BIT TC551664AJ 576-bit SOJ44-P-400-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 'SC INTEGRATED CIRCUIT T O S H IB A T O S H IB A M O S D IGITAL IN T E G R A T E D CIRCUIT TC 551664J - 15, TC551664J - 20. T C 5 5 1 6 6 4 J - 2 5 TECHNICAL D A T A SILICON G A T E C M O S PRELIM INARY 65,536 W O R D x 16 BIT C M O S STATIC RAM DESCRIPTION


    OCR Scan     		551664J TC551664J TC55166AJ SOJ44â PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551664AJ-15/20 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high


    OCR Scan     		TC551664AJ-15/20 TC551664AJ SR01030895 GD26D7S SOJ44-P-400) t1724fl PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC551664BJI/B FTl-12,-15 T O S H IB A M O S D IG ITAL IN TEG RATED CIRCUIT T E N T A T IV E SILICON G ATE C M O S 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJI/BFTI is a 1,048,576-bit high-speed static random access memory SRAM organized as


    OCR Scan     		TC551664BJI/BFT1-12 536-WORD 16-BIT TC551664BJI/BFTI 576-bit SC1J44-P-400-1 44-P-400-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551632J-20/25/35 SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS STATIC RAM Description The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan     		TC551632J-20/25/35 TC551632J 400mil c0c721 B-101 PDF