capacitor 0.01 k 630 MKT
Abstract: MKT 373 EB capacitor 373 MKT length 0.068 MF CAPACITOR MKT GF500 GL-300 capacitor MKT capacitor 0.022 k 630 MKT pitch 15 capacitor 0.015 k 400 MKT
Text: MKT 373 M Mini Vishay BCcomponents DC Film Capacitor MKT Radial Potted Type l FEATURES w RoHS compliant 10 mm to 27.5 mm laed pitch Supplied loose in box, taped on ammopack or reel h ENCAPSULATION Flame retardant plastic case and epoxy resin (UL-class 94 V-0)
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18-Jul-08
capacitor 0.01 k 630 MKT
MKT 373 EB
capacitor 373 MKT length
0.068 MF CAPACITOR MKT
GF500
GL-300
capacitor MKT
capacitor 0.022 k 630 MKT pitch 15
capacitor 0.015 k 400 MKT
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Untitled
Abstract: No abstract text available
Text: Thick Film High Voltage Lead-Free Chip Resistors Standard Halogen-Free Document No. TRH-XX0S001I Revise Date 2012/07/04 page number 1/10 1. Scope : This specification applies for thick film high voltage Laed-Free chip resistors made by TA-I. Conductor Over Coat (Color : Green)
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TRH-XX0S001I
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Untitled
Abstract: No abstract text available
Text: SCS212AGHR Data Sheet SiC Schottky Barrier Diode lAEC-Q101 Qualified VR 650V IF 12A QC 18nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS212AGHR
lAEC-Q101
O-220AC
SCS212AG
R1102B
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BP317
Abstract: LAE4002S SC15
Text: DISCRETE SEMICONDUCTORS DATA SHEET LAE4002S NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LAE4002S
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LAE4002S
OT100
SCA53
127147/00/02/pp8
BP317
LAE4002S
SC15
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SOT-100
Abstract: BP317 LAE4001R SC15 transistor jc 817 sot100
Text: DISCRETE SEMICONDUCTORS DATA SHEET LAE4001R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LAE4001R
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LAE4001R
OT100
SCA53
127147/00/02/pp8
SOT-100
BP317
LAE4001R
SC15
transistor jc 817
sot100
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD 81CXXX/81NXXX VOLTAGE DETECTORS WITH BUILT-IN DELAY CMOS IC 1 1 DESCRIPTION The UTC 81CXXX and 81NXXX series are good performance voltage detector and manufactured by CMOS technologies with highly accurate, low power consumption.
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81CXXX/81NXXX
81CXXX
81NXXX
200ms,
200ms
400ms,
100ppm/â
QW-R502-039
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Voltage Detector SOT-89 marking
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 81CXXX/81NXXX CMOS IC VOLTAGE DETECTORS WITH BUILT-IN DELAY 1 1 DESCRIPTION The UTC 81CXXX and 81NXXX series are good performance voltage detector and manufactured by CMOS technologies with highly accurate, low power consumption.
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81CXXX/81NXXX
81CXXX
81NXXX
OT-89
200ms,
200ms
400ms,
100ppm/
QW-R502-039
Voltage Detector SOT-89 marking
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LD33 VOLTAGE REGULATOR
Abstract: LD33 regulator LD33 VOLTAGE REGULATOR 3.3v LD33 SOT 223 LD33 LD33 SOT223 Analog Marking Information LD50 VOLTAGE REGULATOR LD33 marking SOT223 marking ld33
Text: Packaging for Automatic Handling — Tape & Reel General Description Tape & Reel Surface mount and TO-92 devices are available in tape and reel packaging. Surface mount components are retained in an embossed carrier tape by a cover tape. TO‑92 device leads are secured
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ANSI/EIA-481-C-2003
OT-23,
SC-70,
OT-143
OT-223.
LD33 VOLTAGE REGULATOR
LD33 regulator
LD33 VOLTAGE REGULATOR 3.3v
LD33 SOT 223
LD33
LD33 SOT223
Analog Marking Information
LD50 VOLTAGE REGULATOR
LD33 marking SOT223
marking ld33
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., 81CXXX/81NXXX VOLTAGE DETECTORS WITH BUILT-IN DELAY CMOS IC 1 1 DESCRIPTION The UTC 81CXXX and 81NXXX series are good performance voltage detector and manufactured by CMOS technologies with highly accurate, low power consumption.
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81CXXX/81NXXX
81CXXX
81NXXX
200ms,
400ms
100ppm/â
QW-R502-039
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1721E50R
Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking
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LAE4001R
LAE4002S
LBE2003S
LBE2009S
LCE2009S
LEE1015T
LTE21009R
LTE21015R
LTE21025R
LTE42005S
1721E50R
Marking Codes
Philips MARKING CODE
2327E40R
marking codes transistors
transistor 502
r8 marking
marking Code philips
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hilton capacitors
Abstract: No abstract text available
Text: W E 7 TANTALUM CAPACITORS SWT SERIES DIMENSIONS AND TOLERANCE Dimension "d" - 0.020 ± 0 . 002’ 0.5±0.05mm Dimension "LL" 1.5 ±0.06" (38.1 ±1.6 mm) Tolerance on Diameter "D" - ±0.005" (±0.13 mm) Tolerance on Length “L" - ±0.015" (±0.38 mm) Part Marking Information
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siemens SFH nm
Abstract: TCA 700 y C120 GPL06724 GPL06880 SFH4290 SFH4295
Text: - A n SIEMENS Schnelle GaAIAs-IR-Lumineszenzdiode High-Speed GaAIAs Infrared Emitter SFH 4290 SFH 4295 Vorläufige Daten / Preliminary Data 3.0 CM 1 ^ CO O Q. SFH 4290 GPL06724 Collector/Cathode marking rto 00 C oD Q. SFH 4295 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GPL06724
GPL06880
Ie100mA
101s102
siemens SFH nm
TCA 700 y
C120
GPL06724
GPL06880
SFH4290
SFH4295
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EN 61210
Abstract: 61058 EN61210 400M0E3 50E3 T100 61210 MARQUARDT
Text: 35.7 ±0-6 16 ± ! 0.3 ±0.25 CD • E& l O +1 r- oo Flachstecker plug-in 1 11 1 11 - ^ CM <=> +1 i_n 6,3 x 0,8 EN 61058 / EN 61210 / DIN 46244 A-A B-B 2:1 2:1 +0.14 3 . 4 _ o j x 3I§ :^ + 0.02 NC NO AuFschri Ft Marking 1006 ji Wechsler 1-polig single pole changeover
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/400M0E3
D-7B604
EN 61210
61058
EN61210
400M0E3
50E3
T100
61210
MARQUARDT
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opel connectors
Abstract: No abstract text available
Text: 16 15 14 13 12 ii 10 9 a 5 3 2 1 K J .£=1=1 H x= zu Materiaikennzeichnung MATERIAL MARKING LIefenzustand S p a c e r In V o r r a s t s t e . 0 . 4 . 8 MM F E M A L E TERM. C O N D I T I O N BY D E LIVERY S P A C E R IN P R E L O C K E D P O S I T I O N
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Analog devices assembly code marking Information
Abstract: No abstract text available
Text: wmLEM h n PA H ECK w LAE RT DT Surface Mount RF Schottky Diodes in SOT-323 SC-70 Technical Data HSMS-280A Series HSMS-281A Series HSMS-282A Series Features • Surface Mount SOT-323 Package • Low Turn-On Voltage (As Low as 0.34 V at 1 mA) • Low FIT (Failure in Time)
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OT-323
SC-70)
HSMS-280A
HSMS-281A
HSMS-282A
OT-323
Analog devices assembly code marking Information
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IEC-134
Abstract: IEC134 transistor t4B MARKING CODE R7 RF TRANSISTOR LAE6000Q T4B marking
Text: 7^ 3 / " / ^ LAE6000Q M AINTENANC E TYPE PHILIPS INTERNATIONAL 5bE J> 711Qfi5t, D04blflQ OOT IPHIN LOW-NOISE MICROWAVE TRANSISTOR NPN transistor fo r common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optim um temperature profile,
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LAE6000Q
711005b
004blfl0
IEC134)
IEC-134
IEC134
transistor t4B
MARKING CODE R7 RF TRANSISTOR
LAE6000Q
T4B marking
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F laE D M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage Ve b o 12 Vdc 'c 500 mAdc Sym bol M ax Unit PD 225 mW 1.8 mW/°C Ro ja 556 °c/w Pd 300
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MMBT6427L
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LAE4002S FEATURES PINNING -SOT100 • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • Optimum temperature profile
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-SOT100
LAE4002S
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LAE4001R
Abstract: SC15 MGL069
Text: Philips Semiconductors Product specification NPN microwave power transistor LAE4001R FEATURES PINNING-SOT100 • S elf-aligned process e ntirely ion im planted and gold sandw ich m etallization PIN • O ptim um tem perature profile • E xcellent perform ance and reliability.
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LAE4001R
PINNING-SOT100
MBC878
OT100.
LAE4001R
SC15
MGL069
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Untitled
Abstract: No abstract text available
Text: N AMER P H IL IP S/ D IS C R ET E ObE D I« bbS3T31 DOIM'IOI T • l LAE4001R T-S\-n MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r common-emitter class-A linear power amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,
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bbS3T31
LAE4001R
bt53131
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D • 1 bbS3T31 0014^13 5 ■ LAE6000Q 7 V r-3 |-l5 T LOW-NOISE MICROWAVE TRANSISTOR N-P-N transistor for common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,
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bbS3T31
LAE6000Q
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure
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bbS3T31
0D14T07
LAE4002S
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MARKING CODE R7
Abstract: IEC134 LAE6000Q SOT-100
Text: 1I N AMER P H I L I P S / D I S C R E T E JDbE D • ^ 5 3^31 5 ■ LAE6000Q r-3 |-i5 r LOW-NOISÉ MICROWAVE TRANSISTOR N-P-N transistor fo r com m on-em itter class-A low-noise amplifiers up to 4 G H z. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optim um temperature profile,
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OT-100.
LAE6000Q
MARKING CODE R7
IEC134
LAE6000Q
SOT-100
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IEC134
Abstract: LAE4002S
Text: I-« N AMER P H IL IP S /D IS C R E T E OLE D • hbSBTBl 0014*107 T ■ LAE4002S MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter ciass-A linear power amplifiers up to 4 GHz. Diffused emitter . ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure
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LAE4002S
OT-100.
L-13-â
Zo-50n
IEC134
LAE4002S
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