Untitled
Abstract: No abstract text available
Text: WH SERIES IP67 WATER PROOF HAND-HELD ENCLOSURE What's IP67? ●IP Code is an "Ingress Protection Marking" under IEC 60529 and rates the degree of protection provided against the intrusion, dust, and water. IP6x : Completely protected against contact dust tight
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LC/LCS/LCT135
LC/LCS/LCT135H
LC/LCS/LCT165
LC/LCS/LCT165H
LCT/LCS/LC115
LCT/LCS/LC115H
LCT/LCS/LC135
LCT/LCS/LC135H
LCT/LCS/LC165
LCT/LCS/LC165H
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NEC Ga FET marking L
Abstract: Ga FET marking 1D 2SJ209 TF101-D NEC Ga FET marking A NEC Ga FET marking z NEC Ga FET "marking M" NEC Ga FET
Text: AdLib OCR Evaluation MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8±0.2 00 + 1.5 1~t, c'! +1 0~ C14 U T 0~ 0.65 _+0015 Ll 2 FEATURES Lo I 3 d+ csI Marking M 6 + t L C5 1 . Sourco 2 . Ga . 3 . Drain " Directly driven by lCs; having a 5 V power supply .
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2SJ209
2SJ209,
NEC Ga FET marking L
Ga FET marking 1D
2SJ209
TF101-D
NEC Ga FET marking A
NEC Ga FET marking z
NEC Ga FET "marking M"
NEC Ga FET
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33E marking
Abstract: No abstract text available
Text: LCS16CXXL08 SERIES 5 3 " Brightking's LCS16CXXL08 series of TVS arrays are designed to protect sensitive ! $ " & ! " # ! % $ % $ ' ' ' ( )* $ ! & & ' $ ! % $ ! % % ' ! % ! $ ! " IEC61000-4-2 ESD 15kV Air, 8kV contact compliance +, ! ! - Protects eight I/O lines
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LCS16CXXL08
IEC61000-4-2
LCS16CXXL08
33E marking
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core EFD20
Abstract: 78m marking J-STD-02C
Text: RoHS EFD20 High Frequency Transformer AEFD20-3782 o ep ions @25 C Electrica lcSificat EFD20 Core Design 12 Pin SMD Flyback Topology Operating Temperature range: -20ºC to +105ºC Maximum reflow temperature: 250ºC/-5ºC for 20-40 seconds Refer to IPC/JEDEC J-STD-02C Standard
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EFD20
AEFD20-3782
J-STD-02C
50Hz/60Hz)
1000Vac,
500Vac,
5000Vac,
core EFD20
78m marking
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26-182 amphenol
Abstract: JSS50812 26-190-24S JSS50821 26-159-16 26-159-24P Amphenol blue ribbon 26series 24p marking code 26 08P 004
Text: 26 SERIES 26 SERIES RACK & PANEL CONNECTORS R&P-1 These connectors have been developed to provide a rugged heavy duty interconnection, where size is not a limited factor and large gauge wires can be used because of ribbon contact principle. These connectors have excellent
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JSS50812,
26-190-24S
26-24S-004
26-24S-99
26-182 amphenol
JSS50812
26-190-24S
JSS50821
26-159-16
26-159-24P
Amphenol blue ribbon
26series
24p marking code
26 08P 004
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WFA105K
Abstract: No abstract text available
Text: T H I R DA N G L EP R O J E C T I O N ITEM CODE ECWF2W104RKA 1 2W124RKA 1 1 2W154RKA 1 2W184RKA 1 1 2W224RKA H 2W274RKA 1 2W334RKA 1 1 2W394RKA 1 2W474RKA CAP F * L 104) 13 O .1 ( .0 1 O . 12 ( 124) 1 1 O . 15 ( 154) 1 O . 18 ( 184) 1 0.22 (224) 0.27 (274)
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T 3036
Abstract: bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036
Text: MlL-S-l 9500/288 24 Apdl 1964 MILITARY EL SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2377 . 1. SCOPE . i’ .- This specification *is~*l.dlo4mdo-ky~qmplifl&ciK.i~. 1.2 Outline and dlmemioru. - 1.3 Particular electrical coven the de?ajl requirem&ts “o,
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2N2377
MIL-S-19SCW288
MIL-s-19500/288
T 3036
bel transistor 1041 B
SAQ marking
2N23
2N2377
S19C
T3036
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W83L771ASG-2
Abstract: 771AWG W83L771AWG-2
Text: W83L771AWG W83L771ASG Nuvoton H/W Monitoring IC DATE: NOVEMBER 19TH, 2009 REVISION: 1.91 TABLE OF CONTENTS1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 1 1.1
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W83L771AWG
W83L771ASG
W83L771ASG-2
771AWG
W83L771AWG-2
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OM1209
Abstract: J-STD-020D SDH2812
Text: Low Profile, High Power, Shielded Drum Inductors SDH2812 Series HALOGEN HF Pb FREE Applications • • • • • • • • SMD Device Buck or boost inductor Cellular phones/ PDAs LED Photo flash LCD Displays Handheld/Mobile devices GPS Systems Digital cameras
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SDH2812
J-STD-020D
BU-SB091134
OM1209
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Untitled
Abstract: No abstract text available
Text: Low Profile, High Power, Shielded Drum Inductors SDH2812 Series HALOGEN HF Pb FREE Applications • • • • • • • • SMD Device Buck or boost inductor Cellular phones/ PDAs LED Photo flash LCD Displays Handheld/Mobile devices GPS Systems Digital cameras
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SDH2812
BU-SB08891
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ceag ghg 122 3121
Abstract: ceag ghg 534 ceag ghg 534 2506 crouse-hinds GHG 960 663 B0708 CEAG PTB 00 ATEX 3108 ceag ghg 412 ceag ghg 543 ceag GHG 543 2306 Ex-92
Text: C A T A L O G U E E X P L O S I O N P R O T E C T E D 3 1 0 P R O D U C T S The CEAG Sicherheitstechnik GmbH factory in Eberbach, Germany The CEAG Nortem SA Barcelona, Spain The factory in Sheerness, UK CEAG SICHERHEITSTECHNIK GMBH Essentials, Innovations and a few words about your money
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ambitious531
03/SL
D-69412
ceag ghg 122 3121
ceag ghg 534
ceag ghg 534 2506
crouse-hinds GHG 960 663
B0708
CEAG PTB 00 ATEX 3108
ceag ghg 412
ceag ghg 543
ceag GHG 543 2306
Ex-92
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GCM31
Abstract: gcm21 GCM43 GCM219 GCM43E gcm31c murata GCM15 -A GCM43R GCM catalog GCM32R
Text: !Note Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specifications or to transact the approval sheet for product specifications before ordering.
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AEC-Q200-004
Abstract: GCM31 GCM21 GCM catalog
Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.
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C03E-2
AEC-Q200-004
GCM31
GCM21
GCM catalog
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M995
Abstract: No abstract text available
Text: |V |IC Z R O N MT4LC4M4B1 L 4 MEG X 4 DRAM DRAM 4 MEG x 4 DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Plastic SOJ (300 mil) DJ • Refresh Rate
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180mW
048-cycle
24/26-Pin
M995
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Untitled
Abstract: No abstract text available
Text: MICRON • M T12D 136 MEG X 36, 2 MEG x 18 DRAM MODULE SeWCOWXCTOR MC DRAM „ . . _ I V I W a . . Ä _ 1 MEG x 36>2 MEG x 18 FAST PAGE MODE (MT12D136 LOW POWER, PEXTENDED Y T P M n P n RF REFRESH (MT12D136 L) MODULE W b k FEATURES OPTIONS MARKING • Timing
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MT12D136)
MT12D136
72-Pin
DE-12)
DE-18)
MT12D136M/G
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T9049
Abstract: A7005 MT9D49M-6
Text: » M I C-n Rw On Ni I iH M 49 4 MEGX 9 DRAMM OT9D DULE DRAM MODULE 4 MEG X 9 DRAM FAST PAGE MODE FEATURES OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT9D49M-6 PIN ASSIGNMENT Top View
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30-pin
025mW
024-cycle
MT9D49
A0-A10
T9049
A7005
MT9D49M-6
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Untitled
Abstract: No abstract text available
Text: M IC R O N MT8C8024 DRAM MODULE 1MEG x 8 DRAM FAST PAGE MODE PIN ASSIGNMENT (Top View OPTIONS Vcc CÄ5 DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 A9 NC DQ6 W Vss DQ7 NC DQ8 NC raS NC NC Vcc MARKING • Tim ing 80ns access 100ns access 120ns access
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MT8C8024
100ns
120ns
30-pin
MT8C8024
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Cherie
Abstract: t3d25
Text: |U 1IC =R O N DRAM k - _ Ä 2 56K X MT3D2569 9 DRAM MODULE 256K x 9 DRAM _ FAST PAGE MODE MT3D2569 LOW POWER, F EXTENDED V T F N n P D RF REFRESH (MT3D2569 L) M O D IW 1I^ FL — FEATURES MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 • Packages
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MT3D2569
30-pin
625mW
512-cycle
MT3D2569)
30DON
MT3D2568
T3D2569
Cherie
t3d25
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MT9068
Abstract: 30-pin SIMM 64k 30-pin SIMM 64k X 8 30-pin SIMM
Text: V IIC Z R O N MT9068 DRAM MODULE 64K PIN ASSIGNMENT (Top View Vcc CÄS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 NC NC NC OQ6 W Vss DQ7 NC DQ8 09 RÄ5 CÄS9 D9 Vcc MARKING • Timing 80ns access 100ns access 120ns access 150ns access -15 • Packages:
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MT9068
30-pin
450mW
MT9068
30-pin SIMM
64k 30-pin SIMM
64k X 8 30-pin SIMM
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MT4LC2M8E7
Abstract: No abstract text available
Text: 2 MEG x 8 EDO DRAM l^ lld R O N H P AM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT Top View OPTIONS 28-Pin SOJ (DA-3) 1• Vcc DQ1 c 2 DQ2C 3 □03 £ 4 DQ4C 5 WE# C 6 RAS# C 7 NCC 8 A 10L 9 A0 C 10 A l C 11 A2C 12 A3 13 Vcc 14 MARKING • Voltages
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28-Pin
MT4LC2M8E7
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Untitled
Abstract: No abstract text available
Text: Duplexers For Cordless Phone HHM Series FEATURES APPLICATIONS • Surface mountable type duplexers has LCs on multilayer substrate. • A GND electrode layer is incorporated on the mounting surface side. Accordingly, combination with the GND pattern of the mother board provides a high attenuation
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HHM0120
HHM0140
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marking aded
Abstract: marking Z marking lcs
Text: In High Value MLC Chip Capacitors High value, small physical size M LCs are now practical and able to compete with electrolytics. M LCs are compatible with reflow surface mount processing. This allows the designer to take advan tage of the lower ESRs and E S Ls of M LCs to pre
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50VDC
marking aded
marking Z
marking lcs
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transistor b985
Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
Text: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.
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250mm!
2SA1882/2SC4984
2SB1118/2SD1618
2SB1119/2SD1619
2SB1120
2SD1620
2SB1121/2SD1621
2SB1122/2SD1622
2SB1123/2SD1623
2SB1124/2SD1624
transistor b985
transistor b544
transistor b764
D1111 TRANSISTOR
C3117 TRANSISTOR
D1153
transistor D1207
TRANSISTOR D1347
transistor D863
B892
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WS57C291C
Abstract: WS57LV291C WS57LV291C-70 WS57LV291C-70T WS57LV291C-90 WS57LV291C-90T WSI Programming algorithm
Text: WS57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Fast Access Time — • Available in 300 Mil "Skinny" DIP • Immune to Latch-up t ACC = 70 ns — lcs = 20 ns • Low Power Consumption — —
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WS57LV291C
WS57LV291C
WS57C291C
WS57LV291C-70T
WS57LV291C-90T
WS57LV291C-70
WS57LV291C-90
WSI Programming algorithm
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