marking 93A
Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1144
Text: BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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Original
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OT-143
Q62702-F1144
900MHz
Dec-16-1996
marking 93A
RF NPN POWER TRANSISTOR 2.5 GHZ
Q62702-F1144
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PDF
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80846
Abstract: 022241 gummel
Text: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143
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Original
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OT-143
Q62702-F1611
900MHz
Dec-11-1996
80846
022241
gummel
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PDF
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marking 93A
Abstract: TRANSISTOR BI 187
Text: BFP 93A NPN Silicon RF Transistor 3 For low distortion broadband amplifier and oscillators up to 2GHz at collector currents from 4 5 mA to 30 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 93A
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Original
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VPS05178
OT-143
900MHz
Oct-12-1999
marking 93A
TRANSISTOR BI 187
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R
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Original
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BFP181R
OT143R
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PDF
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BFP181R
Abstract: No abstract text available
Text: BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R
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Original
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BFP181R
OT143R
BFP181R
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PDF
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BFP181R
Abstract: No abstract text available
Text: BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R
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Original
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BFP181R
OT143R
Jun-21-2001
BFP181R
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PDF
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Q62702-F1594
Abstract: transistor marking RHs
Text: BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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OT-143R
Q62702-F1594
900MHz
Jan-21-1997
Q62702-F1594
transistor marking RHs
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP 181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 181R
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Original
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OT-143R
Oct-12-1999
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PDF
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GMA marking
Abstract: IC 2272
Text: BFP 182R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 182R
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Original
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OT-143R
900MHz
Oct-12-1999
GMA marking
IC 2272
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PDF
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SPICE 2G6
Abstract: No abstract text available
Text: BFP183R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs
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Original
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BFP183R
OT143R
SPICE 2G6
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PDF
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sot143 Marking code RHs
Abstract: Q62702-F1382
Text: BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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OT-143
Q62702-F1382
900MHz
Dec-13-1996
sot143 Marking code RHs
Q62702-F1382
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PDF
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transistor marking RHs
Abstract: G1816
Text: BFP 183R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 183R
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Original
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OT-143R
900MHz
Oct-12-1999
transistor marking RHs
G1816
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PDF
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BFP182R
Abstract: TRANSISTOR BI 187
Text: BFP182R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs
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Original
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BFP182R
OT143R
900MHz
Aug-09-2001
BFP182R
TRANSISTOR BI 187
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PDF
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BFP183R
Abstract: transistor marking RHs
Text: BFP183R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs
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Original
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BFP183R
OT143R
900MHz
Aug-09-2001
BFP183R
transistor marking RHs
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP182R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs
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Original
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BFP182R
OT143R
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP182 NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4 fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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Original
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BFP182
VPS05178
OT143
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PDF
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sot143 Marking code RHs
Abstract: No abstract text available
Text: BFP183 NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4 fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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Original
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BFP183
VPS05178
OT143
sot143 Marking code RHs
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PDF
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bfp183
Abstract: VPS05178
Text: BFP183 NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4 fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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Original
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BFP183
VPS05178
OT143
900MHz
Aug-10-2001
bfp183
VPS05178
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PDF
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marking 93A
Abstract: No abstract text available
Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type
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OCR Scan
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Q62702-F1144
OT-143
900MHz
marking 93A
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611
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OCR Scan
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Q62702-F1611
OT-143
0535bOS
900MHz
fl235b05
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-rioise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 81 FAs
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OCR Scan
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Q62702-F1611
OT-143
900MHz
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PDF
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1s211
Abstract: 2I k
Text: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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Q62702-F1594
OT-143R
900MHz
1S211
2I k
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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Q62702-F1382
OT-143
235bQ5
BFP183
900MHz
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PDF
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BF96I
Abstract: T0-50 s525 BF964S BF96
Text: Tem ic S e m i c o n d u c t o r s TOSO 3 # TOSO (4) # SOT23 SOT143 SOT343 RF Transistors Part Number Marking Electrica) Characteristics V DS fomax V mA mW °C Y ft at Id s Gps and F mS dB mA at f Cjsçgi and CDst at f dB MHz pF pF MH? Id s s a* V u s mA
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OCR Scan
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OT143
OT343
BF994S
BF995
BF996S
BF998
S888T
BF543
S525T
BF96I
T0-50
s525
BF964S
BF96
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PDF
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