BFG540 N43
Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE
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BF547
BF547W
BF689K
BF747
OT323
OT353
OT143
BFG540 N43
w1p 22
SOT23 W1P
sot143 Marking code V12
"W1P"
f763
SOT89 MARKING CODE
marking code V3
SOT89 N5 MARKING CODE
V3 marking code
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SOT23 W1P
Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23
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BF547
BF547W
BF747
BFC505
OT323
OT353
OT143
SOT23 W1P
MARKING W1P
transistor w1P
MARKING W2 SOT23
marking code R2 sot23
marking code w2 sot23
marking code W1p
marking code P2p SOT23
marking W1 sot23
marking code w2 sot323
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12N6L
Abstract: No abstract text available
Text: RFD12N06RLESM October 2013 Data Sheet N-Channel UltraFET Power MOSFET 60 V, 17 A, 71 mΩ Packaging Features JEDEC TO-252AA DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE and SABER
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RFD12N06RLESM
O-252AA
RFD12N06RLESM9A
12N6LE
RFD12N06RLESM9A
RFD12N06RLESM
12N6L
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N5 npn transistor
Abstract: marking N5 RF marking CODE n5 marking n5 amplifier marking CODE n5 amplifier n5 amplifier MSC3130T1
Text: LESHAN RADIO COMPANY, LTD. NPN RF Amplifier Transistor Surface Mount MSC3130T1 COLLECTOR 3 3 2 1 2 BASE 1 EMITTER CASE 318D–03, STYLE 1 SC–59 MAXIMUM RATINGS T A = 25 °C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous
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MSC3130T1
N5 npn transistor
marking N5 RF
marking CODE n5
marking n5 amplifier
marking CODE n5 amplifier
n5 amplifier
MSC3130T1
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bv42 transistor
Abstract: bv42 27e5 LM324 FDSS2407 injector driver 33E10 marking n9 8-pin PIN diode Pspice model
Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate
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FDSS2407
FDSS2407
bv42 transistor
bv42
27e5
LM324
injector driver
33E10
marking n9 8-pin
PIN diode Pspice model
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TC227
Abstract: No abstract text available
Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate
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FDSS2407
FDSS2407
TC227
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MARKING SMD IC CODE
Abstract: Motorola transistor smd marking codes PSB 21493 Motorola semiconductor smd marking codes MARKING SMD IC CODE 10 pin PEB 22622 SOCRATES ef 16 transformer ic SMD MARKING CODE ad 5.9 PEF 22622 EPCOS B82793
Text: Inductors for Telecommunications Data Sheet Collection 2002 Inductors for Telecommunications The race on the digital information highway is already underway. Growing data traffic volumes are demanding increasingly higher transmission rates. And multimedia services, such as radio and television on the Internet, audio and video streaming, videoconferencing, video-on-demand, e-commerce, etc. require data speeds that far outstrip the rates used by analog technology. Only digital
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marking N5 mmic
Abstract: mmic n5 marking n5 amplifier RF TRANSISTOR 586 EDS-101105 NGA-586 RF amplifier GHz driver n5 359 rf amplifier marking n5 SIRENZA MARKING
Text: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with
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NGA-586
NGA-586
EDS-101105
marking N5 mmic
mmic n5
marking n5 amplifier
RF TRANSISTOR 586
RF amplifier GHz
driver n5 359
rf amplifier marking n5
SIRENZA MARKING
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NGA-589
Abstract: marking n5 amplifier 6.0 GHZ marking n5 amplifier
Text: Product Description Stanford Microdevices NGA-589 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases
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NGA-589
NGA-589
EDS-100376
marking n5 amplifier 6.0 GHZ
marking n5 amplifier
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SIRENZA MARKING
Abstract: No abstract text available
Text: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with
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NGA-586
NGA-586
EDS-101105
SIRENZA MARKING
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Untitled
Abstract: No abstract text available
Text: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with
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NGA-586
NGA-586
EDS-101105
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NGA-586
Abstract: EDS-101105 marking n5 amplifier marking n5 DBM
Text: Product Description Stanford Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases
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NGA-586
NGA-586
EDS-101105
marking n5 amplifier
marking n5 DBM
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marking N5 mmic
Abstract: NGA589
Text: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-589
NGA589
EDS-100376
marking N5 mmic
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marking N5 mmic
Abstract: marking n5 amplifier NGA-589 marking n5 amplifier 6.0 GHZ mmic n5
Text: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-589
NGA-589
NGA589
EDS-100376
marking N5 mmic
marking n5 amplifier
marking n5 amplifier 6.0 GHZ
mmic n5
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Untitled
Abstract: No abstract text available
Text: HMC699LP5 / 699LP5E v00.0608 7 GHz INTEGER N SYNTHESIZER N = 56 - 519 Typical Applications Features The HMC699LP5(E) is ideal for: Ultra Low SSB Phase Noise Floor: -153 dBc/Hz @ 10 kHz offset @ 100 MHz Reference Frequency. • Satellite Communication Systems
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HMC699LP5
699LP5E
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Untitled
Abstract: No abstract text available
Text: HMC698LP5 / 698LP5E v03.0709 7 GHz INTEGER N SYNTHESIZER N = 12 - 259 Typical Applications Features The hMC698LP5(E) is ideal for: Ultra Low ssB Phase Noise Floor: -153 dBc/hz @ 10 khz offset @ 100 Mhz Reference Frequency. • satellite Communication systems
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HMC698LP5
698LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: HMC698LP5 / 698LP5E v00.0608 7 GHz INTEGER N SYNTHESIZER N = 12 - 259 Typical Applications Features The HMC698LP5(E) is ideal for: Ultra Low SSB Phase Noise Floor: -153 dBc/Hz @ 10 kHz offset @ 100 MHz Reference Frequency. • Satellite Communication Systems
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HMC698LP5
698LP5E
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Untitled
Abstract: No abstract text available
Text: HMC698LP5 / 698LP5E v01.0808 7 GHz INTEGER N SYNTHESIZER N = 12 - 259 Typical Applications Features The HMC698LP5(E) is ideal for: Ultra Low SSB Phase Noise Floor: -153 dBc/Hz @ 10 kHz offset @ 100 MHz Reference Frequency. • Satellite Communication Systems
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HMC698LP5
698LP5E
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marking N5 RF
Abstract: HMC698LP5E Digital Pulse Counter Two Digit HMC698LP5 vco hmc
Text: HMC698LP5 / 698LP5E v03.0709 7 GHz INTEGER N SYNTHESIZER N = 12 - 259 Typical Applications Features The HMC698LP5(E) is ideal for: Ultra Low SSB Phase Noise Floor: -153 dBc/Hz @ 10 kHz offset @ 100 MHz Reference Frequency. • Satellite Communication Systems
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HMC698LP5
698LP5E
marking N5 RF
HMC698LP5E
Digital Pulse Counter Two Digit
vco hmc
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resistor array 10k
Abstract: No abstract text available
Text: HMC698LP5 / 698LP5E v02.0309 7 GHz INTEGER N SYNTHESIZER N = 12 - 259 Typical Applications Features The HMC698LP5(E) is ideal for: Ultra Low SSB Phase Noise Floor: -153 dBc/Hz @ 10 kHz offset @ 100 MHz Reference Frequency. • Satellite Communication Systems
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HMC698LP5
698LP5E
resistor array 10k
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HMC698LP5
Abstract: h698 hmc698 marking N5 RF
Text: HMC698LP5 / 698LP5E v03.0709 7 GHz INTEGER N SYNTHESIZER N = 12 - 259 Typical Applications Features The HMC698LP5(E) is ideal for: Ultra Low SSB Phase Noise Floor: -153 dBc/Hz @ 10 kHz offset @ 100 MHz Reference Frequency. • Satellite Communication Systems
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HMC698LP5
698LP5E
25mm2
h698
hmc698
marking N5 RF
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SOT23 W1P
Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X
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BF547
BF547W
BF689K
BF747
BF763
BFC505
BFC520
BFE505
BFE520
BFG10
SOT23 W1P
BFG540 N43
SOT89 MARKING CODE
"W1P"
MARKING W1P
sot143 Marking code p1
PSH10
sot143 sot343
marking code V3
w1p code
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4249 TV VHF RF A MPLIFIER APPLICATIONS Unit in nun 2.1 ±0.1 . High Gain : Gpe=24dB Typ. (f=200MHz) . Low Noise : N F = 2 .OdB(Typ.) (f=200MHz) . Excellent Forward AGC Characteristics _ CM o •n o -H CJ Iin •£> 1ft
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2SC4249
200MHz)
M-15T
M-25T
2S04249
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r0003
Abstract: 2322 640 98005 NTC 2322 640 98005
Text: j 2322 640 90005 2322 640 98005 ^ A S S E M B L Y RANGE NTC THERMISTORS m oulded range Features • D esigned for harsh e n viro nm en ts T E M P E R A T U R E S E N S IN G A N D C O N T R O L T E M P E R A T U R E C O M P E N S A T IO N • Ex cellen t for su rface tem peratu re m easu rem ent
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MS200/50)
r0003
2322 640 98005
NTC 2322 640 98005
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