KM23V4000D
Abstract: KM23V4000DG
Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23V4000D(G) is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.
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KM23V4000D
512Kx8)
32-DIP
KM23V4000DG
32-SOP.
32-SOP-525
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Q721
Abstract: KM23V4000D KM23V4000DG
Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23V4000D(G) is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.
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KM23V4000D
512Kx8)
32-DIP
KM23C4000DG
32-SOP.
32-SOP-525
118MAX
822MAX
Q721
KM23V4000DG
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mx23l3254mc-20g
Abstract: No abstract text available
Text: MX23L3254 32M-BIT Low Voltage, Serial Mask ROM Memory with 50MHz SPI Bus Interface FEATURES DESCRIPTION • • • • The MX23L3254 is a 32Mbit 4M x 8 Serial Mask ROM accessed by a high speed SPI-compatible bus. 32Mbit of Mask ROM 3.0 to 3.6V Single Supply Voltage
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MX23L3254
32M-BIT
50MHz
32Mbit
MX23L3254
32Mbit
16-PIN
mx23l3254mc-20g
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MX23L3254MC-20G
Abstract: 8096 microcontroller features MX23L3254 MX23L3254MC-20 MX23L3254MI-20G ST10
Text: MX23L3254 32M-BIT Low Voltage, Serial Mask ROM Memory with 50MHz SPI Bus Interface FEATURES DESCRIPTION • • • • The MX23L3254 is a 32Mbit 4M x 8 Serial Mask ROM accessed by a high speed SPI-compatible bus. 32Mbit of Mask ROM 2.7 to 3.6V Single Supply Voltage
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MX23L3254
32M-BIT
50MHz
MX23L3254
32Mbit
32Mbit
16-PIN
pac2005
JUN/08/2005
MX23L3254MC-20G
8096 microcontroller features
MX23L3254MC-20
MX23L3254MI-20G
ST10
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Untitled
Abstract: No abstract text available
Text: K3N3V U 3000D-D(G)C CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The K3N3V(U)3000D-D(G)C is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.
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3000D-D
512Kx8)
3000D-DC
32-DIP
3000D-GC
32-SOP.
100pF
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Untitled
Abstract: No abstract text available
Text: K3N3V U 3000D-D(G)C CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The K3N3V(U)3000D-D(G)C is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.
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3000D-D
512Kx8)
3000D-DC
32-DIP
3000D-GC
32-SOP.
32-DIP-600
32-SOP-525
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mask ROM
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH53F4P00 4M Mask ROM Model No.: LHMD09xx Ref No.: NP 176C Issue Date: April 1997 4Mbit, Mask ROM, 5V, 120 ns, 44 SOP, LH53F4P00
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LH53F4P00
LHMD09xx)
mask ROM
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uPD23C4001EJ
Abstract: UPD23C4001EJGW uPD23C4001 PD23C4001 PD23C4001EJ nec 40-pin plastic dip
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C4001EJ 4M-BIT MASK-PROGRAMMABLE ROM 512K-WORD BY 8-BIT Description The µPD23C4001EJ is a 4,194,304 bits 524,288 words by 8 bits mask-programmable ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.
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PD23C4001EJ
512K-WORD
PD23C4001EJ
32-pin
40-pin
uPD23C4001EJ
UPD23C4001EJGW
uPD23C4001
PD23C4001
nec 40-pin plastic dip
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Untitled
Abstract: No abstract text available
Text: KM23C4000H CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •
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KM23C4000H
512Kx8)
100ns
100/iA
32-pin
KM23C4000H
288x8
4000H
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Untitled
Abstract: No abstract text available
Text: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2 l097,1S2x16(word mode) The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is
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KM23V32005BG
32M-Bit
/2Mx16)
304x8
1S2x16
KM23V32005BG
152x16
KM23V
5BG-10
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KM23C4000B
Abstract: mask rom
Text: CMOS MASK ROM KM23C4000B G 4M-Bit (512Kxfy CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23C4000B is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon-gate CMOS process technology.
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KM23C4000B
512Kxfy
32-DIP,
KM23C4000BG
32-SOP,
120ns
mask rom
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Untitled
Abstract: No abstract text available
Text: KM23C4000H G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000H is a fully static mask programmable ROM organized 524,288 x 8 brt. It Is fabricated using sillcon-gate CMOS process technology. • • •
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KM23C4000H
512Kx8)
100ns
32-pin
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KM23C4001b
Abstract: mask rom TA-51
Text: KM23C4001B G CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001B is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization
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KM23C4001B
512KX8)
120ns
32-pin,
600mll,
288x8
mask rom
TA-51
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mask rom
Abstract: No abstract text available
Text: KM23C64000 CMOS MASK ROM 64M-Btt 4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C64000 is a fully static mask programmable ROM • • • • 4,194,304 X 16 bit organization Fast access time : 100ns(Max.) Supply voltage: single +5V
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KM23C64000
64M-Btt
4Mx16)
100ns
42-DIP-600
KM23C64000
100pF
KM23C64MMM0
KM23CC4000-12
mask rom
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E i • V^bMlME OD lb'nS 3b7 «SPICK KM23C4001B G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001B is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using
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KM23C4001B
512Kx8)
288x8
120ns
32-pin,
600mil,
KM23C4001B)
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mask rom
Abstract: mask rom 4M
Text: MASK ROM 1. OUTLINE The MASK ROM IC MEMORY CARD series is made up of Mask ROM chips. The memory sizes available are from 128K Bytes to 4M Bytes. IE series is 8 bit wide data bus. 2. VARIATION Part Number MRC128IEC0 MRC256IEC0 MRC512IEC0 MRC100IEC0 MRC200IEC0
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MRC128IEC0
MRC256IEC0
MRC512IEC0
MRC100IEC0
MRC200IEC0
MRC400IEC0
A0-A21
128KB
256KB
mask rom
mask rom 4M
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KM23C4000
Abstract: No abstract text available
Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION The KM23C4000D(G) is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all
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KM23C4000D
512Kx8)
288x8
KM23C4000D
32-DIP-600
KM23C4000DG
32-SOP-525
100pF
KM23C4000
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7Tb4142 KM23C4000B G GGlbTflE 70=5 CMOS MASK ROM 4M-Bit (512Kx&f CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000B is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using
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7Tb4142
KM23C4000B
512Kx
120ns
32-pin
KM23C4000B)
KM23C4000BG)
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23c64000
Abstract: 64M-BIT ROM 2710
Text: CMOS MASK ROM KM23C64000 64M-Bit 4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C64000 is a fully static mask program m able ROM • • • • 4,194,304 x 16 bit organization Fast access tim e : 120ns(Max.) Supply voltage : single +5V
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KM23C64000
64M-Bit
4Mx16)
120ns
23C64000
42-DIP-600
23C64000
42-DIP-600)
64M-BIT
ROM 2710
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KM23C4000AG
Abstract: No abstract text available
Text: KM23C4000A CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M ^ JC 40U U A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using silicon-gate C M OS process technology.
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KM23C4000A
512Kx8)
150ns
32-pin
KM23C4000A)
KM23C4000AG)
KM23C4000AG
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mb838200
Abstract: A5121
Text: August 1992 Edition 1.0A FUJITSU DATA SHEET MB98A5101X-, 5111x-, 5121x-, 5131x-, and 5141x-25 Mask ROM Memory Card IM-. 2M-. 4M-. 8M-. and 16M-BYTE The Fujitsu MB98A5101x, MB98A5111x, MB98A5121x, MB98A5131x and MB98A5141x are Mask Programmable Read Only Memory Mask ROM cards
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MB98A5101X-,
5111x-,
5121x-,
5131x-,
5141x-25
16M-BYTE
MB98A5101x,
MB98A5111x,
MB98A5121x,
MB98A5131x
mb838200
A5121
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Untitled
Abstract: No abstract text available
Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000D(E)TY is a fully static mask programmable ROM organized 524,288 x 8bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all
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KM23C4000D
512KX8)
32-TSQP1-0820
100pF
KM2JC4000D
KM23C4
TY-10
KMZ3C4000D
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lh5s4axx
Abstract: sharp mask rom LH53F4600 lh5s4 LH5S flash memory 4m 44-pin
Text: LH53F4600 4M Mask ROM SHARP LH53F4600 • Description Flash Memory Compatible pinout 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53F4600N User’s No. : LH-5S4ZXX is a CMOS 4Mbit mask-programmable ROM organized as 524 288 X 8 bits (Byte mode) or 262 144 X 16 bits (Word mode) that can be
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LH53F4600
LH53F4600N
16-bit
lh5s4axx
sharp mask rom
LH53F4600
lh5s4
LH5S
flash memory 4m 44-pin
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km23c4000
Abstract: No abstract text available
Text: CMOS MASK ROM KM23C4000 4M-Bit 512KX8 CMOS M ASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000 is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using siiicon-gate CMOS process technology. • • • •
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KM23C4000
512KX8)
150ns
32-pin
KM23C4000
288x8
KM23C4000)
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