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    Banner Engineering Corp EZA-MBK-18 (72057)

    Eza-Mbk-18 Ez Screen Accessory Retrofitd-J Safesc, EZA Series
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    RS EZA-MBK-18 (72057) Bulk 3 Weeks 1
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    MBK187 Datasheets Context Search

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    HZG469

    Abstract: PHN203
    Contextual Info: PHN203 Dual N-channel TrenchMOS logic level FET Rev. 03 — 26 January 2004 M3D315 Product data 1. Product profile 1.1 Description Dual logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


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    PHN203 M3D315 OT96-1 HZG469 PHN203 PDF

    GP 821

    Abstract: BLT61 MS-012AA
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT61 UHF power transistor Preliminary specification Supersedes data of 1996 Feb 05 1998 Jan 28 Philips Semiconductors Preliminary specification UHF power transistor BLT61 PINNING FEATURES • High efficiency PIN • High gain


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    M3D315 BLT61 OT96-1 MBK187 SCA57 125108/00/02/pp8 GP 821 BLT61 MS-012AA PDF

    transistor bd139

    Abstract: philips power transistor bd139 BD139 smd transistor zi
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES • High efficiency


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    M3D315 BLT71/8 OT96-1 SCA55 127067/00/02/pp12 transistor bd139 philips power transistor bd139 BD139 smd transistor zi PDF

    HZG336

    Abstract: PHN103T 03ac29
    Contextual Info: PHN103T N-channel enhancement mode field-effect transistor Rev. 02 — 28 April 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features • TrenchMOS™ technology


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    PHN103T HZG336 PHN103T 03ac29 PDF

    SI4884

    Abstract: MS-012AA
    Contextual Info: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .


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    SI4884 M3D315 SI4884 OT96-1 OT96-1, MS-012AA PDF

    PSMN038-100K

    Contextual Info: PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.


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    PSMN038-100K OT96-1 PSMN038-100K OT96-1, PDF

    UZZ7000T

    Abstract: MV3008
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 UZZ7000T Trigger amplifier with two wire current interface Preliminary specification 2000 Sep 05 Philips Semiconductors Preliminary specification Trigger amplifier with two wire current interface FEATURES UZZ7000T


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    M3D315 UZZ7000T 613520/01/pp8 UZZ7000T MV3008 PDF

    si4800

    Abstract: 03af85 MS-012AA Si4800 philips
    Contextual Info: Si4800 N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4800 in SOT96-1 SO8 .


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    Si4800 M3D315 Si4800 OT96-1 OT96-1, 03af85 MS-012AA Si4800 philips PDF

    PHK12NQ03LT

    Contextual Info: PHK12NQ03LT N-channel TrenchMOS logic level FET Rev. 02 — 02 March 2004 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low on-state resistance


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    PHK12NQ03LT M3D315 OT96-1 MBB076 PHK12NQ03LT PDF

    UZZ7001T

    Abstract: MLD402
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 UZZ7001T Trigger amplifier with open collector output Preliminary specification 2000 Sep 05 Philips Semiconductors Preliminary specification Trigger amplifier with open collector output FEATURES UZZ7001T PINNING • Differential input trigger amplifier


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    M3D315 UZZ7001T 613520/01/pp8 UZZ7001T MLD402 PDF

    BY206

    Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in


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    BLW34 BY206 C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor PDF

    BLW80

    Abstract: transistor rf m 1104
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the


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    BLW80 BLW80 transistor rf m 1104 PDF

    transistor D 2578

    Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting


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    BLW90 SC08a transistor D 2578 BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook PDF

    PHK5NQ15T

    Contextual Info: PHK5NQ15T TrenchMOS standard level FET Rev. 01 — 20 January 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK5NQ15T in SOT96-1 SO8 .


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    PHK5NQ15T M3D315 PHK5NQ15T OT96-1 OT96-1, PDF

    PHK12NQ10T

    Contextual Info: PHK12NQ10T TrenchMOS standard level FET Rev. 01 — 15 September 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounting package


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    PHK12NQ10T M3D315 OT96-1 PHK12NQ10T PDF

    PHK24NQ04LT

    Contextual Info: PHK24NQ04LT TrenchMOS logic level FET Rev. 01 — 12 September 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK24NQ04LT in SOT96-1 SO8 .


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    PHK24NQ04LT M3D315 PHK24NQ04LT OT96-1 PDF

    MDA380

    Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


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    BLU99 BLU99/SL BLU99 OT122A) BLU99/SL MDA380 4312 020 36642 MDA385 TRANSISTOR SL 100 "2222 352" PDF

    PHK13N03LT

    Abstract: 11611
    Contextual Info: PHK13N03LT TrenchMOS logic level FET M3D315 Rev. 01 — 23 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK13N03LT in SOT96-1 SO8 .


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    PHK13N03LT M3D315 PHK13N03LT OT96-1 11611 PDF

    HZG469

    Abstract: Si9410DY
    Contextual Info: Si9410DY N-channel TrenchMOS logic level FET Rev. 03 — 23 January 2004 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 2. Features • Low on-state resistance ■ Fast switching


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    Si9410DY M3D315 OT96-1 MBK187 MBB076 HZG469 PDF

    MS-012AA

    Abstract: PHK12NQ03LT
    Contextual Info: PHK12NQ03LT TrenchMOS logic level FET Rev. 01 — 22 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1technology. Product availability: PHK12NQ03LT in SOT96-1 SO8 .


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    PHK12NQ03LT M3D315 PHK12NQ03LT OT96-1 OT96-1, MS-012AA PDF

    PSMN085-150K

    Contextual Info: PSMN085-150K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.


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    PSMN085-150K OT96-1 PSMN085-150K OT96-1, PDF

    PSMN005-30K

    Contextual Info: PSMN005-30K TrenchMOS logic level FET Rev. 01 — 6 March 2002 Product data 1. Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package. Product availability:


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    PSMN005-30K OT96-1 PSMN005-30K OT96-1, MBK187 PDF

    DC TO DC convertor

    Abstract: PSMN165-200K
    Contextual Info: PSMN165-200K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.


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    PSMN165-200K OT96-1 PSMN165-200K OT96-1, DC TO DC convertor PDF

    Si9410DY

    Contextual Info: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .


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    Si9410DY M3D315 OT96-1 OT96-1, PDF