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    MBM29F017E Search Results

    MBM29F017E Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBM29F017E12TN Fujitsu Flash Memory CMOS 16M (2M x 8) Bit Original PDF
    MBM29F017E12TR Fujitsu Flash Memory CMOS 16M (2M x 8) Bit Original PDF
    MBM29F017E70TN Fujitsu Flash Memory CMOS 16M (2M x 8) Bit Original PDF
    MBM29F017E70TR Fujitsu Flash Memory CMOS 16M (2M x 8) Bit Original PDF
    MBM29F017E90TN Fujitsu Flash Memory CMOS 16M (2M x 8) Bit Original PDF
    MBM29F017E90TR Fujitsu Flash Memory CMOS 16M (2M x 8) Bit Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MARKETING REQUIREMENTS DOCUMENT AE0.1E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F017E 70/90/12 • FEATURES • 0.23 µm Process Technology • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    Original     		PDF MBM29F017E 48-pin

    BC55

    Abstract: BC-55 BA55 BC 55
    Text: Flash Memory Data Sheet Table Latest Version 5V Flash AE project October 6, '00 Italic Letter : Revised Point Capacity Part Number English AE Code AE spec Rev, 2M 4M 8M Japanese AE Code Document Code Target Spec Preliminary TS05DS05- Final On Web MBM29F002TC/BC-55/70/90


    Original     		PDF TS05DS05- TS05- DS05- 20868-3E 20867-3E MBM29F002TC/BC-55/70/90 MBM29F200TC/BC-55/70/90 MBM29F004TC/BC-70/90 MBM29F040C-55/70/90 MBM29F400TC/BC-55/70/90 BC55 BC-55 BA55 BC 55