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SPC Multicomp MCGPR50V337M10X21 Aluminium Electrolytic Capacitor, Gpr Series, 330 - F, - 20%, 50 V, 10 Mm, Radial Leaded Rohs Compliant: Yes \|Multicomp Pro MCGPR50V337M10X21
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	MCGPR50V337M10X21	Bulk	31,017		1	1 $0.818 10 $0.507 100 $0.422 1000 $0.273 10000 $0.207	Buy Now
SPC Multicomp MCGPR10V227M6.3X11 Capacitance:220Μf; Voltage(Dc):10V; Capacitance Tolerance:± 20%; Capacitor Terminals:Radial Leaded; Lifetime @ Temperature:2000 Hours @ 85°C; Polarity:Polar; Capacitor Case/Package:Radial Leaded; Lead Spacing:2.5Mm; Product Width:-Rohs Compliant: Yes \|Multicomp Pro MCGPR10V227M6.3X11
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	MCGPR10V227M6.3X11	Bulk	6,014		1	1 $0.291 10 $0.137 100 $0.115 1000 $0.072 10000 $0.053	Buy Now
SPC Multicomp MCGPR10V107M5X11 Capacitance:100Μf; Voltage(Dc):10V; Capacitance Tolerance:± 20%; Capacitor Terminals:Radial Leaded; Lifetime @ Temperature:2000 Hours @ 85°C; Polarity:Polar; Capacitor Case/Package:Radial Leaded; Lead Spacing:2Mm; Product Length:- Rohs Compliant: Yes \|Multicomp Pro MCGPR10V107M5X11
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	MCGPR10V107M5X11	Bulk	3,602		1	1 $0.198 10 $0.08 100 $0.068 1000 $0.041 10000 $0.034	Buy Now
SPC Multicomp MCGPR50V335M5X11 Capacitor Alum Elec, 3.3Uf, 50V; Capacitance:3.3Μf; Voltage(Dc):50V; Capacitance Tolerance:± 20%; Capacitor Terminals:Radial Leaded; Lifetime @ Temperature:2000 Hours @ 85°C; Polarity:Polar; Capacitor Case/Package:Radial Leaded Rohs Compliant: Yes \|Multicomp Pro MCGPR50V335M5X11
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	MCGPR50V335M5X11	Bulk	3,559		1	1 $0.198 10 $0.08 100 $0.068 1000 $0.041 10000 $0.034	Buy Now
SPC Multicomp MCGPR50V474M5X11 Aluminum Electrolytic Capacitor 0.47Uf, 50V, 20%, Radial; Capacitance:0.47Μf; Voltage(Dc):50V; Capacitance Tolerance:± 20%; Capacitor Terminals:Through Hole; Lifetime @ Temperature:2000 Hours @ 85°C; Polarity:Polar; Lead Spacing:2Mm Rohs Compliant: Yes \|Multicomp Pro MCGPR50V474M5X11
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	MCGPR50V474M5X11	Bulk	3,470		1	1 $0.205 10 $0.083 100 $0.07 1000 $0.043 10000 $0.035	Buy Now

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Catalog Datasheet	MFG & Type	Document Tags	PDF
mrfe6vp5600hs Abstract: MRFE6VP5600H Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26P100â	PDF
303 2170 001 Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453 Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies	Original	MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HR6 303 2170 001 ATC100B0R6BT500XT J637 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR	Original	MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1	PDF
ATC200B103KT50X Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X	PDF
G2225X7R225KT3AB Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6	PDF
mosfet j172 Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT09MS031N AFT09MS031NR1 AFT09MS031GNR1 AFT09MS031NR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage	Original	MW7IC2040N MW7IC2040N MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial	Original	MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3	PDF
Untitled Abstract: No abstract text available Text: Document Number: MW7IC915N Rev. 1, 12/2009 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage struc-	Original	MW7IC915N MW7IC915N MW7IC915NT1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at	Original	MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all	Original	MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3	PDF

Untitled Abstract: No abstract text available Text: User’s Manual µPD780862 Subseries 8-Bit Single-Chip Microcontrollers µPD780861 µPD780862 µPD78F0862 µPD78F0862A µPD780861 A µPD780862(A) µPD78F0862(A) µPD78F0862A(A) µPD780861(A1) µPD780862(A1) µPD78F0862A(A1) µPD780861(A2) µPD780862(A2) µPD78F0862A(A2)	Original	PD780862 PD780861 PD780862 PD78F0862 PD78F0862A PD780861 PD78F0862 PD78F0862A	PDF
ATC600F0R1BT250XT Abstract: No abstract text available Text: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for	Original	MRF8P18265H MRF8P18265HR6 MRF8P18265HSR6 ATC600F0R1BT250XT	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with	Original	MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with	Original	MRF8S18260H MRF8S18260HR6 MRF8S18260HSR6 MRF8S18260HR6	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,	Original	MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5	PDF
Z25 transistor Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1 Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1	PDF
TRANSISTOR J477 Abstract: TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17 Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17	PDF
NI-1230-4H Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 NI-1230-4H ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS	PDF
transistor j241 Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448 Text: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of	Original	AFT18P350--4S2L AFT18P350-4S2LR6 DataAFT18P350--4S2L 4/2013Semiconductor, transistor j241 aft18P350-4 x3c19p1 j485 transistor j449 j448	PDF
GRM31CR72A105K Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 1, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies	Original	MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 MRF6V12500H GRM31CR72A105K	PDF

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MCGPR Search Results

MCGPR Price and Stock

SPC Multicomp MCGPR50V337M10X21

SPC Multicomp MCGPR10V227M6.3X11

SPC Multicomp MCGPR10V107M5X11

SPC Multicomp MCGPR50V335M5X11

SPC Multicomp MCGPR50V474M5X11

MCGPR Datasheets Context Search

mrfe6vp5600hs

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303 2170 001

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ATC200B103KT50X

G2225X7R225KT3AB

mosfet j172

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ATC600F0R1BT250XT

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Z25 transistor

TRANSISTOR J477

NI-1230-4H

transistor j241

GRM31CR72A105K