SOF-26
Abstract: SZP-3026Z
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
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SZP-3026Z
SOF-26
SZP-3026Z
EDS-104666
SZP-3026Z*
SZP-3026Z-EVB1
SOF-26
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Untitled
Abstract: No abstract text available
Text: SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier SZP-3026Z Preliminary 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor
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SZP-3026Z
SOF-26
SZP-3026Z
EDS-104666
SZP-3026Z*
SZP-3026Z-EVB1
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Untitled
Abstract: No abstract text available
Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026 P1dB =33.6dBm at 5V 802.11g 54Mb/s Class AB Performance RF IN POUT =26dBm at 2.5% EVM, VCC 5V, 570mA POUT =27dBm at 2.5% EVM,
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RFPA3026
54Mb/s
27dBm
513mA
26dBm
570mA
DS120110
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Untitled
Abstract: No abstract text available
Text: RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM,
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RFPA2226
RFPA2226
54Mb/s
26dBm
27dBm
MCH185A5R6DK
MCH182CN104K
600S1R6JW250
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Untitled
Abstract: No abstract text available
Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance
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SZP-2026Z
SOF-26
SZP-2026Z
54Mb/s
26dBm
27dBm
SZP-2026Zâ
DS110620
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600S100JW250
Abstract: cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18
Text: RFPA2226 RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM, VCC 6V
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RFPA2226
RFPA2226
54Mb/s
26dBm
27dBm
MCH185A5R6DK
MCH182CN104K
600S1R6JW250
600S100JW250
cap 10pF 50V 10 0603 X7R
600S2R0JW250
MCH18
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SZP-3026Z
Abstract: ma 529 SZP3026 SOF-26 3.5GHz BJT
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
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SZP-3026Z
SOF-26
SZP-3026Z
DS091202
SZP3026Z*
SZP3026Z-EVB1
ma 529
SZP3026
SOF-26
3.5GHz BJT
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Untitled
Abstract: No abstract text available
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
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Original
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SZP-3026Z
SOF-26
SZP-3026Z
DS110620
SZP3026ZSQ
SZP3026ZSR
SZP3026Z
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600S100JW250X
Abstract: 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
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Original
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SZP-3026Z
SZP-3026Z
SOF-26
DS110620
SZP3026ZSQ
SZP3026ZSR
SZP3026Z
SZP3026Z-EVB1
600S100JW250X
113 marking code transistor ROHM
SZP3026
phemt transistor 30Ghz
MCH185A1R0DK
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Cap 0603 X7R
Abstract: SOF-26 SZP-2026Z recommended land pattern for 0402 cap
Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology
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SZP-2026Z
SOF-26
SZP-2026Z
o026Z"
SZP2026Z
SZP2026Z-EVB1
SZP2026Z-EVB2
DS091202
Cap 0603 X7R
SOF-26
recommended land pattern for 0402 cap
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SZP-2026Z
Abstract: rf transistor 2.5GHz SOF-26 transistor 2.4GHz amplifier schematic
Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology
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SZP-2026Z
SOF-26
SZP-2026Z
SZP-2026Z-EVB1
SZP-2026Z-EVB2
EDS-104611
rf transistor 2.5GHz
SOF-26
transistor 2.4GHz amplifier schematic
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SZP-2026
Abstract: No abstract text available
Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology
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Original
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SZP-2026Z
SOF-26
SZP-2026Z
SZP-2026Z"
DS110620
SZP2026ZSQ
SZP2026ZSR
SZP2026Z
SZP-2026
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Untitled
Abstract: No abstract text available
Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026 P1dB =33.6dBm at 5V RF IN 802.11g 54Mb/s Class AB Performance On-Chip Output Power Detector Input Prematched to ~5
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RFPA3026
RFPA3026
54Mb/s
26dBm
570mA
27dBm
513mA
DS120110
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PDF
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