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    MG100Q2YK1 Search Results

    MG100Q2YK1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG100Q2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100Q2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG100Q2YK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG100Q2YK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG100Q2YK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1200V, 100A Scan PDF

    MG100Q2YK1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: { d is c r e t e / opto } |~ 9097250 TOSHIBA TO SH IBA DISCRETE/OPTO 90D SEMICONDUCTOR 16086 D T ~33'3£ TOSHIBA GTR MODULE MG100Q2YK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE H IGH POWER S W I T C H I N G APPLICATIONS. M O T O R C ONTROL APPLICATIONS.


    OCR Scan     		MG100Q2YK1 MG100Q2YK1â PDF

    MAX2400

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100Q2YK1 HIGH POWER SWITCHING APPLICATIONS, MOTOR CONTROL APPLICATIONS. Unit in ram FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.


    OCR Scan     		MG100Q2YK1 MAX2400 PDF

    MG100Q2YK1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100Q2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current: Gain: hFE=100 Min. (Ic=100A)


    OCR Scan     		MG100Q2YK1 El/08 MG100Q2YK1 PDF

    MG150H2YL1

    Abstract: MG100H2CK1 MG200H2CK1 MG100H2CL1 MG100Q2YK1 MG100G2CL1 MG150G2YL1 MG100G2YL1 MG80S2YK1 MG75M2CK1
    Text: - 220 ÍN P N . 2 Ê ^ lt f ^ SI B l E li ¿B2 B. V c BO V CE X SUS) -k V EBO (T . 'Ê. c CP B F ( lu s ) (V ) (V ) E 1/C 2 B2 E2¿ (V ) (A ) (A ) (A ) (A ) py Pc = 2 5 °C ) T , T ., (la s ) (a n (A ) (W ) C C ). (°C ) V „ , Te % CBO (m A ) Ci£2)


    OCR Scan     		H-101 MG150H2YL1 MG100H2CK1 MG200H2CK1 MG100H2CL1 MG100Q2YK1 MG100G2CL1 MG150G2YL1 MG100G2YL1 MG80S2YK1 MG75M2CK1 PDF

    30U6P42

    Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
    Text: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which


    OCR Scan     		24VDC 110VAC 100kHz TA76524P 2SK358 100VAC MG15N6EK1 MG25M2YK1X3 30U6P42 MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z PDF

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 PDF

    MG25M1BK1

    Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
    Text: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400


    OCR Scan     		MG30M1BN1 MG50M1BK1 MG75M1BK1 MG25M1BK1 MG200M1FK1 MG200M1UK1 MG300M1FK1 MG300M1UK1 MG300M1UK2 MG25M2CK2 MG25M1BK1 MG30M1BN1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100 PDF

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 PDF

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1 PDF

    MG150H2YL1

    Abstract: MG100H2CL1 MG200H2CK1 MG80S2YK1 MG100G2YL1 MG150G2YL1 mg100h2ck1 MG150M2YK1 MG100G2CL1 MG75M2CK1
    Text: -221 sg - 2 p V cc * * 9 & U a # l= 0 . 5 * 4 • y ^ > r ^ r i * E n « t y p . « 0 u z . T . tâ fo m Œ (V X 'f I c il + I B on ? • 3 V y 91ï ï y j t - V m & iK i u s) I B V BE V cE x i = 2 5°C ) I b; V cc R i , t . (V ) I F ( u s) % 1 p V be


    OCR Scan     		-25-C) 2-80B1A MG75M2CK1 2-108A2A MG75M2YK1 KG75Q2YK1 H-101 MG150H2YL1 MG100H2CL1 MG200H2CK1 MG80S2YK1 MG100G2YL1 MG150G2YL1 mg100h2ck1 MG150M2YK1 MG100G2CL1 MG75M2CK1 PDF

    MG200J2YS21

    Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
    Text: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9


    OCR Scan     		MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG100M2YK1 MG200J2YS21 MG30J6ES1 MG400J1US11 MG75J2YS40 MG400Q1US11 MG150J2YS40 mig25Q901 MG75J2YS45 PDF

    T3D 54 DIODE

    Abstract: Diode T3D 54 T3D 81 DIODE T3D DIODE T3D 83 DIODE diode T3D 25 Diode T3D 41 CIRCUIT T3D 28 diode MG300M1UK1 T3D 18 diode
    Text: WEST CODE S EMI C OND U CT O RS WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single


    OCR Scan     		PDF

    MG75J2YS40

    Abstract: MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 MG100j2YS40 20L6P44 MG150J2YS45 MG100J6ES40 10L6P44
    Text: UL Approved Devices Key to devices not listed in Recognized Components Directory, 1993 Edition ‘ Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Secti UL FILE #E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40


    OCR Scan     		E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG75J2YS40 MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 20L6P44 MG150J2YS45 10L6P44 PDF

    MG100M2YK1

    Abstract: TRANSISTOR D 880 MG200M1UK1 MG75G2YL1 MG75M2YK1 MG15N2YK1 MG25M2YK1 MG25N2YK1 Westcode MG50G2YL1
    Text: WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly simplify mounting. A wide variety of devices


    OCR Scan     		PDF