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    MG200M1UK1 Search Results

    MG200M1UK1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG200M1UK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200M1UK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200M1UK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG200M1UK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG200M1UK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1000V, 200A Scan PDF

    MG200M1UK1 Datasheets Context Search

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    CSG3001-18A04

    Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
    Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power


    Original     		PDF 400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04

    MG200M1UK1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200M1UK1 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES: . The Collector is IsoLated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hpg=100 Min. (Ic=200A’ . Low Saturation Voltage


    OCR Scan     		PDF MG200M1UK1 MG200M1UK1

    Untitled

    Abstract: No abstract text available
    Text: G TR MODULE SILICON NPN TRIPLE DIFFUSED T Y P E MG200M1UK1 HIGH POWER SWITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hFjr=100 Min. (Ic=200A'


    OCR Scan     		PDF MG200M1UK1

    MG25M1BK1

    Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
    Text: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400


    OCR Scan     		PDF MG30M1BN1 MG50M1BK1 MG75M1BK1 MG25M1BK1 MG200M1FK1 MG200M1UK1 MG300M1FK1 MG300M1UK1 MG300M1UK2 MG25M2CK2 MG25M1BK1 MG30M1BN1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100

    30U6P42

    Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
    Text: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which


    OCR Scan     		PDF 24VDC 110VAC 100kHz TA76524P 2SK358 100VAC MG15N6EK1 MG25M2YK1X3 30U6P42 MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    Snubber circuit Design

    Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
    Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very


    OCR Scan     		PDF 30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    MG400G1UL1

    Abstract: MG400H1FL1 mg400h1ul1 MG300M1FK1 mg400h1fk1 MG300G1UL1 ku 602 vc MG200M1UK1 MG200Q1UK1 MG300H1UL1
    Text: — 214 — N F S , > t > » « . V - 'l 1f lñ * UK-2 U L _j 0 c 1 1 1 K ïW O BX OE c BX C 1 * & V CBO S V CE X (SUS) V bbo M 1c g fe I CP (T . i B I p (la s ) (V ) (V ) (V ) (A ) (A ) (A ) (A ) I FU Pc (In s ) (a i) (A ) (W ) = 2 5 °C ) T , T , v , 10


    OCR Scan     		PDF H-101 MG400G1UL1 MG400H1FL1 mg400h1ul1 MG300M1FK1 mg400h1fk1 MG300G1UL1 ku 602 vc MG200M1UK1 MG200Q1UK1 MG300H1UL1

    MG200J2YS21

    Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
    Text: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9


    OCR Scan     		PDF MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG100M2YK1 MG200J2YS21 MG30J6ES1 MG400J1US11 MG75J2YS40 MG400Q1US11 MG150J2YS40 mig25Q901 MG75J2YS45

    MG200M1UK1

    Abstract: mg200h1uk1 diode sy 104 TOSHIBA "DIODE MODULE" 160 toshiba free wheeling diode npn 1000V 100a NPN VCE0 1000V NPN Transistor VCEO 1000V Toshiba 77 8A DIODE sy 320 diode
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA TG DISCRETE/OPTO DEjimTSSD 90 D SEMICONDUCTOR 16098 DDltiDTfl D"7“—2 3 - 3* TOSHIBA GTR MODULE M G 2 0 0 M 1 U K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE H IGH POWER S W I T C H I N G A P PLICATIONS.


    OCR Scan     		PDF MG200M1UK1 MG200M1UK1 mg200h1uk1 diode sy 104 TOSHIBA "DIODE MODULE" 160 toshiba free wheeling diode npn 1000V 100a NPN VCE0 1000V NPN Transistor VCEO 1000V Toshiba 77 8A DIODE sy 320 diode

    T3D 54 DIODE

    Abstract: Diode T3D 54 T3D 81 DIODE T3D DIODE T3D 83 DIODE diode T3D 25 Diode T3D 41 CIRCUIT T3D 28 diode MG300M1UK1 T3D 18 diode
    Text: WEST CODE S EMI C OND U CT O RS WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single


    OCR Scan     		PDF

    MG75J2YS40

    Abstract: MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 MG100j2YS40 20L6P44 MG150J2YS45 MG100J6ES40 10L6P44
    Text: UL Approved Devices Key to devices not listed in Recognized Components Directory, 1993 Edition ‘ Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Secti UL FILE #E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40


    OCR Scan     		PDF E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG75J2YS40 MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 20L6P44 MG150J2YS45 10L6P44