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    MG300Q1 Price and Stock

    Toshiba America Electronic Components MG300Q1US42

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MG300Q1US42 175 1
    • 1 $120
    • 10 $110.76
    • 100 $98.4
    • 1000 $98.4
    • 10000 $98.4
    		Buy Now
    Quest Components MG300Q1US42 140
    • 1 $130
    • 10 $130
    • 100 $105
    • 1000 $105
    • 10000 $105
    		Buy Now

    Toshiba America Electronic Components MG300Q1US41

    IGBT Power Module Transistor, Independent
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MG300Q1US41 1
    • 1 -
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    MG300Q1 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG300Q1UK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1UK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1UK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG300Q1UK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG300Q1UK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1200V, 300A Scan PDF
    MG300Q1US1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US11 Toshiba V(ces): 1200V V(ges): ±20V 2000W insulated gate bipolar transistor. For high power switching and motor control applications Scan PDF
    MG300Q1US2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US21 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US21 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US41 Toshiba TRANS IGBT MODULE N-CH 1200V 300A 4(2-109A4A) Original PDF
    MG300Q1US41 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG300Q1US41 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG300Q1US41 Toshiba GTR Module - Silicon N-Channel IGBT Scan PDF
    MG300Q1US41(AC:G) Toshiba TRANS IGBT MODULE N-CH 1200V 300A 4(2-109A4A) Original PDF
    MG300Q1US51 Toshiba TRANS IGBT MODULE N-CH 1200V 400A 4(2-109F1A) Original PDF

    MG300Q1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG300Q1US41

    Abstract: No abstract text available
    Text: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.)


    Original     		PDF MG300Q1US41 2-109A4A MG300Q1US41

    Untitled

    Abstract: No abstract text available
    Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)


    Original     		PDF MG300Q1US51 2-109F1A

    MG300Q1US41

    Abstract: No abstract text available
    Text: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) l Low saturation voltage : VCE(sat) = 4.0V (Max.)


    Original     		PDF MG300Q1US41 2-109A4A MG300Q1US41

    mg300* toshiba

    Abstract: MG300Q1US51
    Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm 2–M4 2–M6 4– 6.6 0.3 Low saturation voltage : VCE sat = 3.6V (Max.) E G E C 24 0.3 20 0.3 29 0.3 Enhancement-mode


    Original     		PDF MG300Q1US51 2-109F1A mg300* toshiba MG300Q1US51

    MG300Q1US51

    Abstract: 80c400
    Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		PDF MG300Q1US51 2-109F1A 2500transportation MG300Q1US51 80c400

    Untitled

    Abstract: No abstract text available
    Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		PDF MG300Q1US51 2-109F1A

    300Q1US41

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V


    OCR Scan     		PDF MG300Q1US41 00A/ius 300Q1US41

    MG300Q1US51

    Abstract: MG300Q1
    Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 MG300Q1 2-109F1A MG300Q1US51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 Q Q n 1 u S 51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage • V c e (sat) —3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US51 TO SH IBA GTR M O D U L E M G 3 SILICON N C H A N N EL IGBT Q 1 U S 5 1 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H ig h sp eed : tf= 0 .3 /Æ Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q1US51 1256C VCE25i

    mg30

    Abstract: MG300Q1US51 P channel 600v 300a IGBT
    Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 MG300Q1 2-109F1A mg30 MG300Q1US51 P channel 600v 300a IGBT

    Untitled

    Abstract: No abstract text available
    Text: TO TOSHIBA {DISCRETE/OPTO} DE I SOTTESO DOItiID ? | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D T “3 3 - 3 S 90D 16110 SEM ICO N DU CTO R TOSHIBA GTR MODULE MG300Q1UK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF MG300Q1UK1

    MG25M1BK1

    Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
    Text: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400


    OCR Scan     		PDF MG30M1BN1 MG50M1BK1 MG75M1BK1 MG25M1BK1 MG200M1FK1 MG200M1UK1 MG300M1FK1 MG300M1UK1 MG300M1UK2 MG25M2CK2 MG25M1BK1 MG30M1BN1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G300Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 G300Q TjS125

    MG300Q1US41

    Abstract: S60C
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MO DULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US 4 1 HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5/^s (Max.) Low Saturation Voltage : V c E (sa t) = 4.0V


    OCR Scan     		PDF MG300Q1US41 2-109A4A MG300Q1US41 S60C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5,«s Max. trr = O . o / ' S (Max.) Low Saturation Voltage : V Q E(sat) = 4.0V


    OCR Scan     		PDF MG300Q1US41

    Untitled

    Abstract: No abstract text available
    Text: MG300Q1US41 HIGH P O W E R SW IT C H IN G A PPLIC A TIO N S. M O TO R C O NTRO L A PPLIC A TIO N S. • High I n p u l Impedance • High Speed : tf= 0 .5 //s M a x . • Low S a tu r a tio n Voltage : V £ E ( s a t) = 4 . 0 V t rr = 0.5//s(Max.) (Max.)


    OCR Scan     		PDF MG300Q1US41

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 Q Q n 1 il <; a. 1 M r • ■ HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5//s Max. trr = 0.5//s (Max.) • Low Saturation Voltage : V ç E (ç a t) = 4.0V


    OCR Scan     		PDF MG300Q1US41 JG300Q1US41

    MG300Q1UK1

    Abstract: MG300Q1UK1 equivalent
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG300Q1UK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. TENTATIVE DATA FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain : hp£=100 Min. (Ic=300A)


    OCR Scan     		PDF MG300Q1UK1 MG300Q1UK1 MG300Q1UK1 equivalent

    MG300Q1US1

    Abstract: IGBT MG300Q1US1 mg300q1us
    Text: GTR MODULL SILICON N CHANNEL IGBT MG300Q1US1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance ■ High Speed: tf=0. 5jJs Max. trr=0.5ys(Max.) • Low Saturation Voltage: Vc]?(sat)=4 .0V(Max. ) • Enhancement-Mode • The Electrodes are Isolated from Case.


    OCR Scan     		PDF MG300Q1US1 MG300Q1US1 IGBT MG300Q1US1 mg300q1us

    Untitled

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. MG300Q1UK1 TENTATIVE DATA Unit in mm 12 ¿0.5 FEATURES: 20±0.5 . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain : hpg=100 Min. (Ic=300A)


    OCR Scan     		PDF MG300Q1UK1 3-109A1A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V


    OCR Scan     		PDF MG300Q1US41 Colleetor-Emi200 00A/ius

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0.3/*s Max. @Induetive Load • Low Saturation Voltage . T


    OCR Scan     		PDF MG300Q1US51

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1