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    MG50J Price and Stock

    Toshiba America Electronic Components MG50J2YS91

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    Bristol Electronics MG50J2YS91 66 1
    • 1 $72
    • 10 $69.228
    • 100 $59.04
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    Quest Components MG50J2YS91 52
    • 1 $78
    • 10 $78
    • 100 $69
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    Toshiba America Electronic Components MG50J2YS9

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    Bristol Electronics MG50J2YS9 39 1
    • 1 $72
    • 10 $69.228
    • 100 $60.9264
    • 1000 $60.9264
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    Quest Components MG50J2YS9 31
    • 1 $78
    • 10 $78
    • 100 $69
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    Toshiba America Electronic Components MG50J2YS1

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    Bristol Electronics MG50J2YS1 2 1
    • 1 $72
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    Quest Components MG50J2YS1 1
    • 1 $78
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    Toshiba America Electronic Components MG50J2YS40

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    Bristol Electronics MG50J2YS40 1
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    Quest Components MG50J2YS40 3
    • 1 $156
    • 10 $140.4
    • 100 $140.4
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    MG50J2YS40 1
    • 1 $78
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    MG50J Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG50J1BS11 Toshiba TRANS IGBT MODULE N-CH 600V 50A 3(2-33F2A) Original PDF
    MG50J1BS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50J1BS11 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG50J1ZS40 Toshiba TRANS IGBT MODULE N-CH 600V 50A 5(2-94D2A) Original PDF
    MG50J1ZS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG50J1ZS40 Toshiba N channel IGBT Original PDF
    MG50J1ZS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG50J1ZS50 Toshiba 600V 50A IGBT Chopper Module Scan PDF
    MG50J2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50J2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50J2YS50 Toshiba TRANS IGBT MODULE N-CH 600V 50A 7(2-94D1A) Original PDF
    MG50J2YS50 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG50J2YS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG50J2YS50 Toshiba GTR Module - Silicon N-Channel IGBT Scan PDF
    MG50J2YS50(AC:G) Toshiba TRANS IGBT MODULE N-CH 600V 50A 7GTR MODULE Original PDF
    MG50J2YS9 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50J2YS9 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50J2YS91 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50J2YS91 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50J6EL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    MG50J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG50J2YS50

    Abstract: td 4950
    Text: MG50J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50J2YS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance. Includes a complete half bridge in one package. Enhancement-mode.


    Original     		PDF MG50J2YS50 2-94D1A MG50J2YS50 td 4950

    MG50J2YS50

    Abstract: MG50J2 td 4950 IGBT MG50J2YS50
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG50J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: tf = 0.30µs Max. (IC = 50A) trr = 0.15µs (Max.) (IF = 50A)


    Original     		PDF MG50J2YS50 PW03070796 MG50J2YS50 MG50J2 td 4950 IGBT MG50J2YS50

    MG50J1BS11

    Abstract: No abstract text available
    Text: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG50J1BS11 2-33F2A MG50J1BS11

    050 diode

    Abstract: MG50J1ZS40 2-94D2A
    Text: MG50J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50J1ZS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.35µs Max. trr = 0.15µs (Max.) Low saturation voltage : VCE(sat) = 3.5V (Max.)


    Original     		PDF MG50J1ZS40 2-94D2A 050 diode MG50J1ZS40 2-94D2A

    MG50J2YS50

    Abstract: No abstract text available
    Text: MG50J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance. l Includes a complete half bridge in one package. l Enhancement-mode.


    Original     		PDF MG50J2YS50 2-94D1A MG50J2YS50

    MG50J6ES50

    Abstract: on semiconductor 50-5G
    Text: MG50J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG50J6ES50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed : tf = 0.30µs Max. (IC = 50A)


    Original     		PDF MG50J6ES50 2-94A2A 000707EAA1 MG50J6ES50 on semiconductor 50-5G

    MG50J1ZS40

    Abstract: No abstract text available
    Text: MG50J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50J1ZS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.35µs max trr = 0.15µs (max) l Low saturation voltage : VCE(sat) = 3.5V (max)


    Original     		PDF MG50J1ZS40 2-94D2A MG50J1ZS40

    MG50J1ZS40

    Abstract: No abstract text available
    Text: MG50J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50J1ZS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.35µs max trr = 0.15µs (max) Low saturation voltage : VCE(sat) = 3.5V (max) Enhancement-mode


    Original     		PDF MG50J1ZS40 2-94D2A MG50J1ZS40

    MG50J2YS1

    Abstract: IGBT MG50J2YS1
    Text: GTR MODULE SILICON N CHANNEL IGBT MG50J2YS1 HIGH PO WER S W I T C H I N G APPL I CA TI ON S . M O T O R C ON T RO L A P PL IC A TI ON S. . High Input Impedance . High Speed : t f=0.3 5 / j s Max. trr=0. 25|is(May.) . Low Saturation Voltage : VCE(sat)=4•0V(Max.)


    OCR Scan     		PDF MG50J2YS1 MG50J2YS1 IGBT MG50J2YS1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50J1BS11 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG50J1 BS11 HIGH PO W E R SWITCHING APPLICATIONS. Unit in mm M O TOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/^s M ax. (Ic = 50A) Low Saturation Voltage : VçE(sat) = 2-TV (Max.) (I<2= 50A)


    OCR Scan     		PDF MG50J1BS11 MG50J1 Volta0J1BS11 50//s 100//sii;

    1ZS40

    Abstract: ft05d
    Text: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • High Input Impedance • H ighSpeed • Low Saturation Voltage 2 -FAST-ON-TAB #110 : tf=0.35,«s Max.


    OCR Scan     		PDF MG50J1ZS40 MG50J1 2-94D2A MG50J 1ZS40 1ZS40 ft05d

    P channel 50A IGBT

    Abstract: No abstract text available
    Text: TOSHIBA MG50J6ES50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH P O W E R SWITCHING APPLICATIONS. Unit in mm M O TO R CONTROL APPLICATIONS. • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.


    OCR Scan     		PDF MG50J6ES50 15jus 2-94A2A P channel 50A IGBT

    2-33F1A

    Abstract: MG50J1BS11 253H tcp 8005 CS630
    Text: MG50J1BS11 TOSHIBA MG5 0 J 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= 1.0/^s Max. (I0 = 5OA) Low Saturation Voltage : VCE(sat)= 2.7V (Max.) (I0 = 5OA)


    OCR Scan     		PDF MG50J1BS11 MG50J1 2-33F1A 2-33F1A MG50J1BS11 253H tcp 8005 CS630

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • 2 -FAST-ON-TAB #110 High Input Impedance H ighSpeed : tf=0.35,«s Max. trr = 0.15^8 (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG50J1ZS40 MG50J1 2-94D2A MG50J 1ZS40

    td 4950

    Abstract: MG50J6ES50
    Text: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • 4-0 5.5 ± 0.3 7-M4 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.


    OCR Scan     		PDF MG50J6ES50 G50J6ES50 2-94A2A 961001EAA2 td 4950 MG50J6ES50

    mg50j2ys40

    Abstract: IGBT MG50J2YS40 TOSHIBA IGBT mg50 toshiba MG50 YS40 2YS40 ALY TRANSISTOR MG50 pmp 4000 transistor ALY
    Text: TOSHIBA GTR MODULE SEMICONDUCTOR TOSHIBA TECHNICAL M G 50J 2YS40 DATA SILICON N CHANNEL IGBT MG50J2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • l!X 3 - M5 High Input Impedance Highspeed : tf—0.35//S(Max.)


    OCR Scan     		PDF 2YS40 MG50J2YS40) 35//S 2-94D1A MG50J2YS40 MG50J2YS40 2VS40) IGBT MG50J2YS40 TOSHIBA IGBT mg50 toshiba MG50 YS40 2YS40 ALY TRANSISTOR MG50 pmp 4000 transistor ALY

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package.


    OCR Scan     		PDF MG50J6ES50 2-94A2A 961001EAA2 100//S*

    TOSHIBA IGBT

    Abstract: No abstract text available
    Text: TOSHIBA MG50J1BS11 TOSHIBA GTR MODULE M SILICON N CHANNEL IGBT r: ^ n 1 1 R <; 1 1 HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed tf—1 . 0 / ' S Max. (Içj —5 0 A) Low Saturation Voltage : V cE(sat) = 2*7V (Max.) (Iq = 50A)


    OCR Scan     		PDF MG50J1BS11 TOSHIBA IGBT

    MG50J2YS50

    Abstract: No abstract text available
    Text: MG50J2YS50 HIGH PO W ER SW IT C H IN G A PPLICA TIO N S. U nit in mm M O T O R C O N T R O L APPLICA TIO N S. 4-FAST - ON-TAB *110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One Package. •


    OCR Scan     		PDF MG50J2YS50 15//s 2-94D1A MG50J2YS50

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 1 1 0 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG50J2YS50 2-94D1A 100//S*

    MG50J6EL1

    Abstract: darlington NPN 600V 50a transistor LF50A hFE-80
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50J6EL1 HIGH POWER SWITCHING APPLICATIONS. TENTATIVE Unit in mm MOTOR CONTROL APPLICATIONS. The Collector is Isolated from Case. 6 Darlington Transistors are Built-in to 1 Package. With Cuilt-in Free Wheeling Diodes.


    OCR Scan     		PDF MG50J6EL1 MG50J6EL1 darlington NPN 600V 50a transistor LF50A hFE-80

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50J1ZS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G 5 0 J 1 ZS40 H IGH P O W E R SW IT C H IN G APPLICATIO N S. U n it in mm M O T O R C O N T R O L APPLICATIO N S. B2 2 -FAST-O N -TAB 2- • H igh In p u t Impedance • H ig h s p e e d


    OCR Scan     		PDF MG50J1ZS40 35//S 15/iS

    MG50J6ES50

    Abstract: No abstract text available
    Text: MG50J6ES50 U n it in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package. • Enhancement-Mode. •


    OCR Scan     		PDF MG50J6ES50 15/js MG50J6ES50

    Untitled

    Abstract: No abstract text available
    Text: MG50J1ZS40 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S . • • • H igh In p ut Im pedance H igh Speed : tf= 0.35//s M ax. trr = 0.15//S (Max.) Low S aturation Voltage • • Enhancem ent-M ode


    OCR Scan     		PDF MG50J1ZS40 35//s 15//S