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    United Chemi-Con Inc ESMG500ELL221MJC5S

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    United Chemi-Con Inc EKMG500ELL4R7ME11D

    CAP ALUM 4.7UF 20% 50V RADIAL TH
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    United Chemi-Con Inc ESMG500ELL4R7ME11D

    CAP ALUM 4.7UF 20% 50V RADIAL TH
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    United Chemi-Con Inc EKMG500ELL220ME11D

    CAP ALUM 22UF 20% 50V RADIAL TH
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    United Chemi-Con Inc EKMG500ELL3R3ME11D

    CAP ALUM 3.3UF 20% 50V RADIAL TH
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    MG50 Datasheets (186)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG50 Riedon Film Resistors Original PDF
    MG50 Willow Technologies Film Resistors Original PDF
    MG50 Vishay Intertechnology Bushing Mount Wirewound Controls Scan PDF
    MG500 FLIR Uncategorized - Miscellaneous - HIGH VOLTAGE INSULATION TESTER Original PDF
    MG-5000-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 5000PSI LCD Original PDF
    MG-5000-A-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 5000PSI LCD Original PDF
    MG-5000-B-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 5000 PSI 1/8 NPT 9V Original PDF
    MG-5000-B-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 5000 PSI 4-20 MA 1/8 NPT Original PDF
    MG-500-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 500PSI LCD Original PDF
    MG-500-A-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 500PSI LCD Original PDF
    MG-500-B-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 500 PSI 4-20 MA 1/8 NPT Original PDF
    MG500-NIST FLIR Uncategorized - Miscellaneous - HIGH VOLTAGE INSULATION TESTER W Original PDF
    MG500Q1US1 Toshiba GTR Module Silicon N Channel IGBT Original PDF
    MG500Q1US1 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG500Q1US11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG500Q1US21 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG500Q1US41 Toshiba 1200V 500A Advanced 2nd Generation High Speed IGBT Scan PDF
    MG500QUS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG500QUS2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG-5020JE EPSON Logic and Timing, 32kHz, PLL, Oscillator Original PDF
    ...

    MG50 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MG50J2YS50

    Abstract: td 4950
    Text: MG50J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50J2YS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance. Includes a complete half bridge in one package. Enhancement-mode.


    Original
    MG50J2YS50 2-94D1A MG50J2YS50 td 4950 PDF

    3 phase ac sinewave phase inverter single ic

    Abstract: U5J diode
    Text: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One


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    MG50Q2YS40 2-94D1A 3 phase ac sinewave phase inverter single ic U5J diode PDF

    MG50G2CL3

    Abstract: Mg50G2cl mg50g2
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)


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    MG50G2CL3 MG50G2CL3 Mg50G2cl mg50g2 PDF

    MG50H2YS1

    Abstract: No abstract text available
    Text: MG50H2YS1 GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance : tf= 1 . 0/is Max. . High Speed trr = 0 . 5 y s ( M a x .) . Enhancement-Mode . Includes a Complete Half Bridge in one


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    MG50H2YS1 MG50H2YS1 PDF

    G50Q2YS50

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q2YS50A TEN TATIVE TO S H IB A G TR M O D U LE SILICO N IM C H A N N EL IG B T MG50Q2YS50A HIGH PO W ER SW ITC H IN G A P P LIC A TIO N S . M O TO R C O N TR O L A P P LIC A TIO N S . High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load


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    MG50Q2YS50A G50Q2YS50A G50Q2YS50 PDF

    MG50J2YS1

    Abstract: IGBT MG50J2YS1
    Text: GTR MODULE SILICON N CHANNEL IGBT MG50J2YS1 HIGH PO WER S W I T C H I N G APPL I CA TI ON S . M O T O R C ON T RO L A P PL IC A TI ON S. . High Input Impedance . High Speed : t f=0.3 5 / j s Max. trr=0. 25|is(May.) . Low Saturation Voltage : VCE(sat)=4•0V(Max.)


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    MG50J2YS1 MG50J2YS1 IGBT MG50J2YS1 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


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    MG50Q6ES40 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50J1BS11 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG50J1 BS11 HIGH PO W E R SWITCHING APPLICATIONS. Unit in mm M O TOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/^s M ax. (Ic = 50A) Low Saturation Voltage : VçE(sat) = 2-TV (Max.) (I<2= 50A)


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    MG50J1BS11 MG50J1 Volta0J1BS11 50//s 100//sii; PDF

    MG30H1BL1

    Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
    Text: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL


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    2SD1314* MG50G1BL3 MG30G18L4 MG15H1AL1 S3885* MG30H1BL1 MG100G1AL3 MG100G1FL1 MG150H1FL1 MG200H1FL1A S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 A1015 MG50G6EL9 MG150H2YL1 PDF

    MG50G1BL2

    Abstract: mg50g1b mg50g1bl MG50G1
    Text: lb ^FlìDìvaso DQOflsm i TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO MG50G1BL2 _ 5bC 08214 SILICON NPN TRIPLE D IFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS. Unit in mm FEATURES: . The Collector is Isolated from Ground,


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    MG50G1BL2 082L6 MG50G1BL2 mg50g1b mg50g1bl MG50G1 PDF

    1ZS40

    Abstract: ft05d
    Text: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • High Input Impedance • H ighSpeed • Low Saturation Voltage 2 -FAST-ON-TAB #110 : tf=0.35,«s Max.


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    MG50J1ZS40 MG50J1 2-94D2A MG50J 1ZS40 1ZS40 ft05d PDF

    P channel 50A IGBT

    Abstract: No abstract text available
    Text: TOSHIBA MG50J6ES50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH P O W E R SWITCHING APPLICATIONS. Unit in mm M O TO R CONTROL APPLICATIONS. • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.


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    MG50J6ES50 15jus 2-94A2A P channel 50A IGBT PDF

    CM631

    Abstract: No abstract text available
    Text: MG50N2CK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain


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    MG50N2CK1 CM631 PDF

    2-33F1A

    Abstract: MG50J1BS11 253H tcp 8005 CS630
    Text: MG50J1BS11 TOSHIBA MG5 0 J 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= 1.0/^s Max. (I0 = 5OA) Low Saturation Voltage : VCE(sat)= 2.7V (Max.) (I0 = 5OA)


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    MG50J1BS11 MG50J1 2-33F1A 2-33F1A MG50J1BS11 253H tcp 8005 CS630 PDF

    MG50D2YM1

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPT0> TD 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR DE~| TGTT E S G □Dlb4Eti 1 90D D T -3 9 -5 7 16426 TOSHIBA GTR MODULE MG50D2YM1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. flOTOR CONTROL APPLICATIONS.


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    MG50D2YM1 085ii 31/C2) MG50D2YM1-4 MG50D2YM1-5 T1A20 MG50D2YM1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO TOSHIBA {DISCRETE/OPTO} 9097250 T O S H I B A <DISCRETE/OPTO> SEMICONDUCTOR ToJhtht D E | T 0 T 7 E S 0 0Dlti3SS 90D 16325 DT-33-35" -TOSHIBA G-TR MODULE MG50M1BK 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    DT-33-35" MG50M1BK MG50M1BK1 EGA-MG50M1BK1-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: "TD TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA Difjj TtHTSSO D01ti070 D 90D 16070 SEMICONDUCTOR DJ-33-3S TOSHIBA GTR MODULE TECHNICAL DATA MG50Q2YK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm


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    D01ti070 DJ-33-3S MG50Q2YK1 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • 2 -FAST-ON-TAB #110 High Input Impedance H ighSpeed : tf=0.35,«s Max. trr = 0.15^8 (Max.) Low Saturation Voltage


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    MG50J1ZS40 MG50J1 2-94D2A MG50J 1ZS40 PDF

    igbt toshiba mg

    Abstract: MG50J1ZS40 ZS40
    Text: TOSHIBA MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • • 2 -FAST-O N-TAB # 1 1 0 High Input Impedance High Speed : tf= 0.35/^s Max. trr = 0.15,«s (Max.)


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    MG50J1ZS40 MG50J1 2-94D2A RG-51f2 igbt toshiba mg MG50J1ZS40 ZS40 PDF

    td 4950

    Abstract: MG50J6ES50
    Text: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • 4-0 5.5 ± 0.3 7-M4 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.


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    MG50J6ES50 G50J6ES50 2-94A2A 961001EAA2 td 4950 MG50J6ES50 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG50Q1ZS50 MG50Q1ZS50 TO SHIBA GTR M O DU LE SILICON N C HANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Inductive Load Low Saturation Voltage


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    MG50Q1ZS50 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Inductive Load • Low Saturation Voltage : v C E(sat) = 3-6Y (Max.)


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    MG50Q2YS50A 961001EAA1 PDF

    mg50j2ys40

    Abstract: IGBT MG50J2YS40 TOSHIBA IGBT mg50 toshiba MG50 YS40 2YS40 ALY TRANSISTOR MG50 pmp 4000 transistor ALY
    Text: TOSHIBA GTR MODULE SEMICONDUCTOR TOSHIBA TECHNICAL M G 50J 2YS40 DATA SILICON N CHANNEL IGBT MG50J2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • l!X 3 - M5 High Input Impedance Highspeed : tf—0.35//S(Max.)


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    2YS40 MG50J2YS40) 35//S 2-94D1A MG50J2YS40 MG50J2YS40 2VS40) IGBT MG50J2YS40 TOSHIBA IGBT mg50 toshiba MG50 YS40 2YS40 ALY TRANSISTOR MG50 pmp 4000 transistor ALY PDF

    IRF 24N

    Abstract: MG50Q2YS50A 294D
    Text: TOSHIBA MG50Q2YS50A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG50Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load • Low Saturation Voltage : v CE(sat) = 3-e v (Max.)


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    MG50Q2YS50A 2-94D4A 961001EAA1 10//s IRF 24N MG50Q2YS50A 294D PDF