MG50M2CK2 Search Results

MG50M2CK2 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG50M2CK2		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF
MG50M2CK2		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF
MG50M2CK2		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
MG50M2CK2		Unknown	Power and Industrial Semiconductors Data Book		Scan	PDF

MG50M2CK2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA' {DISCRETE/OPTO} 9097250 TOSHIBA ¿ f o iiu h a TO DISCRETE/OPTO DE I TCHTSSO ODlbBET 3 90D SEMICONDUCTOR 16329 DT-33-3^ TOSHIBA CTR MODULE 'MG50M2CK2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.	OCR Scan	DT-33-3^ MG50M2CK2 Dr-33-3S	PDF
MG50M2CK2 Abstract: No abstract text available Text: MG50M2CK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Ioslation from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hfE=100 Min. (Ic=50A)	OCR Scan	MG50M2CK2 MG50M2CK2	PDF
j2y transistor Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,	OCR Scan	O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497	PDF
Snubber circuit Design Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac teristics are closely related each other and cannot be considered independently are further, very	OCR Scan	30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor	PDF
MG25M1BK1 Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100 Text: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400	OCR Scan	MG30M1BN1 MG50M1BK1 MG75M1BK1 MG25M1BK1 MG200M1FK1 MG200M1UK1 MG300M1FK1 MG300M1UK1 MG300M1UK2 MG25M2CK2 MG25M1BK1 MG30M1BN1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100	PDF
mg15g1al3 Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673	OCR Scan	2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115	PDF
MG30H1BL1 Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1 Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX	OCR Scan	00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1	PDF