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    MGFC36 Price and Stock

    Abracon Corporation AMPMGFC-3.6864T3

    MEMS Crystal Oscillator 3.6864MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGFC-3.6864T3)
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    Avnet Americas AMPMGFC-3.6864T3 Reel 3,000
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    Abracon Corporation AMPMGFC-36.8640T

    MEMS Crystal Oscillator 36.864MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGFC-36.8640T)
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    Avnet Americas AMPMGFC-36.8640T Reel 1,000
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    Mouser Electronics AMPMGFC-36.8640T
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    Avnet Abacus AMPMGFC-36.8640T 113 Weeks 1,000
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    Abracon Corporation AMPMGFC-36.0000T3

    MEMS Crystal Oscillator 36MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGFC-36.0000T3)
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    Avnet Americas AMPMGFC-36.0000T3 Reel 3,000
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    Mouser Electronics AMPMGFC-36.0000T3
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    Avnet Abacus AMPMGFC-36.0000T3 113 Weeks 3,000
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    Abracon Corporation AMPMGFC-36.0000T

    MEMS Crystal Oscillator 36MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGFC-36.0000T)
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    Avnet Americas AMPMGFC-36.0000T Reel 1,000
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    Mouser Electronics AMPMGFC-36.0000T
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    Avnet Abacus AMPMGFC-36.0000T 113 Weeks 1,000
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    Abracon Corporation AMPMGFC-36.8640T3

    MEMS Crystal Oscillator 36.864MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGFC-36.8640T3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMGFC-36.8640T3 Reel 3,000
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    Mouser Electronics AMPMGFC-36.8640T3
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    Avnet Abacus AMPMGFC-36.8640T3 113 Weeks 3,000
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    MGFC36 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC36C3742A Mitsubishi 3.7-4.2GHz band 4W internally matched GaAs fet Scan PDF
    MGFC36V3436 Mitsubishi 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V3436 Mitsubishi 3.4 - 3.6 GHz Band 4 W Internally Matched GaAs FET Original PDF
    MGFC36V3436 Mitsubishi 3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V3742 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC36V3742 Unknown FET Data Book Scan PDF
    MGFC36V3742A Mitsubishi 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V3742A Mitsubishi 3.7-4.2 GHz BAND 4W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC36V4450 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC36V4450 Unknown FET Data Book Scan PDF
    MGFC36V4450A Mitsubishi 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V4450A Mitsubishi FET, ID 3.75 A Scan PDF
    MGFC36V5258 Mitsubishi 5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V5258 Mitsubishi 5.2-5.8 GHz BAND 4W Internally Matched GaAs FET Scan PDF
    MGFC36V5258 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC36V5258 Unknown FET Data Book Scan PDF
    MGFC36V5867 Mitsubishi 5.8 ~ 6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V5964 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC36V5964 Unknown FET Data Book Scan PDF
    MGFC36V5964A Mitsubishi 5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFC36 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFC36V6472A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V6472A 6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.


    Original
    PDF MGFC36V6472A MGFC36V6472A 25dBm 10MHz June/2004

    MGFC36V4450A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V4450A MGFC36V4450A 25dBm 10MHz

    MGFC36V4450A

    Abstract: MGFC36V4450
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V4450A MGFC36V4450A 25dBm 10MHz June/2004 MGFC36V4450

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.8 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V5258 MGFC36V5258

    MGFC36V3742A

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V3742A 3.7 – 4.2 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V3742A MGFC36V3742A -45dBc 25dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V7177A 7.1 – 7.7 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V7177A MGFC36V7177A -45dBc 25dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V7785A 7.7 – 8.5 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V7785A MGFC36V7785A -45dBc 25dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V5964A 5.9 -6.4 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V5964A MGFC36V5964A -45dBc 25dBm

    MGFC36V7177A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V7177A MGFC36V7177A 25dBm 10MHz June/2004

    MGFC36V3742A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V3742A MGFC36V3742A 25dBm 10MHz June/2004

    Mitsubishi

    Abstract: MGFC36V5258 mitsubishi electric 5.8GHz
    Text: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V5258 5.2 ~ 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004


    Original
    PDF June/2004 MGFC36V5258 Mitsubishi MGFC36V5258 mitsubishi electric 5.8GHz

    MGFC36V3742A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V3742A MGFC36V3742A 25dBm 10MHz

    MGFC36V3436

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V3436 MGFC36V3436 25dBm Oct-03

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V4450A 4.4 – 5.0 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V4450A MGFC36V4450A -45dBc 25dBm

    ID11

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V4450A 4.4 – 5.0 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V4450A MGFC36V4450A -45dBc 25dBm ID11

    12api

    Abstract: 251C MGFC36V5964A
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically


    OCR Scan
    PDF FC36V5964A MGFC36V5964A 45dBc ltem-01 10MHz" 12api 251C

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI S EM IC O N D U CTO R <G aA s FET> MGFC36V7177 iro d u c t » o n p\an fo r P dicontinue 7 . 1 - 7 . 7 GHz BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 7 1 7 7 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.1 ~ 7.7


    OCR Scan
    PDF MGFC36V7177

    IM335

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR \GaAs FET/ MGFC36V7177A 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G FC 36V7177A is an internally O U T L IN E D R A W IN G impedance-matched GaAs power FET especially designed fo r use in 7.1 ~ 7.7G H z


    OCR Scan
    PDF MGFC36V7177A 36V7177A IM335

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7177A -Shto 1,0 „ata«'«” S O IT .« ti a r ‘ . v.rni» are 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched Unit : millimeters (inches)


    OCR Scan
    PDF MGFC36V7177A MGFC36V7177A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A P R E L » 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The


    OCR Scan
    PDF MGFC36V5964A MGFC36V5964A 96CTYP) 45dBc 10MHz'

    FET TH 469

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET M G FC36V3742A ai ThrS i>ä art S~b' 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched Unit : millimeters (inches) GaAs power FET especially designed for use in 3.7~4.2GHz


    OCR Scan
    PDF FC36V3742A MGFC36V3742A 45d8c FET TH 469

    MGFC36V7785A

    Abstract: fet 30 f 124
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A * nfflSU^e ' 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The


    OCR Scan
    PDF FC36V7785A MGFC36V7785A 45dBc ltem-01 ltem-51 fet 30 f 124

    mgfc30

    Abstract: MGFC39V5964A
    Text: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10


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    PDF MGFC36V3742 FC36V3742A GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 mgfc30 MGFC39V5964A

    MGFC36V6471

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> «« prod^0" MGFC36V6471 6 .4 ~ 7 .2 G H z BAND 4 W INTERNA LLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 6 4 7 1 is an internally impedance-matched GaAs power F E T especially designed fo r use in 6 .4 ~ 7 .2 G H z band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan
    PDF MGFC36V6471 MGFC36V6471