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    MGY25 Search Results

    MGY25 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGY25N120 Motorola Bipolar Transistor, Insulated Gate Bipolar Transistor N-channel Enhancement Mode Silicon Gate Original PDF
    MGY25N120 Motorola Insulated Gate Bipolar Transistor Original PDF
    MGY25N120 On Semiconductor IGBT Chip, N Channel, 1200V, TO-264, 3-Pin Original PDF
    MGY25N120 On Semiconductor Insulated Gate Bipolar Transistor N-Channel Original PDF
    MGY25N120/D Motorola IGBT IN TO-264 A Original PDF
    MGY25N120/D Motorola IGBT IN TO-264 25 A Original PDF
    MGY25N120D Motorola Bipolar Transistor, Insulated Gate Bipolar Transistor with Anti-ParallelDiodeN-ChannelEnhancement-ModeSiliconGate Original PDF
    MGY25N120D Motorola Insulated Gate Bipolar Transistor with Anti-Parallel Diode Original PDF
    MGY25N120D On Semiconductor IGBT Chip, N Channel, 1200V, TO-264, 3-Pin Original PDF
    MGY25N120D On Semiconductor Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Original PDF
    MGY25N120-D On Semiconductor Insulated Gate Bipolar Transistor N-Channel Enhanc Original PDF
    MGY25N120D/D Motorola IGBT & DIODE IN TO-264 25 A Original PDF
    MGY25N120D/D Motorola IGBT & DIODE IN TO-264 25 A Original PDF
    MGY25N120D-D On Semiconductor Insulated Gate Bipolar Transistor with Anti-Parall Original PDF
    MGY25N120G On Semiconductor IGBT Chip: N Channel: 1200V: TO-264: 3-Pin Original PDF

    MGY25 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MGY25N120D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original     		MGY25N120D/D MGY25N120D MGY25N120D PDF

    MGY25N120D

    Abstract: 340G-02
    Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original     		MGY25N120D/D MGY25N120D MGY25N120D 340G-02 PDF

    MGY25N120

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGY25N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY25N120/D MGY25N120 MGY25N120 PDF

    transistor motorola 236

    Abstract: MGY25N120
    Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY25N120/D MGY25N120 MGY25N120/D* transistor motorola 236 MGY25N120 PDF

    MGY25N120D

    Abstract: No abstract text available
    Text: . - MOTOROLA m~EMlcoNDu~ToR TECHNICAL DATA Advanceinformation DataSheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode MGY25N120D Silicon Gate This high voltage Insulated Gate Bipolar Transistor lGB~ is co-packaged with a


    Original     		MGY25N120D O-264 MGY25N120D PDF

    MGY25N120

    Abstract: 21-1U MVPC
    Text: MOTOROLA SEMICONDUCTOR o TECHNICAL Order this document by MGY25N1201D DATA Product Preview Data Sheet Insulated Gate Bipolar Wansistor N<hannel Enhancement Mode Silicon Gate :<,. ., ~., ~, .,.‘~ i,i ,.-.,~.,.~, k ‘:!,: ,.,.’!:. ~’ ~ ~,<~ \ i.?.,.


    Original     		MGY25N1201D 14W1-2 W2-266W96 2PHXW71W MGY25N1 lllllillllllllllllllllll11lllllllllllllll MGY25N120 21-1U MVPC PDF

    MGY25N120

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		MGY25N120/D MGY25N120 MGY25N120 PDF

    mosfet amp ic

    Abstract: transistor motorola 236 MGY25N120D
    Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original     		MGY25N120D/D MGY25N120D MGY25N120D/D* mosfet amp ic transistor motorola 236 MGY25N120D PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V PDF

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    mgb20n40cl

    Abstract: 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD PDF

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original     		SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120 PDF

    GY25N120

    Abstract: n120 30 igbt
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		MGY25 O-264 GY25N120 0E-05 0E-04 0E-03 0E-02 0E-01 GY25N120 n120 30 igbt PDF

    340G-02

    Abstract: Y25N120 GY25N120 motorola transistor m 237
    Text: MOTOROLA Order this document by MGY25N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet M GY25N120 Insulated G ate Bipolar Transistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage


    OCR Scan     		MGY25N 120/D GY25N120 MGY25N120/D 340G-02 Y25N120 GY25N120 motorola transistor m 237 PDF

    25N120

    Abstract: Y25N120 transistor IR 324 C
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY25N120 In su lated G a te B ip o lar T ran sisto r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is In s u la te d G a te B ip o la r T r a n s is to r IG B T u s e s a n a d v a n c e d


    OCR Scan     		Y25N120 25N120 Y25N120 transistor IR 324 C PDF

    Y25n120d

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G Y 25N 120D In su late d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4


    OCR Scan     		MGY25N120D/D Y25n120d PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGY25N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GY25 N 120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    OCR Scan     		MGY25N 120/D MGY25N120/D PDF

    ignition IGBTS

    Abstract: 05n60 MHPM7B16A120B MHPM7B8A120A MHPM7A P15N MSH860 MGP7N60E
    Text: Chapter Four Data Sheets Table of Contents Page Page Motor Control IGBTs Power Modules MGP4N60E .4-2 MGP7N60E .4-6


    OCR Scan     		MGP4N60E MGP7N60E MGP11N60E MGP14N60E MGP21N60E MGP11N60ED MGP2N60D MGS05N60D MGS13002D. 05N60D. ignition IGBTS 05n60 MHPM7B16A120B MHPM7B8A120A MHPM7A P15N MSH860 MGP7N60E PDF

    transistor motorola 236

    Abstract: motorola transistor m 237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GY25N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO-264 25 A @ 90 C 38 A @ 25°C 1200 VOLTS


    OCR Scan     		GY25N120D transistor motorola 236 motorola transistor m 237 PDF

    10A600V

    Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
    Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU


    OCR Scan     		HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V PDF