HDR2X10
Abstract: 2052-1618 HDR2X10STIMCSAFU MHVIC910HR2 2052161802 J596
Text: MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and
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HDR2X10STIMCSAFU
Abstract: MHVIC910HR2 c66c1
Text: MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The MHVIC Line 921 MHz - 960 MHz SiFET Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Will be replaced by MHVIC910HNR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MHVIC910HR2 921 MHz - 960 MHz SiFET
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Abstract: No abstract text available
Text: MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The MHVIC Line 921 MHz - 960 MHz SiFET Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and
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Abstract: No abstract text available
Text: Document Number: MHVIC910HR2 Rev. 7, 8/2006 Freescale Semiconductor Technical Data Replaced by MHVIC910HNR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations,
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HR2 Rev. 6, 7/2005 Will be replaced by MHVIC910HNR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MHVIC910HR2 921 MHz - 960 MHz SiFET
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HDR2X10STIMCSAFU
Abstract: MHVIC910HR2 J559
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. 921 MHz − 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations,
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MHVIC910HR2
Abstract: A113 HDR2X10STIMCSAFU MHVIC910HNR2 J559
Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HR2 Rev. 7, 8/2006 Replaced by MHVIC910HNR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations,
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LDMOS PA Driver IC, Motorola
Abstract: MHVIC910HR2 AN1949 RO4350
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1949/D AN1949 Mounting Method for the MHVIC910HR2 PFP-16 and Similar Surface Mount Packages Prepared by: Wendi Stemmons, Richard Wetz, Mahesh Shah, Eddie Mares, Jin–Wook Jang and Lynn Frye
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AN1949/D
AN1949
MHVIC910HR2
PFP-16)
LDMOS PA Driver IC, Motorola
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AN1949
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ipc 840
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MHVIC910HR2 Rev. 5, 1/2005 Will be replaced by MHVIC910HNR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP−16 package has had lead−free terminations from its initial release. MHVIC910HR2 921 MHz − 960 MHz SiFET
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HR2 Rev. 6, 7/2005 Will be replaced by MHVIC910HNR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MHVIC910HR2 921 MHz - 960 MHz SiFET
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940 629 MOTOROLA
Abstract: HDR2X10 DB4140
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and
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DB4140
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 921 MHz − 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and
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MHVIC910HR2
Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
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MW6S010NR1
MW6S010GNR1
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CRCW12061001FKEA
ATC700A331JT150XT
1265A
ATC700a
FREESCALE PACKING
A113
A114
AN1955
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MHL9838
Abstract: MHL9236
Text: Chapter Six Motorola RF Amplifier ICs and Modules – Data Sheets Device Number Page Number Amplifier ICs and Modules MHL9236 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6–3 MHL9236M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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MHL9318
MHL9838
MHL18336
MHL18926
MHL19338
MHL19926
MHL19936
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MHL9838
MHL9236
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CRCW08051000FKTA
Abstract: MHV5IC2215N J088 TAJA105K035R 01145 A113 A114 A115 AN1955 AN1987
Text: Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage 28 Volts LDMOS IC
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MHV5IC2215N
J088
TAJA105K035R
01145
A113
A114
A115
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AN1987
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 9, 5/2006 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescales newest High Voltage 26 Volts LDMOS IC technology, and
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stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,
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MMM6025
MC13820
MRF377HR3,
MRF377HR5
MRF6S9045NR1,
MRF6S9045NBR1,
MRF6S9060NR1,
MRF6S9060NBR1,
MRF6S9125NR1,
stripline directional couplers
MRFP36030
MRF5S9080NB
NONLINEAR MODEL LDMOS
MRF377HR5
Product Selector Guide
MRF1511NT1 ESD
MC13820
MRF377HR3
MRF6S9045NBR1
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MHVIC910HNR2
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 8, 10/2005 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and
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840 s
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 8, 10/2005 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and
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TRANSISTOR REPLACEMENT GUIDE
Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station
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MRF5S9070NR1,
MRF5S9100MR1,
MRF5S9100MBR1,
MRF5S9100NR1,
MRF5S9100NBR1,
MRF5S9101MR1,
MRF5S9101MBR1,
MRF5S9101NR1,
MRF5S9101NBR1,
TRANSISTOR REPLACEMENT GUIDE
FS Oncore
hf modem ofdm
bts 2140 1b data sheet
ISO 1302
uhf linear amplifier module
linear amplifier 470-860
amplifier mrf247
class AB hf bipolar
FM LDMOS freescale transistor
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2a258 transistor
Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
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2a258 transistor
Fuji Electric tv schematic diagram
smd transistor WB3
VHF FM PLL schematic mc145152
Motorola transistor smd marking codes
MARK 176 SOT363 RF
Note AR164, Motorola RF Device Data, Volume II, D
tip off 0401 mosfet transistor
cordless phone Transceiver IC
semiconductors cross index
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC910HNR2 Rev. 7, 7/2005 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2 The MHVIC910HNR2 integrated circuit is designed for GSM base stations, uses Freescale’s newest High Voltage 26 Volts LDMOS IC technology, and
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MMZ20363B
Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless
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