MR 6500
Abstract: TI process change notice D929
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: May 28, 1999 Subject: PRODUCT CHANGE NOTICE – D92901 Description: Convert DS21Q43 to the Standard 0.6 micron Process Flow
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D92901
DS21Q43
Ti/250
DS21Q43
waDS21Q43
MR 6500
TI process change notice
D929
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TIA AGC application note
Abstract: MC20L10 MC2010 photodiode die WAFER 0201X-PBD-001
Text: Preliminary Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. MC2010 TIA with AGC for 3.3V Applications to 1.25 Gbps The MC2010 is a transimpedance amplifier TIA with AGC manufactured in a sub-micron, CMOS process. The
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MC2010
MC2010
25Gbps
02010-DSH-001-C
M02017
TIA AGC application note
MC20L10
photodiode die WAFER
0201X-PBD-001
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shim
Abstract: No abstract text available
Text: Advance Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. MC2010 TIA with AGC for 3.3V Applications to 1.25 Gbps The MC2010 is a transimpedance amplifier TIA with AGC manufactured in a sub-micron, CMOS process. The
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MC2010
MC2010
25Gbps
02010-DSH-001-B
shim
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Micron Technology
Abstract: No abstract text available
Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
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20Note/DRAM/TN4102
TN-41-04:
TN-41-13:
TN-46-02:
TN-46-06:
TN-46-11:
TN-46-14:
TN-47-19:
TN-47-20:
Micron Technology
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aptina CMOS image sensor
Abstract: MT9T001C12STC mt9* aptina Aptina MT9T031P12STC MT9T001P12STC MT9T031C12STC CMOS sensor Aptina MT9T001P12 image sensor Aptina
Text: Product Change Notice Aptina PCN#: 30200 Date: August 20, 2009 Type Of Change: Chip ID Imaging only Manufacturing Site Change Manufacturing Process Change Die/Product Revision Product Material Change Shipping/Packaging Material Change Packing/Label/Marking Change
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JESD46-B
aptina CMOS image sensor
MT9T001C12STC
mt9* aptina
Aptina
MT9T031P12STC
MT9T001P12STC
MT9T031C12STC
CMOS sensor Aptina
MT9T001P12
image sensor Aptina
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MC9S12Dx256
Abstract: MC9S12A256BCPV IPC-1752 MC9S12C32 EAR99 HCS12 11462
Text: Page 1 of 4 MC9S12A256BCPV Information General information Package information Environmental and Compliance information Manufacturing and Qualification information Ordering information Product/Process Change Notice PCN Operating Characteristics General Information
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MC9S12A256BCPV
MC9S12A256BCPV
HCS12
L-PQFP-G112
MC9S12Dx256
IPC-1752
MC9S12C32
EAR99
11462
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intel motherboard schematic
Abstract: intel motherboard chipset schematic celeron socket 370 motherboard Socket-370 pentium 4 motherboard schematic PGA370 82801BA R135 R334 motherboard schematic
Text: R Intel 815 Chipset Platform for Use with Universal Socket 370 Design Guide Update October 2002 Notice: The Intel® 815 Chipset family may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are
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MC9S12Dx256
Abstract: tray qfp 14x14 1.4 tray qfp 14x14 PEAK TRAY qfp 14x14 MC9S12A256CFUE 1K79X peak mqfp 14x14 EAR99 HCS12 HCS12 1k79x
Text: Page 1 of 4 MC9S12A256BCFU Information General information Package information Environmental and Compliance information Replacement Parts Information Manufacturing and Qualification information Ordering information Product/Process Change Notice PCN Operating Characteristics
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MC9S12A256BCFU
MC9S12A256BCFU
HCS12
PQFP-G80
MC9S12Dx256
tray qfp 14x14 1.4
tray qfp 14x14
PEAK TRAY qfp 14x14
MC9S12A256CFUE
1K79X
peak mqfp 14x14
EAR99
HCS12 1k79x
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MOTHERBOARD INTEL 815
Abstract: Socket-370 MICRON RESISTOR Mos celeron socket 370 motherboard INTEL MOTHERBOARD SCHEMATICS 82815 pc motherboard schematics PGA370 82801BA R135
Text: R Intel 815 Chipset Platform for Use with Universal Socket 370 Design Guide Update October 2001 Notice: The Intel® 815 Chipset family may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are
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PCN0114
Abstract: MICRON TECHNOLOGY marked altera memory flash
Text: PROCESS CHANGE NOTICE PCN0114 ADDITIONAL WAFER FABRICATION SOURCE OF SUPPLY Change Description: Altera is adding Micron Technology’s wafer fabrication facility located in Boise Idaho for its Configuration Device Flash Memory support. Reason For Change: Micron Technology has been selected as a second source because of their excellent wafer
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PCN0114
PCN0113)
PCN0114
MICRON TECHNOLOGY
marked
altera memory flash
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HI-8482
Abstract: HI-8482CM-01 PCN0904 HI-8482SM-14
Text: 100mm to 150mm Wafer Conversion for HI-8482 Series of ARINC 429 Products Product Change Notice PCN0904 v1.0 September 10, 2012 Overview The purpose of this notice is to document the completed conversion of Holt devices manufactured using the 100mm 4.0um
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100mm
150mm
HI-8482
PCN0904
JESD46-C,
QR-9021
HI8482
HI-8482CM-01
PCN0904
HI-8482SM-14
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HI-8588PST
Abstract: HI8588PSIf HI-8588PSI-10 HI-8588CRT-10
Text: Wafer Fab Process Transfer for HI-8382/8383 & HI-8588/8588-10 Series of ARINC 429 Products Product Change Notice PCN0811 v1.0 December 02, 2008 Overview The purpose of this notice is to announce the completed transfer of the Holt devices manufactured using the 100mm 4.0um
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HI-8382/8383
HI-8588/8588-10
100mm
150mm
PCN0811
QR-8005
HI8590
QR-8006
HI-8588PST
HI8588PSIf
HI-8588PSI-10
HI-8588CRT-10
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intel motherboard chipset schematic
Abstract: 82815 r390 resistor r390 274 intel 82815 ICH2 815E 82801BA PGA37 2985* intel
Text: R Intel 815E Chipset Platform for Use with Universal Socket 370 Design Guide Update October 2001 ® Notice: The Intel 815E chipset family may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are
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494P
Abstract: PI5C3384 BEX52 HP8110A PI5C3245 PI5C3861 Volt, SPDM, CMOS HYNIX lot date code 5C338
Text: PCN # 02-01 DATE: January 21, 2002 TO: All Affected Pericom Customers SUBJECT: Product Change Notice PCN – Revised Die Array Type for Select 5 Volt 8-Bit Bus Switches Pericom is in the process of converting some additional 5-volt, 8-bit Bus Switch products from Chartered
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PI5C3384
10MHZ
20MHZ
PI5C3384Q
494P
BEX52
HP8110A
PI5C3245
PI5C3861
Volt, SPDM, CMOS
HYNIX lot date code
5C338
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297848
Abstract: DA28F320j5 120 g28F640j5 28F320J5 28F640J5 DA28F320J5-100 DA28F320J5-120 DA28F640J5-150 E28F320J5-120 G28F640J5-150
Text: 5 Volt Intel StrataFlash Memory 28F320J5 and 28F640J5 Specification Update May 2002 Notice: The 28F320J5 and 28F640J5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized
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28F320J5
28F640J5
28F640J5
64-Mb
297848
DA28F320j5 120
g28F640j5
DA28F320J5-100
DA28F320J5-120
DA28F640J5-150
E28F320J5-120
G28F640J5-150
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28F160B3
Abstract: 28F008 28F320B3 28F640B3 640B3
Text: 3 Volt Intel Advanced Boot Block Flash Memory 28F004/400/008/800/ 016/160/320/640B3 x8/x16 Specification Update April 2002 Notice: The 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 may contain design defects or errors known as errata, which may cause the product to deviate from published
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28F004/400/008/800/
016/160/320/640B3
x8/x16)
28F004/400B3,
28F008/800B3,
28F016/160B3,
28F320B3,
28F640B3
32-Mb
16-Mb,
28F160B3
28F008
28F320B3
640B3
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28F004
Abstract: 28F008 28F160B3 28F320B3 28F640B3
Text: Intel Advanced Boot Block Flash Memory 28F004/400/008/800/ 016/160/320/640B3 x8/x16 Specification Update April 2002 Notice: The 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 may contain design defects or errors known as errata, which may cause the product to deviate from published
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28F004/400/008/800/
016/160/320/640B3
x8/x16)
28F004/400B3,
28F008/800B3,
28F016/160B3,
28F320B3,
28F640B3
32-Mb
16-Mb,
28F004
28F008
28F160B3
28F320B3
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pr 4401
Abstract: DS2436Z pr35 DS2436S DS2436 DS2436B
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: August 22, 2000 Subject: PRODUCT CHANGE NOTICE – H002203 Description: DS2436 Changing from A2 to C6
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H002203
DS2436
DS24360-000
DS2436S-000
DS2436S-TRL
16-pin
pr 4401
DS2436Z
pr35
DS2436S
DS2436B
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9940
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 9/28/99 Subject: PRODUCT CHANGE NOTICE – I92201 Description: DS5002M revision change from B4 to C5
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I92201
DS5002M
9940
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 9/21/98 Subject: PRODUCT CHANGE NOTICE - I80903 Description: DS5001 & DS5002 revision change from B3 to C3
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I80903
DS5001
DS5002
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NAND Flash DIE
Abstract: TMM10 "electrical connector"
Text: Embedded USB Mass Storage Drive e230 Features Embedded USB Mass Storage Drive (e230) MTEDCAR002SAJ-1M2/1M2IT, MTEDCAR004SAJ-1N2/1N2IT MTEDCAR008SAJ-1N2/1N2IT, MTEDCAR016SAJ-1N2/1N2IT MTEDCBR002SAJ-1M2/1M2IT, MTEDCBR004SAJ-1N2/1N2IT MTEDCBR008SAJ-1N2/1N2IT, MTEDCBR016SAJ-1N2/1N2IT
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MTEDCAR002SAJ-1M2/1M2IT,
MTEDCAR004SAJ-1N2/1N2IT
MTEDCAR008SAJ-1N2/1N2IT,
MTEDCAR016SAJ-1N2/1N2IT
MTEDCBR002SAJ-1M2/1M2IT,
MTEDCBR004SAJ-1N2/1N2IT
MTEDCBR008SAJ-1N2/1N2IT,
MTEDCBR016SAJ-1N2/1N2IT
MTEDCBE002SAJ-1M2/1M2IT,
MTEDCBE004SAJ-1N2/1N2IT
NAND Flash DIE
TMM10
"electrical connector"
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Untitled
Abstract: No abstract text available
Text: Product Brief – 121-Ball LPDDR2-PCM and LPDDR2 MCP Features Product Brief LPDDR2-PCM and Mobile LPDDR2 121-Ball MCP MT66R7072A10AB5ZZW.ZCA, MT66R7072A10ACUXZW.ZCA MT66R5072A10ACUXZW.ZFA Features Figure 1: MCP Block Diagram Micron LPDDR2-PCM and LPDDR2 components
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121-Ball
MT66R7072A10AB5ZZW
MT66R7072A10ACUXZW
MT66R5072A10ACUXZW
16-bit
09005aef84e25954
121ball
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micron E230
Abstract: PHIFS25-205GB 16GB Nand flash MODULE-64 usb 3.0 flash drive micron nand flash Flash Controller Micron
Text: Embedded USB Mass Storage Drive e230 Features Embedded USB Mass Storage Drive (e230) MTEDCAR002SAJ-1M2/1M2IT, MTEDCAR004SAJ-1N2/1N2IT MTEDCAR008SAJ-1N2/1N2IT, MTEDCAR016SAJ-1N2/1N2IT MTEDCBR002SAJ-1M2/1M2IT, MTEDCBR004SAJ-1N2/1N2IT MTEDCBR008SAJ-1N2/1N2IT, MTEDCBR016SAJ-1N2/1N2IT
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MTEDCAR002SAJ-1M2/1M2IT,
MTEDCAR004SAJ-1N2/1N2IT
MTEDCAR008SAJ-1N2/1N2IT,
MTEDCAR016SAJ-1N2/1N2IT
MTEDCBR002SAJ-1M2/1M2IT,
MTEDCBR004SAJ-1N2/1N2IT
MTEDCBR008SAJ-1N2/1N2IT,
MTEDCBR016SAJ-1N2/1N2IT
MTEDCBE002SAJ-1M2/1M2IT,
MTEDCBE004SAJ-1N2/1N2IT
micron E230
PHIFS25-205GB
16GB Nand flash
MODULE-64
usb 3.0 flash drive
micron nand flash
Flash Controller Micron
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MT46H32M16LFBF
Abstract: MT46H32M16LFBF-6 MT46H32M16LFCK-75 sac105 MT46H32M16LFCK-6 MT46H32M16LFCK smd diode s8 lp-ddr2 MT46H16M32LFCM-6 smd diode S4
Text: TN-46-16: 512Mb Mobile DDR: 95nm to 78nm Introduction Technical Note 512Mb Mobile DDR: 95nm to 78nm Product Transition Guide Introduction This document describes critical product differences associated with the 512Mb Mobile LP DDR SDRAM product as it transitions from 95nm process technology to 78nm
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TN-46-16:
512Mb
09005aef82dfb176
09005aef82dfb194
tn4616
MT46H32M16LFBF
MT46H32M16LFBF-6
MT46H32M16LFCK-75
sac105
MT46H32M16LFCK-6
MT46H32M16LFCK
smd diode s8
lp-ddr2
MT46H16M32LFCM-6
smd diode S4
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