Untitled
Abstract: No abstract text available
Text: Request form for confidential AFC documents NXP Semiconductors founded by Philips To: Document Control Officer NXP Semiconductors Austria GmbH Styria Fax: +43 3124 299 124 Mikron-Weg 1, A-8101 Gratkorn, Austria Email: nxp.docu-control@nxp.com Date: From:
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MFRC500
MFRC530
MFRC531
CLRC632
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Trident Microsystems
Abstract: INTEGRATED LOGIC SYSTEMS Pacific Softworks Lauterbach Datentechnik GmbH JMI Software Systems
Text: FusionE86 Third-Party Support SM JMI Software Systems Rachis Corporation KADAK Products Real Time Devices RTD USA Lauterbach Datentechnik GmbH Silicon Integrated Systems Metaware Microsoft Microtec Research Microtek International Mikron Pacific Softworks
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FusionE86
onE86
Trident Microsystems
INTEGRATED LOGIC SYSTEMS
Pacific Softworks
Lauterbach Datentechnik GmbH
JMI Software Systems
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3y23
Abstract: No abstract text available
Text: Technische Daten Technical Data Caractéristiques techniques N enndurchflufî Nominal flow Débit nominal 60 l/min Tem peraturbereich Tem perature range Plage thermique d'utilisation -10°C Filterfeinheit Micron rating Micronnage 3,5,10,20 Mikron F ilte rfla e ch e
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SP-030E
3y23
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Untitled
Abstract: No abstract text available
Text: s e MIKROn V drm V rsm V rrm I r m s 1> Volw = 4 l/min, Tw = 40 °C, ED = 50 %, n = 10 V 1900 A 2400 A 1200 SKW 1200/12 SKW 1700/12 1400 SKW 1200/14 SKW 1700/14 1600 SKW 1200/16 SKW 1700/16 Symbol Conditions Irms1* Itsm Volw = 4 l/min, Tw = 40 °C, ED =100%
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fll3bh71
SKW1200
Gb053
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Untitled
Abstract: No abstract text available
Text: s e MIKROn Fast Recovery Rectifier Diodes maximum values for continuous operation 30 A 47 A 72 A V r sm I fr m s V r rm IfA V (sin. 180; Tease = 85 °C; 50 Hz) 48 A SKR20 F SKR 31 F SKR 48 F V 20 A 31 A 1000 SKR 20F10 SKR 31F10 SKR 48F10 1200 SKR 20F12 SKR 31F12
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SKR20
20F10
31F10
48F10
20F12
31F12
48F12
SKR20F
SKR31F
SKR48F
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Untitled
Abstract: No abstract text available
Text: s e MIKROn V rsm V rrm Ifrm s Ifa v V Ultrafast Epitaxial Diode Modules maximum value for continuous operation 110 A | (sin. 325 A 1 8 0 ; Tease = 8 5 ° C ; 5 0 4 8 ,5 A Hz) 207 A 100 SKKD 50 E 01 200 SKKD 50 E 02 SKND 50 E 02 SKMD 202 E 02 SKND 202 E 02
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SKND50E
T0-240
SKMD202E
SKKD50E
SKND202
B2-20
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SKNA4
Abstract: No abstract text available
Text: se MIKROn V rsm Rectifier Diodes Ifrm s maximum values for continuous operation V rrm 5A 10 A V 2,5 A 5A | SKN 2,5 SKN5 Ifa v (sin. 180; Tamb —45 °C) 200 - SKN 5/02 400 SKN 2,5/04 SKN 5/04 800 SKN 2,5/08 SKN 5/08 1200 SKN 2,5/12 SKN 5/12 1600 SKN 2,5/16
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fll3bb71
00Gb310
SKNA4
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Untitled
Abstract: No abstract text available
Text: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms
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Untitled
Abstract: No abstract text available
Text: se MIKRON SKiiP W3C Thyristor 3 ~ AC Switch SKiiP 420 TAT 22 V rm s V drm l RM s f ° r continous operation, Tamb = 35 °C, mounted on heatsink P16/260F with radial fan SKF 16B-230-01 V rrm V V 690 1> 2200 SKiiP 420 TAT 22 Preliminary data 3x415 A Absolute Maximum Ratings
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P16/260F
16B-230-01
3x415
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Untitled
Abstract: No abstract text available
Text: s e MIKROn V drm Vrsm V rrm Irms1 Volw = 4 l/min., Tw = 40 °C, ED = 50 %, n = 10) V 850 A 1200 A 1200 SKIW 700/12 SKIW 900/12 1400 SKIW 700/14 SKIW 900/14 1600 SKIW 700/16 SKIW 900/16 Symbol Conditions Ir m s 1) It s m ft SKIW 700 II Vt Tvj = 25 °C; V t (t o )
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Semikron ske
Abstract: SKE4F SKE 2.5/08 SKE4F2 semikron ske 4 f 2 SKE 2 F 2/02 SKE 4 F 2/04 SKE 2,5/17 SKE4G2/04 SKE 1/08
Text: 1SE D 2 MIKRON INC Ô l 3 t t 7 1 QQQ1Ö37 b | SE MIKRON - - T - 0 3 - IS Ifr m s V rsm V rrm Ifa v V trr Symbol sin. 180; Tamb = 45 °C 2A = 0,2 (IS trr — SKE4G2/02 SKE4G2/04 SKE 4 G 2/06 SKE 4 F 2/02 SKE 4 F 2/04 SKE 4 F 2/06 SKE 4 F 2/08
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SKE4G2/02
SKE4G2/04
fll3bb71
Q001fl40
Semikron ske
SKE4F
SKE 2.5/08
SKE4F2
semikron ske 4 f 2
SKE 2 F 2/02
SKE 4 F 2/04
SKE 2,5/17
SKE4G2/04
SKE 1/08
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SEMIKRON SKIIP 20 NAB 12 T 17
Abstract: semikron skiip 21 nab 12 T 31 semikron skiip 21 nab 063 T 40 Semikron skiip 31 nab 12 skiip 10 nab 063 T 10 Semikron skiip 31 nab 12 T 10 SKiiP 31 NAB 12 T 16 semikron skiip nab 06 semikron skiip 32 nab 12 semikron skiip 32 nab 12 t 7
Text: se MIKROn SKiiP SG NAB GB Absolute Maximum Ratings Symbol C onditions 1 Values Units T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C 6GG ± 2G S6 I 25 72 I 5G 57 I SS 114 I 76 V V A A A
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semikron skiip 31 nab 12
Abstract: semikron skiip 32 nab 12 SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 31 Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 skiip 31 nab 125 t 12 Semikron skiip 31 nab Semikron skiip 31 nab 12 T 10 semikron skiip nab
Text: se MIKROn SKiiP 31 NAB GB Absolute Maximum Ratings Symbol Conditions 1 Values Units Theatsink = 25 I SG oC tp < 1 ms; Theatsink = 25 I SG C Theatsink = 25 I SG oC tp < 1 ms; Theatsink = 25 I SG C 6GG ± 2G 5G I 35 1GG I 7G 57 I 3S 114 I 76 V V A A A A SGG
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Untitled
Abstract: No abstract text available
Text: s e MIKROn Absolute Maximum Ratings Symbol C onditions V a lu e s Units 1 AC, 1 min. DIN 40 040 DIN tEC 68 T.1 1200 1200 400 / 300 800 / 600 ±20 2500 - 4 0 . . .+150 125 2 500 ?) Class F 55/150/56 Inverse Diode I f = - lc Tease — 25/80 ! C Tease 25/80 :!Cj tp —1 nts
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b845
Abstract: B-845 A2S60 MS3100A mikron
Text: se MIKROn V rsm Ifa V sin. 180; Tease Rectifier Diodes = 75 °C SKN 3000 SKN 3400 V rrm 1200 - 1400 - 1600 - 1800 - 2600 2800 3200 3600 Symbol Conditions If a v sin.180; T Vj T Vj i2t T V| T Vj Ir SKN 3400/12 SKN 3400/14 SKN 3400/16 SKN 3400/18 SKN 3000/22
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B8-45
b845
B-845
A2S60
MS3100A
mikron
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Untitled
Abstract: No abstract text available
Text: s e MIKRON Absolute Maximum Ratings Sym bol Values . 102 D Conditions 1' 1200 1000 1000 1200 200/150 400/300 ± 20 1250 - 5 5 . . .+150 2 500 Class F 55/150/56 VCES R g e = 2 0 k£2 VcG R lc Tease ICM Tease V = 25/80 C = 25/80 C ges per IGBT. Ptot T case
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semikron SK 50 DB 100 D
Abstract: SK 50 DB 100D
Text: s e MIKRON Maximum Ratings Conditions VcEVsus VCEV Values Units lc = 1 A, V be = - 2 V 1000 V > CM I II LU CD > Symbol 1000 V 1000 V VCBO Ie = 0 V ebo lc = 0 7 V lc D. C. 50 A tp = 1 ms 100 A D. C. 50 A ICM If = - lc 3 A 400 W Tvj - 4 0 . . . + 150 °C Tstg
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-iti----22
B7-74
semikron SK 50 DB 100 D
SK 50 DB 100D
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wl3 diode
Abstract: CASED69A semikron skd 32 DIODE D16
Text: s e MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Ptot Tj, Tstg Visol humidity climate Units Rge = 20 k£2 Tease = 25/80 °C Tease = 25/80 °C; tp = 1 ms per IGBT/D1/D8,Tcase=25°C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Diodes 9) If IfM= - IcM
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SKM 75 Gb 124 IGBT
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits VQE 23 F Semitrans M SKM IGBT FF 450
Text: se MIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges R ge = 20 k £ l T oase = 25/75 °C T oase = 25/75 °C; tp = 1 ms Ptot Tj, Tstg) per IG B T , T oaSe = 25 °C Visol AC, 1 min. DIN 40040 DIN IEC 68T.1 humidity climate
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Untitled
Abstract: No abstract text available
Text: Technische Daten Technical Data Caractéristiques techniques N enndurchflufî Nominal flow Débit nominal 40 l/min Tem peraturbereich Tem perature range Plage thermique d'utilisation -10°C . . . +100°C Filterfeinheit Micron rating Micronnage 3,5,10,20 Mikron
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SP-024E
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SP090
Abstract: stauff 090E
Text: Technische Daten Technical Data Caractéristiques techniques N enndurchflufî Nominal flow Débit nominal 360 l/min Tem peraturbereich Tem perature range Plage thermique d'utilisation -10°C Filterfeinheit Micron rating Micronnage 3,5,10,20 Mikron F ilte rfla e ch e
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SP-090E
SP090
stauff
090E
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Semikron B2HKF
Abstract: B2HKF semikron SKpc SKPC100 SKPC100Z zero crossing IC
Text: se MIKRON innovation+ service SKPC100 INSTANTANEOUS TRIGGER CONTROL MODE SKPC100Z ZERO VOLTAGE TRIGGER CONTROL MODE S K PC 100 is one of the new generation of mikron Power Control Modules SEMIPCM . The new design allows triggering of a wide range of SCR's for both zero voltage or
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SKPC100
SKPC100Z
UL94-VO
450Hz
2V/10
100mA
Semikron B2HKF
B2HKF
semikron SKpc
zero crossing IC
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Untitled
Abstract: No abstract text available
Text: s e MIKROn V hsm Ifrm s maximum values for continuous operation V rrm 100 A Fast Recovery Rectifier Diodes ÌFAV (sin. 180; Tease = • •• ) 50 A (105 °C) | SKN 2 F 50 SKR 2 F 50 50 A (95 °C) tri = 200 ns $ V $ 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04
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180/rec
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Untitled
Abstract: No abstract text available
Text: se MIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cE S VcGR lei IcN IcM = 20 k £ l T oase = 25/60 °C T oase = 25/60 °C; tp = 1 ms R ge V ges per IG B T , T oase = 25 °C Ptot Tj, T stg) Vsol humidity climate AC, 1 min. 4> D IN 40 040
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