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    MITSUBISHI SOLDERING PROCESS Search Results

    MITSUBISHI SOLDERING PROCESS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    MITSUBISHI SOLDERING PROCESS Datasheets Context Search

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    senju solder paste

    Abstract: senju printing speed Senju metal solder paste viscometer Rosin Flux Type RMA Senju flux Senju soldering paste solder powder 62Sn36Pb2Ag
    Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.3 SOLDER SUPPLY PROCESS 2.3.1 SOLDER PASTE 1 Material Composition Soldering paste is mainly made from soldering powder and flux. Soldering powder makes up approximately 80-95wt% of soldering paste


    Original     		PDF 80-95wt% 63Sn/37Pb) 62Sn/36Pb/2Ag) senju solder paste senju printing speed Senju metal solder paste viscometer Rosin Flux Type RMA Senju flux Senju soldering paste solder powder 62Sn36Pb2Ag

    MITSUBISHI INTEGRATED CIRCUIT PACKAGES reflow

    Abstract: MITSUBISHI INTEGRATED CIRCUIT PACKAGES mitsubishi soldering process
    Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.5 SOLDERING PROCESS There are two soldering methods used in surface mounting: the flow method and reflow method. This section outlines the latter, which is mainstream in the industry. Table 6 REFLOW METHOD EXAMPLES


    Original     		PDF Lon13 10sec 30sec 20sec 30sec MITSUBISHI INTEGRATED CIRCUIT PACKAGES reflow MITSUBISHI INTEGRATED CIRCUIT PACKAGES mitsubishi soldering process

    detail in table SURFACE MOUNT COMPONENTS

    Abstract: MITSUBISHI INTEGRATED CIRCUIT PACKAGES reflow
    Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.2 PRINTED CIRCUIT BOARD DESIGN In surface mounting, mount pad designing and board material selection are critical. Mount pad designing may influence solder yield. The substrate material may influence post-soldering reliability.


    Original     		PDF

    MITSUBISHI CAPACITOR

    Abstract: paste capacitor SOLDERING REFLOW process mitsubishi SOP mitsubishi
    Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.1 SURFACE MOUNTING PROCESS SEQUENCE This section shows the surface-mounting process flow chart. There are two soldering methods: the flow method and reflow method. In surface mounting, the latter is usually used.


    Original     		PDF

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


    Original     		PDF 20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h

    Ultrasonic Cleaning Transducer

    Abstract: Ultrasonic cleaner piezo ULTRASONIC cleaning transducers Ultrasonic cleaner spray nozzles MITSUBISHI IGNITION ultrasonic transducer cleaning Terpene ultrasonic transducer clean circuit of "ultrasonic cleaner"
    Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.6 CLEANING PROCESS CFCs CFC-113 , Trichlene, 1.1.1-trichloroethane have conventionally been used to clean flux upon completion of component mounting on printed boards. For environmental concerns, however, production and use of these solvents are strictly regulated. Cleaning using an


    Original     		PDF CFC-113) Ultrasonic Cleaning Transducer Ultrasonic cleaner piezo ULTRASONIC cleaning transducers Ultrasonic cleaner spray nozzles MITSUBISHI IGNITION ultrasonic transducer cleaning Terpene ultrasonic transducer clean circuit of "ultrasonic cleaner"

    RD02MUS1

    Abstract: RD07MVS1 mitsubishi bipolar rf power pcb warpage after reflow MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-034-C Date : 5th Oct. 2006 Prepared : E.Akiyama S.Kametani Confirmed : T.Ohkawa SUBJECT: Recommended mounting & precaution for RD07MVS1&RD02MUS1 SUMMARY: This application note shows recommendation device mount method & precaution for


    Original     		PDF AN-GEN-034-C RD07MVS1 RD02MUS1 RD02MUS1. AN-GEN-034 507mm. RD02MUS1 mitsubishi bipolar rf power pcb warpage after reflow MITSUBISHI APPLICATION NOTE RF POWER

    pcb warpage after reflow

    Abstract: RD02MUS1 RD07MVS1
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-034-D Date : 5th Dec. 2003 Rev.date : 7th Jan. 2010 Prepared : N.Watanabe M.Wada Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Recommended mounted & precaution for RD07MVS1&RD02MUS1


    Original     		PDF AN-GEN-034-D RD07MVS1 RD02MUS1 RD02MUS1. AN-GEN-034 507mm. pcb warpage after reflow RD02MUS1

    shinetsu G746 rohs

    Abstract: shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-D th Date : 30 May 2001 Rev. date : 26th Dec. 2006 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR MITSUBISHI RF POWER DEVICES GENERAL:


    Original     		PDF AN-GEN-006-D shinetsu G746 rohs shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER

    shinetsu

    Abstract: G746 mitsubishi semiconductors power modules mos semiconductor Mitsubishi Electric
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-F Date : 30th May 2001 Rev. date : 12th Jan. 2010 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR


    Original     		PDF AN-GEN-006-F shinetsu G746 mitsubishi semiconductors power modules mos semiconductor Mitsubishi Electric

    G746

    Abstract: No abstract text available
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-006-G Date : 30th May 2001 Rev. date : 22th.Jun. 2010 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR


    Original     		PDF AN-GEN-006-G G746

    Mitsubishi FXos-20MR-ES

    Abstract: FXOS-20MT-DSS mitsubishi fx 16 20MR fx 20mr-es POIN FXos mitsubishi triac FXOS-14MR-DS FXOS-20MR-ES FXoS-20MR-ES/UL
    Text: FXos MICRO CONTROLLER SERIES Less soldering more cont rol A MITSUBISHI ELECTRIC Y o u r p a r t n e r in i n d u s t r i a l a u t o m a t i o n s y s t e m s THE PERFECT FIT FOR EMBEDDED APPLICATIONS S m a lle s t Footprint Yet The FXos range is the latest addition to the FX fa m ily of ‘b rick’


    OCR Scan     		PDF 14kHz Mitsubishi FXos-20MR-ES FXOS-20MT-DSS mitsubishi fx 16 20MR fx 20mr-es POIN FXos mitsubishi triac FXOS-14MR-DS FXOS-20MR-ES FXoS-20MR-ES/UL

    z63n

    Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
    Text: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us­ ing a 0.8 micron drawn twin well silicon gate process


    OCR Scan     		PDF M6008X MDS-GA-02-03-91 z63n t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W

    Z158

    Abstract: V i Curve Tracer curve tracer "curve tracer" TRACER SC 6249 MGF-7004
    Text: — MITSUBISHI {DISCRETE SC> TI D E | b 5 M ci ñ S cl G O l G l b O 9 1D 1 0 1 6 0 N o v e « - t h l* CT T T MITSUBISHI SEMICONDUCTOR<GaAs MMIO DT-31-25 MGF7004 « to c W » « * 8 GaAs MONOLITHIC MICROWAVE 1C DESCRIPTION OUTLINE DRAWING The M GF7004 is a monolithic microwave integrated circuit


    OCR Scan     		PDF DT-31-25 MGF7004 GF7004 Z--158 Z158 V i Curve Tracer curve tracer "curve tracer" TRACER SC 6249 MGF-7004

    MGFK30M4045

    Abstract: E 212 fet DC bias of gaas FET
    Text: TL MITSUBISHI {DISCRETE SC3- D E ltS M T flH T 0D1G142 7 MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK30M 4045 FOR MICROWAVE PO W ER A M P LIFIE R S IN TERN A LLY MATCHED 6249829 M ITSU BISH I D ISC R ETE SC 9 1 D 10142 D T-39-ôS DESCRIPTION The MGFK30M4045 is an internally impedance-matched


    OCR Scan     		PDF 0D1G142 GFK30M MGFK30M4045 E 212 fet DC bias of gaas FET

    PM 1207

    Abstract: No abstract text available
    Text: MITSUBISHI D I S C R E T E SC bl E D 0D154MM Ô Ô4 H i n i T 5 MITSUBISHI SEMICONDUCTOR (GaAs FET) FA01205,FA01206.FA01207 800MHz BAND 0.6W RF POWER HYBRID IC d e s c r ip t io n F A 0 1 2 0 5 , 'F A 0 1 2 0 6 , F A 0 1207 is RF power Hybrid OUTLINE DRAWING


    OCR Scan     		PDF 0D154MM FA01205, 800MHz PM 1207

    MGF2116

    Abstract: No abstract text available
    Text: TL MITSUBISHI {DISCRETE SC> DE 1^34^02=1 OOlDOfl? 3 MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F2116 6249823 MITSUBISHI DISCRETE SC 91D 10087 DT^-CS FOR M ICROW AVE PO W ER A M P LIFIER S DESCRIPTIO N The MGF2116, tiigh-power GaAs F E T with an N-channel Schottky gate, is designed for use in S- to Ku-band ampli­


    OCR Scan     		PDF F2116 MGF2116, MGF2116

    MGFK25M4045

    Abstract: No abstract text available
    Text: MITSUBISHI {DISCRETE SC> DElbaMTfiSi 001013^ 7 1 r-3?-¿>5 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK25M404S FOR M ICR O W AVE P O W E R A M P L IF IE R S IN TER N A LLY MATCHED DESCRIPTION The MGFK25M4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0 ~ 14.5


    OCR Scan     		PDF MGFK25M404S MGFK25M4045

    DC bias of gaas FET

    Abstract: transistor GaAs FET s parameters
    Text: MITSUBISHI {DISCRETE SC> TÏ » F | b S 4 ciflST □D1D113 □ MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2312 6 2 4 9 8 2 9 MITSUBI SH I DISCRETE SC 9 1D 10113 0 7 :3 1'£>5 FOR MICROW AVE PO W ER AM PLIFIERS D E S C R IP T IO N The MGF2312 is designed for power amplifiers and oscilla­


    OCR Scan     		PDF D1D113 MGF2312 MGF2312 DC bias of gaas FET transistor GaAs FET s parameters

    MGF7003

    Abstract: maxim curve tracer MGF-7003
    Text: MITSUBISHI {DISCRETE S O TI ]>Er|L:24cia5ti QQlQlSb 7 T o T- 31-3S M IT SU BISH I SEMICONDUCTOR<GaAs M M IO MGF7003 « -aie" s»*'“ « S 'í « 1- * 00\ a_Ü“ í^ m ' ’15 N S“Í Ca % G aA s M O N O LIT H IC M IC R O W A V E IC DESCRIPTIO N O UTLINE DRAW ING


    OCR Scan     		PDF 31-3S MGF7003 MGF7003 maxim curve tracer MGF-7003

    mitsubishi mgf

    Abstract: curve tracer
    Text: MITSUBISHI {DISCRETE S O 6 2 4 9 82 9 MITSUBISHI TÎ » F | t . 5 4 c]flEci 001D133 t <D ISCRETE SC MITSUBISHI SEMICONDUCTOR <GaAs FET> 33 o re U N " n a r V 9,0 7MGFX34S9398 101 Nov0 n«ämaV«e« FOR MICROWAVE PO W ER AM PLIFIERS INTERNALLY M ATCHED Som® Pai


    OCR Scan     		PDF 001D133 MGFX34S9398 mitsubishi mgf curve tracer

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI {DISCRETE SC> TL DE | bSMTfiH'ì D O l O ll b MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2324 6249829 MITSUBISHI D I S C R E T E SC 9 1D 1 O 1 1 6 D T-& -Ò S FOR MICROW AVE PO W ER AM PLIFIERS DESCRIPTION The M G F 2 3 2 4 is designed fo r power am plifiers and oscilla­


    OCR Scan     		PDF MGF2324

    F2117

    Abstract: MGF2117 GF2117
    Text: TI MITSU BI SH I {DISCRETE S O DE Q0 1 Q D T 0 3 | ~ MITSUBISHI SEMICONDUCTOR <GaAs FET> 6249829 MITSUBISHI D I S C R E T E SC MGF2117 DT-&-Ù5 9 1 D 10090 FOR M ICROW AVE PO W ER A M P LIFIE R S DESCRIPTION The M GF2117, high-power GsAs F E T with an N-channel


    OCR Scan     		PDF MGF2117 GF2117, F2117 MGF2117 GF2117

    gf220

    Abstract: No abstract text available
    Text: MITSUBISHI {DISCRETE SC> TL I F | 1,54^02^ DD1D11D 5 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2205 £249 82 9 MITSUB I SH I DISCRETE SC) 91D 10110 D FOR MICROW AVE PO W ER AM PLIFIERS DESCRIPTION OUTLINE DRAWING Unit:millimeters(inches) The M G F 2 2 0 5 , high-power GaAs F E T w ith an N-channel


    OCR Scan     		PDF DD1D11D MGF2205 gf220