2SK3128
Abstract: No abstract text available
Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 9.5 mΩ (typ.) l High forward transfer admittance : |Yfs| = 40 S (typ.)
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2SK3128
2SK3128
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K3128
Abstract: 2SK3128
Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.)
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2SK3128
K3128
2SK3128
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Untitled
Abstract: No abstract text available
Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 9.5 mΩ (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.)
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2SK3128
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CEP04N6
Abstract: 600V,4A DIODE
Text: CEP04N6/CEB04N6 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 4A , RDS ON =2.5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
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CEP04N6/CEB04N6
O-220
O-263
CEP04N6
600V,4A DIODE
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PDF
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K3128
Abstract: 2SK3128
Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.)
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Original
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2SK3128
K3128
2SK3128
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PDF
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K3128
Abstract: 2SK3128
Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.)
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Original
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2SK3128
K3128
2SK3128
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PDF
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K3128
Abstract: 2SK3128 k312
Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.)
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Original
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2SK3128
K3128
2SK3128
k312
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Untitled
Abstract: No abstract text available
Text: DC DC Filter & Surge Protection DSF226 Series xppower.com • Up to 200 W Output Power • Active Surge Protection • MIL STD 461 & DEF STAN 59 411 • MIL STD 1275A D • DEF STAN 61 5 Part 6 Issue 6 • MIL STD 810 • 3 Year Warranty Specification Input
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DSF226
MIL-STD-1275A/B/C/D
MIL-STD-704A,
DSF226
MTC50
MTC150
19-Nov-13
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PDF
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Untitled
Abstract: No abstract text available
Text: OM6501ST OM6502ST INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability
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OCR Scan
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OM6501ST
OM6502ST
O-257AA
MIL-S-19500,
OM65Q1ST
OM65Q2ST
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PDF
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2SK3128
Abstract: SC-65 mj 411 transistor
Text: TO SH IBA 2SK3128 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 28 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : RßS (ON) = 9.5 mH (Typ.)
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OCR Scan
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2SK3128
2SK3128
SC-65
mj 411 transistor
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Untitled
Abstract: No abstract text available
Text: OM6512SC OM6513SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt. 8 Am p. N-C hannel IGBT In A H e r m e tic Metal Package FEATURES • Isolated Hermetic Metal Package • High Input Impedance • Low On-Voltage • High Current Capability
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OCR Scan
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OM6512SC
OM6513SC
O-258AA
MIL-S-19500,
OM6513SC
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PDF
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GP11N
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N 6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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OCR Scan
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MGP11N60E
GP11N
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PDF
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Untitled
Abstract: No abstract text available
Text: OM6514SS OM6515SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt. 8 Am p , N- Channel IGBT In A H erm e tic Metal Package FEATURES • • • • • • • • Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance
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OCR Scan
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OM6514SS
OM6515SS
MIL-S-19500,
OM6515SS
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SK3128 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSYI 2 S K 3 1 28 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS U nit in mm APPLICATIONS 15.9 MAX.
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OCR Scan
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2SK3128
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Untitled
Abstract: No abstract text available
Text: OM6508SA OM65Q9SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package FEATURES • • • • • • • • • Isolated Hermetic Metal Package
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OCR Scan
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OM6508SA
OM65Q9SA
O-254AA
MIL-S-19500,
125-C
OM65Q
OM65Q
QM6509SA
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IGBT in resonant converters
Abstract: ceis
Text: QM6507SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 1000 Volt. 8 A m p. N -C hannel IGBT In A H e rm e tic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off
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OCR Scan
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QM6507SA
O-254AA
MIL-S-19500,
QM6507SA
O-254AA
IGBT in resonant converters
ceis
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PDF
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12N60FI
Abstract: 12N60F sth12n60fi 12N60 transistor 12n60 st 12N60 12N-60F STH12N60 12n60 dc GS 069 7.2 24 v
Text: SGS-THOMSON ELiOT iD SS STH12N60 STH12N60FI N^ CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH12N60 STH12N60FI d ss 600 V 600 V R D S (o n Id 0.6 n 0.6 £2 12 A 7 A ; ; . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STH12N60
STH12N60FI
ISOWATT218
12N60
12V60/'
12N60FI
12N60F
sth12n60fi
transistor 12n60
st 12N60
12N-60F
12n60 dc
GS 069 7.2 24 v
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gc212
Abstract: STH8N80 STH8N80FI STW8N80 C18070
Text: 7 T 2 t1 2 3 7 OOMSTOO *=554 • S G T H _ SGS-THOMSON LK3TOKS ¿ 5 7 STH8N80/FI STW8N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V STH8N80 STH8N 80FI STW 8N80 ■ . ■ . . . ■ dss 800 V 800 V 800 V RDS on Id
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7T2t1237
STH8N80/FI
STW8N80
STH8N80
STH8N80FI
STW8N80
7R21E37
0D45TDb
STH8N80/FI-STW8N80
gc212
C18070
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Untitled
Abstract: No abstract text available
Text: OM65Û5SA OM65Q6SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability
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OCR Scan
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OM65Q6SA
O-254AA
MIL-S-19500,
OM65Q5SA
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PDF
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53N05
Abstract: STP53N05
Text: • £Z7 7^2^237 GDMbSll T T3 M S f i T H _ S G S -T H O M S O N [ œ ô jO T ô * S STP 53 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP53N05 . . ■ . . . . . V R D S (o n Id < 0.025 Í2 53 A dss 50 V TYPIC A L RDS(on) = 0.022 Q
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STP53N05
7T2T237
004b517
53N05
STP53N05
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PDF
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Untitled
Abstract: No abstract text available
Text: OM6505SA OM65Q6SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt. 15 A n d 20 A m p , N - C h a n n e l IGBT In A H e r m e t i c Metal P a c k a g e FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage
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OCR Scan
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OM6505SA
OM65Q6SA
O-254AA
MIL-S-19500,
OM65Q6SA
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PDF
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9816A
Abstract: IRFV360 K11S
Text: Data Sheet No. PD-9.816A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV36Q :n N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Part Number BV q s s RDS on
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IRFV3600
IRFV360U
O-258
MIL-S-19SM
9816A
IRFV360
K11S
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PDF
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buz 71
Abstract: No abstract text available
Text: SIEMENS BUZ 71 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 71 Vbs 50 V b 14 A flbs<on 0.1 a Package Ordering Code TO-220 AB C67078-S1316-A2 Maximum Ratings Parameter Symbol Continuous drain current
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OCR Scan
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O-220
C67078-S1316-A2
buz 71
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PDF
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Untitled
Abstract: No abstract text available
Text: OM651OSC OM6511SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 500 Volt. 20 A n d 30 A m p , N - C h a n n e l IG B T W ith a Soft R ec o v ery Diode In A H e r m e t i c Metal P a c k a g e FEATURES • • • • • • • •
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OCR Scan
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OM651OSC
OM6511SC
O-258AA
MIL-S-19500,
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PDF
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