FMM5049
Abstract: S-Band Power Amplifier S-Band high Power Amplifier S-band mmic MMIC POWER AMPLIFIER S-BAND FMM5049VT MMIC s-band amplifier
Text: FMM5049VT L,S-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=41.0dBm typ. ・High Linear Gain: GL=33.0dB (typ.) ・Broad Band: 1.8~2.3GHz ・Hermetically sealed Package DESCRIPTION The FMM5049VT is a high-gain wide-band three-stage MMIC amplifier
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FMM5049VT
FMM5049VT
FMM5049
S-Band Power Amplifier
S-Band high Power Amplifier
S-band mmic
MMIC POWER AMPLIFIER S-BAND
MMIC s-band amplifier
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S858TA3
Abstract: 1s858
Text: S 858 TA3 TELEFUNKEN Semiconductors Cascadable Silicon Bipolar MMIC Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose 50 W gain block for narrow and broad band IF and RF amplifiers in commercial and industrial
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D-74025
S858TA3
1s858
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs MMIC b S HT ö S T DDl ñOTO ÛGS MGF7121 1.9GHz BAND AMPLIFIER MMIC DESCRIPTION OUTLINE DRAWING MGF7121 is a monolithic microwave integrated circuit for use in Unit:millimeters 1,9GHz band power amplifiers. FEATURES • H igh output power
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MGF7121
MGF7121
22dBm,
600kHz)
900kHz)
22dBm
22dBm
-16dBm
600kHz,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC b24'ifl2T 001 fl0^3 S U MGF7132P 1.9GHz BAND AMPLIFIER MMIC DESCRIPTION MQF7132P is a monolithic microwave integrated circuit for use in OUTLINE DRAWING UrWmlllimeteis 1.9GHz band power amplifiers. FEATURES •H ig h output power
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MGF7132P
MQF7132P
21dBm
600kHz)
900kHz)
600kHz,
900kHz,
190mA
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5212 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High
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MGFC5212
MGFC5212
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5213 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High
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MGFC5213
MGFC5213
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs MMIC D o l a o s tas MGF7124A 1.9GHz BAND AMPLIFIER MMIC DESCRIPTION MGF7124A is a monolithic microwave integrated circuit for use in 1.9GHz band power amplifiers. FEATURES • H igh output power Po=26dBm,7t/4DQPSK •Sm a ll size
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MGF7124A
MGF7124A
26dBm
600kHz)
600kHz,
900kHz,
900kHz)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High
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MGFC5211
MGFC5211
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MMIC cross
Abstract: No abstract text available
Text: SILICON MMIC NEC UPC1685B/G PRELIMINARY Wide-Band Mixer/Oscillator MMIC FE A TU R E S P H Y S IC A L D IM E N S IO N S Units in mm • WIDE-BAND OPERATION: DC to 890 MHz UPC1685B • SMALL PACKAGE • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation
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UPC1685B/G
UPC1685B
UPC1685
UPC1685B/G,
34-6393/FAX
NQTICE-509
5M-5/88
MMIC cross
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LNA ka-band
Abstract: MITSUBISHI CAPACITOR
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band
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MGFC5109
MGFC5109
LNA ka-band
MITSUBISHI CAPACITOR
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vD1A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band
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MGFC5108
MGFC5108
100pF
vD1A
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ka-band amplifier
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The M GFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band
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MGFC5110
GFC5110
100pF
ka-band amplifier
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5218 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5218 is a GaAs MMIC chip especially
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MGFC5218
MGFC5218
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip
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MGFC5107
MGFC5107
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5108 is a GaAs MMIC chip
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MGFC5108
MGFC5108
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5109 is a GaAs MMIC chip
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MGFC5109
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Untitled
Abstract: No abstract text available
Text: bEMSf lST DQlflD'lS 3^4 • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7134P -rv«s' « * * •« ate suW H ^ 2 ta m ^ wriW s""0” 1.90GHz BAND RX^X FRONT-END GaAs MMIC DESCRIPTION MGF7134P is a monolithic microwave integrated circuit for PHS OUTLINE DRAWING
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MGF7134P
90GHz
MGF7134P
55dBc
240MHz)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5214 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Q-Band 2-Stage Power Am plifier DESCRIPTION BLOCK DIAGRAM The MGFC5214 is a GaAs MMIC chip especially
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MGFC5214
MGFC5214
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Untitled
Abstract: No abstract text available
Text: E AWT918 TX POWER MMIC h m p iG ic s ' A dvanced Product Information Your GaAs IC Source RevO CELLULAR/PCS Dual Band GaAs Power Amplifier 1C DESCRIPTION: The AWT918 is a monolithic GaAs Power Amplifier. It can be used in the following dual band handset applications:GSM900/DCS1800,
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AWT918
AWT918
GSM900/DCS1800,
GSM900/GSM1900
AMPS/GSM1900.
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Z311
Abstract: MGF7104
Text: MITSUBISHI D IS CR ET E SC blE ]> □ □ m cÎD2 TME • H I T S ^ Amitsubishi GaAs MMIC MGF7100 SERIES ELECTRONIC DEVICE GROUP 900MHz Band GaAs Power Amplifier IC DESCRIPTION PIN CONFIGURATION (TOP VIEW) MGF7100 Series are monolithic microwave integrated circuits for use in 900MHz band
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MGF7100
900MHz
200mA
Z311
MGF7104
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Am plifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5110 is a GaAs MMIC chip
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MGFC5110
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Untitled
Abstract: No abstract text available
Text: AWT924S10 TX POW ER MMIC Advanced Product Information Rev. 1 G SM /DCS DUAL BAND GaAs POW ER AM PLIFIER IC DESCRIPTION The A W T924 is a monolithic G a A s Power Amplifier. It can be used in the following dual band handset applications: G SM 900/D C S1800.
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AWT924S10
900/D
S1800.
l4S77
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AC141-00
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT920 TX POWER MMIC Advanced Product Information Rev 0 900/1900 MHz Dual Band A M P S /P C S GaAs Power Amplifier IC DESCRIPTION: The AWT920 is a highly integrated GaAs monolithic Power Amplifier suited for both AMPS 824 - 849
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AWT920
AWT920
BLM1A800SPB
oure--22------J
BLM1A800SPB
BLM31A700SPB
AC141-00
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UPG100B
Abstract: UPG100 UPG100P power amplifier s band ghz mhz Low Noise Amplifier 0.5 - 3.0 GHz
Text: I NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 + 0.1 • LOW IMOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz Units in mm 1.27 ± 0-1 0 A {LEAD S 1,3,5,7)
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UPG100B
3260Jay
UPG100
UPG100P
power amplifier s band ghz mhz
Low Noise Amplifier 0.5 - 3.0 GHz
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