Contextual Info: I ^ NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES Units in mm UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 ± 0.1 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz (LEADS 2,4,6,8) 0.6 1.27 + 0.1

UPG100A

Abstract: UPG100 UPG100B UPG100P
Contextual Info: SEC LOW NOISE WIDE-BAND AMPLIFIER OUTLINE DIM ENSIONS FEATURES UPG100A UPG100B UPG100P Units in mm OUTLINE B08 • U L T R A W ID E B A N D : 50 M H z to 3 G H z 1 .2 7 * 0.1 1.27 ± 0.1 • L O W N O IS E : 2 .7 d B T Y P at f = 50 M H z to 3 G H z ).4 (LEADS 1,3.5,7)

Contextual Info: LOW NOISE WIDE-BAND AMPLIFIER i UPG100B UPG100P FEATURES POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Q • HERMETIC SEALED PACKAGE ASSURES HIGH

Contextual Info: NEC UPG100A UPG100B UPG100P LOW NOISE WIDE-BAND AMPLIFIER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE B08 • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27+0.1 1.27±0.1 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz (LEADS 2.4,6.8) 0.6 • _0.4 (LEADS 1.3.5,7)

Contextual Info: NEC LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG100P FEATURES P O W ER G A IN A N D N O IS E F IG U R E vs. F R E Q U E N C Y • ULTRA WIDE BAND: 50 MHz to 3 GHz . LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Q • HERMETIC SEALED PACKAGE ASSURES HIGH

UPG100

Abstract: UPG100B UPG100P ausi die attach
Contextual Info: LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG100P FEATURES POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz • HERMETIC SEALED PACKAGE ASSURES HIGH RELIABILITY • WIDE OPERATING TEMPERATURE RANGE

Contextual Info: G a A s Monolithic Circuits Wideband Amplifiers Frequency Teat Gain Range Conditions dB AG (dB) RU n R L out (dB) TYP ISOL (dB) TYP P*fl- Pacta 99 FaxOn Demand TYP MAX TYP MIN (mA) TYP MAX (dB) TYP UPG100B 0.05 to 3.0 V dd = +5V V gg = -5V 16 ±1.5 2.7 +6

UPG100

Abstract: UPG100B UPG100P
Contextual Info: LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG100P FEATURES POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz • HERMETIC SEALED PACKAGE ASSURES HIGH RELIABILITY • WIDE OPERATING TEMPERATURE RANGE

UPG100B

Abstract: UPG100 UPG100P power amplifier s band ghz mhz Low Noise Amplifier 0.5 - 3.0 GHz
Contextual Info: I NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 + 0.1 • LOW IMOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz Units in mm 1.27 ± 0-1 0 A {LEAD S 1,3,5,7)

TI05D

Contextual Info: LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG100P FEATURES_ POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 f ì • HERMETIC SEALED PACKAGE ASSURES HIGH

Contextual Info: LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG1 OOP FEATURES POWER GAIN AND NOISE FIGURE VS. FREQUENCY ULTRA W IDE BAND: 50 MHz to 3 GHz 10 LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz INPUT/OUTPUT IMPEDANCE MATCHED TO 50 f t HERMETIC SEALED PACKAGE ASSURES HIGH

UPG101

Abstract: UPG100B UPG101B UPG101P
Contextual Info: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • MEDIUM POWER: TYP P1dB = +18 dBm at f = 50 MHz to 3 GHz • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY

Contextual Info: SEC 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES ABSOLUTE MAXIMUM RATINGS • W ID E -B A N D : 2 to 8 G H z SYMBOLS PAR AM ETERS Ta = 25 ° g U N IT S R A T IN G S • H IG H G A IN : 15 dB T Y P at f = 2 to 8 G H z V dd Drain Voltage V + 10 • M E D IU M P O W E R : + 14 d B m T Y P @ f = 2 to 8 G H z

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic

TC 4863 DB

Contextual Info: 2-8 GHz WIDE-BAND AMPLIFIER FEATURES_ GAIN vs. FREQUENCY AND TEMPERATURE • W IDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz • INPUT/OUTPUT IM PEDANCE MATCHED TO 50 Q

PT 4863

Abstract: diode gp 421 101P 103P UPG100P UPG110 UPG110B UPG110P
Contextual Info: UPG110B UPG110P 2-8 GHz WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY AND TEMPERATURE FEATURES • WIDE-BAND: 2 to 8 GHz 20 • HIGH GAIN: 15 dB at f = 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY

Contextual Info: 2-8 GHz WIDE-BAND AMPLIFIER UPG110P GAIN vs. FREQUENCY AND TEMPERATURE FEATURES WIDE-BAND: 2 to 8 GHz HIGH GAIN: 15 dB at f = 2 to 8 GHz MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz INPUT/OUTPUT IMPEDANCE MATCHED TO 50 O œ HERMETICALLY SEALED PACKAGE ASSURES HIGH

101P

Abstract: 103P UPG100P UPG110B UPG110P ausi die attach
Contextual Info: NEC 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES ABSOLUTE MAXIMUM RATINGS u - 25°c> • W IDE-BAND: 2 to 8 GHz SYMBO LS • HIG H GAIN: 15 dB TYP at f = 2 1o 8 GHz • M EDIUM POWER: + 14 dBm TYP @ f = 2 to 8 GHz • IN P U T /O U TP U T IM PEDAN CE M ATCHED TO 50 i l

C1678

Abstract: c1677 UPC1678B UPG100B uPG101 MARKING 106 UPG101B G100 G101 G103
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. B08 1.27±0.1 1.27±0.1 LEADS 2, 4, 6, 8 0.6 0.4 (LEADS 1, 3, 5, 7) 4 3 2 MARKING 10.6 MAX 1 5 3.8±0.2 6 7 8 3.8±0.2 10.6 MAX 1.7 MAX

NEC Ga FET marking L

Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Contextual Info: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima

Contextual Info: 2-8 GHz WIDE-BAND AMPLIFIER FEATURES_ UPGIIOP GAIN vs. FREQUENCY AND TEMPERATURE • WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f - 2 to 8 GHz • MEDIUM POWER: +14 dBm TYP at f - 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 O

prescaler 120 ghz

Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V

Contextual Info: LOW CURRENT 2-8 GHz WIDE-BAND AMPLIFIER UPG110B-L UPG110P-L NOT RECOMMENDED FOR NEW DESIGN FEATURES_ POWER GAIN vs. FREQUENCY . LOW CURRENT: 60 mA TYP • WIDE-BAND: 2 to 8 GHz VDC - 8 \ / 100 - 6 0 nA • HIGH GAIN: 13 dB at f = 2 to 8 GHz