Contextual Info: SEC 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES ABSOLUTE MAXIMUM RATINGS • W ID E -B A N D : 2 to 8 G H z SYMBOLS PAR AM ETERS Ta = 25 ° g U N IT S R A T IN G S • H IG H G A IN : 15 dB T Y P at f = 2 to 8 G H z V dd Drain Voltage V + 10 • M E D IU M P O W E R : + 14 d B m T Y P @ f = 2 to 8 G H z

UPG110B

Abstract: PT 4863 103P UPG100P UPG110 UPG110P 101P
Contextual Info: UPG110B UPG110P 2-8 GHz WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY AND TEMPERATURE FEATURES • WIDE-BAND: 2 to 8 GHz 20 • HIGH GAIN: 15 dB at f = 2 to 8 GHz 15 • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY

Contextual Info: £ lásfl NEC LOW C U R R E N T 2-8 GHz W ID E-B A N D A M P LIF IER UPG110B-L UPG110P-L FEATURES PRELIM IN A R Y A BSO LU TE M A X IM U M RiATINGS Ta = 25°C • LOW CU R R E N T : 60 m A TYP SYM BO LS P A R A M ET ER S UNITS RATINGS V dd V in P in Pt Tc

PT 4863

Abstract: diode gp 421 101P 103P UPG100P UPG110 UPG110B UPG110P
Contextual Info: UPG110B UPG110P 2-8 GHz WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY AND TEMPERATURE FEATURES • WIDE-BAND: 2 to 8 GHz 20 • HIGH GAIN: 15 dB at f = 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY

101P

Abstract: 103P UPG100P UPG110B UPG110P ausi die attach
Contextual Info: NEC 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES ABSOLUTE MAXIMUM RATINGS u - 25°c> • W IDE-BAND: 2 to 8 GHz SYMBO LS • HIG H GAIN: 15 dB TYP at f = 2 1o 8 GHz • M EDIUM POWER: + 14 dBm TYP @ f = 2 to 8 GHz • IN P U T /O U TP U T IM PEDAN CE M ATCHED TO 50 i l

Contextual Info: LOW CURRENT 2-8 GHz WIDE-BAND AMPLIFIER UPG110B-L UPG110P-L NOT RECOMMENDED FOR NEW DESIGN FEATURES_ POWER GAIN vs. FREQUENCY . LOW CURRENT: 60 mA TYP • WIDE-BAND: 2 to 8 GHz VDC - 8 \ / 100 - 6 0 nA • HIGH GAIN: 13 dB at f = 2 to 8 GHz

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

marking 34

Abstract: G110 UPG110B
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. FA 4.5 MAX LEAD 1 & 3 0.6 ± 0.06 3 2 4.6 MAX 4 MARKING 4.1 MIN +0.2 0.7 -0.1 4.1 MIN 1 LEAD 2 & 4 0.4 ± 0.06 1.48 MAX 0.1 ± 0.06 PART NUMBER

Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic

TC 4863 DB

Contextual Info: 2-8 GHz WIDE-BAND AMPLIFIER FEATURES_ GAIN vs. FREQUENCY AND TEMPERATURE • W IDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz • INPUT/OUTPUT IM PEDANCE MATCHED TO 50 Q

Contextual Info: G a A s Monolithic Circuits Wideband Amplifiers Frequency Teat Gain Range Conditions dB AG (dB) RU n R L out (dB) TYP ISOL (dB) TYP P*fl- Pacta 99 FaxOn Demand TYP MAX TYP MIN (mA) TYP MAX (dB) TYP UPG100B 0.05 to 3.0 V dd = +5V V gg = -5V 16 ±1.5 2.7 +6

Contextual Info: 2-8 GHz WIDE-BAND AMPLIFIER UPG110P GAIN vs. FREQUENCY AND TEMPERATURE FEATURES WIDE-BAND: 2 to 8 GHz HIGH GAIN: 15 dB at f = 2 to 8 GHz MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz INPUT/OUTPUT IMPEDANCE MATCHED TO 50 O œ HERMETICALLY SEALED PACKAGE ASSURES HIGH

Contextual Info: 2-8 GHz WIDE-BAND AMPLIFIER FEATURES_ UPGIIOP GAIN vs. FREQUENCY AND TEMPERATURE • WIDE-BAND: 2 to 8 GHz • HIGH GAIN: 15 dB at f - 2 to 8 GHz • MEDIUM POWER: +14 dBm TYP at f - 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 O

prescaler 120 ghz

Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V

L3010

Abstract: UPG110B
Contextual Info: 2-8 GHz WIDE-BAND AMPLIFIER ~ p ~ ^ jj“ POWER GAIN vs. FREQUENCY FEATURES_ • WIDE-BAND: 2 to 8 GHz VDO - 8 ' / IDD • 6 0 tiA • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWER : +14 dBm TYP at f = 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Si