Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MODEL 657 Search Results

    MODEL 657 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TPS6508700RSKR Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments
    TPS6508700RSKT Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments Buy

    MODEL 657 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MODEL 657 Vishay Industrial Rotary Position Sensor Original PDF

    MODEL 657 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Engineering Development Model Voltage Controlled Oscillator ROS-EDR4979/2 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a


    Original
    PDF CK605 ROS-EDR4979/2 ROS-EDR4979/2

    SiB488DK

    Abstract: No abstract text available
    Text: SPICE Device Model SiB488DK Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SiB488DK 18-Jul-08

    Si7143DP

    Abstract: 26 258
    Text: SPICE Device Model Si7143DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si7143DP 18-Jul-08 26 258

    65750

    Abstract: No abstract text available
    Text: SPICE Device Model SiB455EDK Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SiB455EDK 18-Jul-08 65750

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA406DJ Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SiA406DJ 18-Jul-08

    14051

    Abstract: VLF4012AT-6R8MR96 VLF4010S VLF4012AT-2R2M1R5 VLF4014ST-2R2M1R9 16174 VLF4012AT-100MR50-2 VLF4010AT-4R7M1R0 VLF4010ST-3R3M1R2 12629
    Text: TDK Equivalent Circuit Model Library Jan. 13, 2009 Model Type: Simple Model Inductors / VLF4010A Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] VLF4010AT-4R7M1R0 4.7 5992.5 1.3652 0.18 VLF4010AT-6R8MR81 6.8 8330.6 1.3636 0.28


    Original
    PDF VLF4010A VLF4010AT-4R7M1R0 VLF4010AT-6R8MR81 VLF4010AT-100MR64 VLF4010S VLF4010ST-1R0N1R9 VLF4010ST-2R2M1R4 VLF4010ST-3R3M1R2 VLF4014AT-4R7M1R1 VLF4014AT-100MR90 14051 VLF4012AT-6R8MR96 VLF4012AT-2R2M1R5 VLF4014ST-2R2M1R9 16174 VLF4012AT-100MR50-2 VLF4010AT-4R7M1R0 VLF4010ST-3R3M1R2 12629

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB406EDK Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SiB406EDK 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB488DK www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SiB488DK 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SLF12575-H

    Abstract: SLF12555T-680M1R3 SLF12565T-100M4R8-H SLF12565T-331MR87-H SLF12575T-331M1R0-PF SLF12565T-101M1R6-PF SLF12575T-100M5R4 SLF12575T-330M3R2-H SLF12565-H 106603
    Text: TDK Equivalent Circuit Model Library Jan. 13, 2009 Model Type: Simple Model Inductors / SLF12555 Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] SLF12555T-6R0N3R6-PF 6 7248.8 5.5282 0.0164 SLF12555T-100M3R4-PF 10 9944.8 3.9877


    Original
    PDF SLF12555 SLF12555T-6R0N3R6-PF SLF12555T-100M3R4-PF SLF12555T-150M2R8-PF SLF12555T-220M2R3-PF SLF12555T-330M1R9-PF SLF12555T-470M1R6-PF SLF12555T-680M1R3-PF SLF12555T-101M1R1-PF SLF12555T-151MR88-PF SLF12575-H SLF12555T-680M1R3 SLF12565T-100M4R8-H SLF12565T-331MR87-H SLF12575T-331M1R0-PF SLF12565T-101M1R6-PF SLF12575T-100M5R4 SLF12575T-330M3R2-H SLF12565-H 106603

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB406EDK www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SiB406EDK 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    siA975

    Abstract: SIA975DJ DSA00206566
    Text: SPICE Device Model SiA975DJ Vishay Siliconix Dual P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SiA975DJ 18-Jul-08 siA975 DSA00206566

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA406DJ www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    PDF SiA406DJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA906EDJ www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original
    PDF SiA906EDJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7143DP www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si7143DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    HP 3458

    Abstract: 5500A LCD 1604A HP 3458a 3458a Fluke 73 Multimeter 800893 elastomeric FLUKE 75 Fluke Multimeter repair
    Text: Model 705 Loop Calibrator Calibration Information W Warning To avoid electrical shock, remove test leads and any input signals from the Model 705 Loop Calibrator before opening the case. Caution The Model 705 Loop Calibrator contains parts that can be damaged by static


    Original
    PDF IEC6LR61 HP 3458 5500A LCD 1604A HP 3458a 3458a Fluke 73 Multimeter 800893 elastomeric FLUKE 75 Fluke Multimeter repair

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQ1470AEH www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    PDF SQ1470AEH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUM25P10-138 www.vishay.com Vishay Siliconix P-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    PDF SUM25P10-138 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4420DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4420DY 09-May-02

    V5805

    Abstract: sup90n04-4m0p
    Text: SPICE Device Model SUP90N04-4m0P Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF SUP90N04-4m0P 18-Jul-08 V5805 sup90n04-4m0p

    A 69157

    Abstract: 69157 mosfet 69157 V5805 SUM90N04-3m4P S-71488 S-71488Rev A7255
    Text: SPICE Device Model SUM90N04-3m4P Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF SUM90N04-3m4P 18-Jul-08 A 69157 69157 mosfet 69157 V5805 SUM90N04-3m4P S-71488 S-71488Rev A7255

    Si4420DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4420DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Model 6573A Alligator Clip IEC 1010 With Boot 1000V CAT III 10A FEATURES: • Alligator Clip will attach to terminals up to .30” outside diameter. • Designed to comply to International Safety Standard IEC 1010 • Adapts to sheathed banana plug test leads such as Pomona Model 5908A


    Original
    PDF 573A-* \d6573A

    Untitled

    Abstract: No abstract text available
    Text: Model 6573A Alligator Clip With Boot for sheathed banana plug, .166” 4mm (banana plug not included) FEATURES: Complies with International Safety Standard IEC 1010-2-031 Alligator will clip around terminals up to .30” (7,62mm) outside diameter. Attaches to standard .166” (4mm) sheathed banana plugs, such as Pomona model 5907A test leads.


    Original
    PDF 573A-0 573A-2 573A-02 Tolera490-2361 D1096779

    Untitled

    Abstract: No abstract text available
    Text: V1SHAY Numerical Index Vishay Spectrol MODEL NUMBER. PAGE NO MODEL NUMBER. PAGE NO 3 H . 10 159. 62


    OCR Scan
    PDF