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    SIB406EDK Price and Stock

    Vishay Siliconix SIB406EDK-T1-GE3

    MOSFET N-CH 20V 6A PPAK SC75-6
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    DigiKey SIB406EDK-T1-GE3 Digi-Reel 1,873 1
    • 1 $0.84
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    SIB406EDK-T1-GE3 Cut Tape 1,873 1
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    SIB406EDK-T1-GE3 Reel 3,000
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    RS SIB406EDK-T1-GE3 Bulk 20
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    Vishay Intertechnologies SIB406EDK-T1-GE3

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIB406EDK-T1-GE3)
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    Avnet Americas SIB406EDK-T1-GE3 Reel 16 Weeks 3,000
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    Mouser Electronics SIB406EDK-T1-GE3 20,004
    • 1 $0.82
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    Newark SIB406EDK-T1-GE3 Reel 3,000
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    SIB406EDK-T1-GE3 Cut Tape 3,000
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    TTI SIB406EDK-T1-GE3 Reel 6,000 3,000
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    TME SIB406EDK-T1-GE3 3,000
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    Chip One Stop SIB406EDK-T1-GE3 Cut Tape 295
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    EBV Elektronik SIB406EDK-T1-GE3 6,000 17 Weeks 3,000
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    New Advantage Corporation SIB406EDK-T1-GE3 6,000 1
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    • 10000 $0.3955
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    SIB406EDK Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIB406EDK-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 6A SC-75-6 Original PDF

    SIB406EDK Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB406EDK Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiB406EDK 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    64707

    Abstract: 8844 1.4136 AN609
    Text: SiB406EDK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		SiB406EDK AN609, 16-Dec-08 64707 8844 1.4136 AN609 PDF

    SC-75

    Abstract: No abstract text available
    Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiB406EDK SC-75 SC-75-6L-Single SiB406EDK-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiB406EDK www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiB406EDK 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiB406EDK SC-75 SC-75-6L-Single SiB40electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiB406EDK SC-75 SC-75-6L-Single SiB406EDK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiB406EDK SC-75 SC-75-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiB406EDK SC-75 SC-75-6L-Single SiB406EDK-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance PowerPAK SC-75 Ultra-Low On-Resistance, and Ultra-Small Size Key features • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with


    Original     		SC-75 SC-75 SC-75, appli32 SiB437EDKT SiB441EDK SiB457EDK SiB433EDK SiB914DK SiB912DK PDF

    SiB914

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance AND TEC I INNOVAT O L OGY PowerPAK SC-75 N HN POWER MOSFETs O 19 62-2012 Ultra-Low On-Resistance, and Ultra-Small Size KEY FEATURES • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with


    Original     		SC-75 SC-75 SC-75, space-const19 com/mosfets/powerpak-sc-75-package/ VMN-PT0196-1209 SiB914 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF