00bf mosfet
Abstract: No abstract text available
Text: bq2024 Actual Size 3,00 mm x 3,00 mm www.ti.com SLUS770 – MAY 2007 1.5K-BIT SERIAL EPROM WITH SDQ INTERFACE FEATURES • • • • • • • • • • • DESCRIPTION 1536 Bits of One-Time Programmable (OTP) EPROM For Storage Of User-Programmable
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bq2024
SLUS770
64-Bit
bq2024
bq2022A
00bf mosfet
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Untitled
Abstract: No abstract text available
Text: bq2024 Actual Size 3,00 mm x 3,00 mm www.ti.com SLUS770 – MAY 2007 1.5K-BIT SERIAL EPROM WITH SDQ INTERFACE FEATURES • • • • • • • • • • • DESCRIPTION 1536 Bits of One-Time Programmable (OTP) EPROM For Storage Of User-Programmable
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bq2024
SLUS770
64-Bit
bq2024
bq2022A
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15KV
Abstract: bq2022A bq2024 bq2024DBZR bq2024LPR
Text: bq2024 Actual Size 3,00 mm x 3,00 mm www.ti.com SLUS770 – MAY 2007 1.5K-BIT SERIAL EPROM WITH SDQ INTERFACE FEATURES • • • • • • • • • • • DESCRIPTION 1536 Bits of One-Time Programmable (OTP) EPROM For Storage Of User-Programmable
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bq2024
SLUS770
64-Bit
bq2024
bq2022A
15KV
bq2024DBZR
bq2024LPR
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15KV
Abstract: bq2022A bq2024 bq2024DBZR bq2024LPR 00BF sot 23 00bf mosfet
Text: bq2024 Actual Size 3,00 mm x 3,00 mm www.ti.com SLUS770 – MAY 2007 1.5K-BIT SERIAL EPROM WITH SDQ INTERFACE FEATURES • • • • • • • • • • • DESCRIPTION 1536 Bits of One-Time Programmable (OTP) EPROM For Storage Of User-Programmable
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bq2024
SLUS770
64-Bit
bq2024
bq2022A
15KV
bq2024DBZR
bq2024LPR
00BF sot 23
00bf mosfet
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mosfet 00BF
Abstract: 00A0-00BF 00bf mosfet
Text: bq2024 Actual Size 3,00 mm x 3,00 mm www.ti.com SLUS770 – MAY 2007 1.5K-BIT SERIAL EPROM WITH SDQ INTERFACE FEATURES • • • • • • • • • • • DESCRIPTION 1536 Bits of One-Time Programmable (OTP) EPROM For Storage Of User-Programmable
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bq2024
SLUS770
64-Bit
bq2024
bq2022A
mosfet 00BF
00A0-00BF
00bf mosfet
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00BF sot 23
Abstract: No abstract text available
Text: bq2024 Actual Size 3,00 mm x 3,00 mm www.ti.com SLUS770 – MAY 2007 1.5K-BIT SERIAL EPROM WITH SDQ INTERFACE FEATURES • • • • • • • • • • • DESCRIPTION 1536 Bits of One-Time Programmable (OTP) EPROM For Storage Of User-Programmable
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bq2024
SLUS770
64-Bit
bq2024
bq2022A
00BF sot 23
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00bf mosfet
Abstract: bq2022A bq2024 bq2024DBZR bq2024LPR 15KV
Text: bq2024 Actual Size 3,00 mm x 3,00 mm www.ti.com SLUS770 – MAY 2007 1.5K-BIT SERIAL EPROM WITH SDQ INTERFACE FEATURES • • • • • • • • • • • DESCRIPTION 1536 Bits of One-Time Programmable (OTP) EPROM For Storage Of User-Programmable
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bq2024
SLUS770
64-Bit
bq2024
bq2022A
00bf mosfet
bq2024DBZR
bq2024LPR
15KV
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00BF sot 23
Abstract: mosfet 00BF 15KV bq2022A bq2024 bq2024DBZR bq2024LPR
Text: bq2024 Actual Size 3,00 mm x 3,00 mm www.ti.com SLUS770 – MAY 2007 1.5K-BIT SERIAL EPROM WITH SDQ INTERFACE FEATURES • • • • • • • • • • • DESCRIPTION 1536 Bits of One-Time Programmable (OTP) EPROM For Storage Of User-Programmable
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bq2024
SLUS770
64-Bit
bq2024
bq2022A
00BF sot 23
mosfet 00BF
15KV
bq2024DBZR
bq2024LPR
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16c72a
Abstract: P16C72A 1F04 AN701 5v power supply using lm7805 with bridge rectifier 5V power supply using LM7805 and bridge rectifier scl 1003 28E4
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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AN701
PIC16C72A
PIC16C72A
PIC16C72
DS00701A-page
16c72a
P16C72A
1F04
AN701
5v power supply using lm7805 with bridge rectifier
5V power supply using LM7805 and bridge rectifier
scl 1003
28E4
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16c72a
Abstract: 5v power supply using lm7805 with bridge rectifier 393f AN701 A 393F inductor 100uH p16c72a 28E8 1uf/35v 3C50
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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AN701
PIC16C72A
PIC16C72A
PIC16C72
16c72a
5v power supply using lm7805 with bridge rectifier
393f
AN701
A 393F
inductor 100uH
p16c72a
28E8
1uf/35v
3C50
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Untitled
Abstract: No abstract text available
Text: bq2024 Actual Size 3,00 mm x 3,00 mm www.ti.com SLUS770 – MAY 2007 1.5K-BIT SERIAL EPROM WITH SDQ INTERFACE Check for Samples: bq2024 FEATURES DESCRIPTION • The bq2024 is a 1.5K-bit serial EPROM containing a factory-programmed, unique 48-bit identification
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bq2024
SLUS770
64-Bit
bq2024
bq2022A
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16c72a
Abstract: DS275 P16C72A 16C72 1uf/35v A 393F buck converter with dsPIC KI 78L05 PID control dsPIC PID control dsPIC DC motor
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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AN701
PIC16C72A
PIC16C72A
PIC16C72
D-81739
16c72a
DS275
P16C72A
16C72
1uf/35v
A 393F
buck converter with dsPIC
KI 78L05
PID control dsPIC
PID control dsPIC DC motor
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Understanding Small Microcontrollers
Abstract: 511 MOSFET TRANSISTOR motorola bel 187 transistor dwa 108 a M68HC05 microcontroller pacemaker dwa 108 MC68HC16Y1 TRANSISTOR BC 187 00FF
Text: M68HC05TB/D Rev. 2.0 HC 5 M68HC05 Family Understanding Small Microcontrollers Acknowledgment James M. Sibigtroth, a principal member of the technical staff at Motorola, is author of this text book. He is based in Austin, Texas. The author wishes to acknowledge Gordon Doughman for
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M68HC05TB/D
M68HC05
Understanding Small Microcontrollers
511 MOSFET TRANSISTOR motorola
bel 187 transistor
dwa 108 a
microcontroller pacemaker
dwa 108
MC68HC16Y1
TRANSISTOR BC 187
00FF
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M68HC05TB
Abstract: DIODE Z1 04 833 motorola internal diagram of 76810 transistor equivalents for bel 187 dwa 108 dwa 108 a bel 187 transistor FTH A 001 26 10 MC68HC16Y1 TIC 122 Transistor datasheet
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. M68HC05TB/D Rev. 2.0 HC 5 M68HC05 Family Understanding Small Microcontrollers For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc.
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M68HC05TB/D
M68HC05
M68HC05TB
DIODE Z1 04 833 motorola
internal diagram of 76810
transistor equivalents for bel 187
dwa 108
dwa 108 a
bel 187 transistor
FTH A 001 26 10
MC68HC16Y1
TIC 122 Transistor datasheet
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CRC16
Abstract: DS1963 DS1963S DS9092 DS9093A DS9093RA DS9096P DS9101
Text: PRELIMINARY DS1963S SHA iButtonTM www.dalsemi.com Button shape is self-aligning with cupshaped probes Durable stainless steel case engraved with registration number withstands harsh environments Easily affixed with self-stick adhesive backing, latched by its flange, or locked with
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DS1963S
64-bit
32-bit
CRC16
DS1963
DS1963S
DS9092
DS9093A
DS9093RA
DS9096P
DS9101
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CRC16
Abstract: DS1963 DS1963S DS9092 DS9093A DS9093RA DS9096P DS9101 iButton 30060h
Text: DS1963S SHA iButton www.iButton.com SPECIAL FEATURES § § § § § § § § § § 4096 bits of read/write nonvolatile NV memory organized as 16 pages of 256 bits each Eight memory pages with individual 64-bit secrets and 32-bit read-only non rolling-over
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DS1963S
64-bit
32-bit
512-bit
160bit
16-bit
DS1963S
CRC16
DS1963
DS9092
DS9093A
DS9093RA
DS9096P
DS9101
iButton
30060h
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mosfet marking code gg
Abstract: marking g1s marking code g1s
Text: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television
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711002b
BF997
OT143
mosfet marking code gg
marking g1s
marking code g1s
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SSH6N80
Abstract: ssh-6n80 SSH6N70
Text: N-CHANNEL POWER MOSFETS SSH6N80/70 FEATURES • Lower Rdsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tem perature reliability
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SSH6N80/70
SSH6N80
SSH6N70
ssh-6n80
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free transistor bs 200
Abstract: marking BS mosfet FET MARKING CODE BF991 G2S-50 transistor BF991
Text: I • 711008b 00bß7Q5 MTS H P H I N BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended fo r use in v.h.f. applications, such as v.h.f.
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711008b
BF991
OT143
OT103
free transistor bs 200
marking BS mosfet
FET MARKING CODE
BF991
G2S-50
transistor BF991
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BF990A
Abstract: F990A c 626
Text: 711GB2L. □Dböb'n 371 IPHIN BF990A SILICON N-CHANNEL DUAL GATE MOS-FET D e ple tio n ty p e field -e ffe ct tra nsistor in a plastic S O T 1 4 3 m icro m in ia tu re envelope w ith source and substrate interconnected, intended fo r U H F ap plications, such as U H F television tuners w ith 12 V
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BF990A
OT143
ApriM991
BF990A
F990A
c 626
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Untitled
Abstract: No abstract text available
Text: 7 UDÖEL. QDt.a?lb EflO HIPHIN BF996S SILICON N-CHANNEL DUAL GATE MOS-FET D ep letio n ty p e fie ld -e ffe c t transistor in a plastic S O T 1 4 3 m icro m in ia tu re envelope w ith source and substrate interconnected and intended fo r U H F applications in television tuners.
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BF996S
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P12N60C3
Abstract: P12N60C C110 HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 S12N60C3 TA49123 transistor bI 240
Text: HARRIS HGTP12N60C3, HGT1S12N60C3, S E M , HGT1S12N60C3S C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT October 1996 Features Description • 24A, 600V at Tc = 25°C The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the
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HGTP12N60C3,
HGT1S12N60C3,
HGT1S12N60C3S
230ns
HGTP12N60C3
T0-220AB
P12N60C3
HGT1S12N60C3
O-262AA
S12N60C3
P12N60C3
P12N60C
C110
HGT1S12N60C3S
HGT1S12N60C3S9A
S12N60C3
TA49123
transistor bI 240
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Untitled
Abstract: No abstract text available
Text: a ICM7170 HARRIS S E M I C O N D U C T O R |iP-Compatible Real-Time Clock March 1996 Description Features • 8-Bit |iP Bus Compatible - Multiplexed or Direct Addressing • Regulated Oscillator Supply Ensures Stability and Low Power Frequency • Time From 1/100 Seconds to 99 Years
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ICM7170
300ns
ICM7170
00bfl41b
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Untitled
Abstract: No abstract text available
Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS H A R R IS semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features JEDEC TO-220AB • 6A, 600V at Tc = +25°c EMITTER . 600V Switching SOA Capability • Typical Fall Time - 130ns at T j = +150°C
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HGTP3N60C3D,
HGT1S3N60C3D,
HGT1S3N60C3DS
O-220AB
130ns
O-262AA
1-800-4-HARRIS
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