Y100NS20FD
Abstract: ISD100A STY100NS20FD mosfet 100A ST ISD 100a JESD97
Text: STY100NS20FD N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STY100NS20FD 200V <0.024Ω 100A • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ ± 20V gate to source voltage rating
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STY100NS20FD
Max247
Y100NS20FD
ISD100A
STY100NS20FD
mosfet 100A ST
ISD 100a
JESD97
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st 50a
Abstract: JESD97 STY100NS20FD uc-225
Text: STY100NS20FD N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STY100NS20FD 200V <0.024Ω 100A • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ ± 20V gate to source voltage rating
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STY100NS20FD
Max247
st 50a
JESD97
STY100NS20FD
uc-225
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ISD100A
Abstract: ISD100
Text: STY100NS20FD N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STY100NS20FD 200V <0.024Ω 100A ) s ( t c u d o ) r s ( P t c e t u e d l Description o schematicrodiagram s Internal P b e O t e l )
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STY100NS20FD
Max247
STY100NS20FD
Max247
ISD100A
ISD100
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IXTN110N20L2
Abstract: NC182
Text: Advance Technical Information Linear L2TM Power MOSFET w/Extended FBSOA IXTN110N20L2 VDSS ID25 = 200V = 100A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings
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IXTN110N20L2
OT-227
E153432
100ms
110N20L2
IXTN110N20L2
NC182
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information Linear L2TM Power MOSFET w/Extended FBSOA VDSS ID25 IXTN110N20L2 = 200V = 100A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings
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IXTN110N20L2
OT-227
E153432
100ms
110N20L2
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Untitled
Abstract: No abstract text available
Text: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET PRELIMINARY DATA TYPE STY100NS20FD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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Max247
STY100NS20FD
Max247
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Untitled
Abstract: No abstract text available
Text: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT20M20B2LL
APT20M20LLL
O-264
O-264
O-247
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218F
Abstract: APT20M20B2LL APT20M20LLL
Text: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT20M20B2LL
APT20M20LLL
O-264
O-264
O-247
218F
APT20M20B2LL
APT20M20LLL
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Untitled
Abstract: No abstract text available
Text: APT20M18B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M18B2VR
A20M18LVR
O-264
O-264
APT20M18B2VR
O-247
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Untitled
Abstract: No abstract text available
Text: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT20M20B2LL
APT20M20LLL
O-264
O-247
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A20M18LVR
Abstract: APT20M18B2VR
Text: APT20M18B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M18B2VR
A20M18LVR
O-264
O-264
APT20M18B2VR
O-247
A20M18LVR
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Untitled
Abstract: No abstract text available
Text: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT20M20B2LL
APT20M20LLL
O-264
O-264
O-247
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APT20M20B2LL
Abstract: APT20M20LLL 218F
Text: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT20M20B2LL
APT20M20LLL
O-264
O-264
O-247
APT20M20B2LL
APT20M20LLL
218F
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APT20M16B2LL
Abstract: APT20M16LLL 050701
Text: APT20M16B2LL APT20M16LLL 200V 100A 0.016Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT20M16B2LL
APT20M16LLL
O-264
O-264
O-247
APT20M16B2LL
APT20M16LLL
050701
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Untitled
Abstract: No abstract text available
Text: APT20M16B2LL APT20M16LLL 200V 100A 0.016Ω POWER MOS 7 R B2LL MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT20M16B2LL
APT20M16LLL
O-264
O-247
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STY100NS20FD
Abstract: No abstract text available
Text: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET TYPE STY100NS20FD n n n n n n n VDSS RDS on ID 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING
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STY100NS20FD
Max247
STY100NS20FD
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STY100NS20FD
Abstract: No abstract text available
Text: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET n n n n n n n TYPE VDSS RDS on ID STY100NS20FD 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING
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STY100NS20FD
Max247
STY100NS20FD
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CAS100H12
Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
Text: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode
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CAS100H12AM1
VDS1200
CAS100H12AM1,
CAS100H12
CREE 1200V Z-Rec
CAS100H12AM1
Cree SiC MOSFET
silicon carbide
MOSFET "CURRENT source"
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APT30M30B2LL
Abstract: APT30M30LLL
Text: APT30M30B2LL APT30M30LLL 300V 100A 0.030Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT30M30B2LL
APT30M30LLL
O-264
O-264
O-247
APT30M30B2LL
APT30M30LLL
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer
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UF640-P
18OHM,
UF640-P
O-220
QW-R502-A17
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640V Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in
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UF640V
18OHM,
UF640V
QW-R502-916,
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PA30U
Abstract: SCHEMATIC 8000w Power Amplifier PA30 S1000 VB-12 1000W mosfet 2000w power amplifier e180 cc APEX A75
Text: FEATURES • OUTPUT POWER 2000W CONT, 8000W PULSE • NO SECOND BREAKDOWN, MOSFET OUTPUT • l0 = 50A CONTINUOUS, 100A PULSE • WIDE SUPPLY RANGE, 30V to 200V • 45 V/ns TYPICAL SLEW RATE • VERSATILE PROGRAMMABLE CURRENT LIMIT • THERMAL PROTECTION, OVERTEMP OUTPUT
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546-APEX
PA30U
SCHEMATIC 8000w Power Amplifier
PA30
S1000
VB-12
1000W mosfet
2000w power amplifier
e180 cc
APEX A75
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Untitled
Abstract: No abstract text available
Text: DEC 8 '992j FEATURES • • • • • • • OUTPUT POWER 2000W CONT, 8000W PULSE NO SECOND BREAKDOWN, MOSFET OUTPUT l0 = 50A CONTINUOUS, 100A PULSE WIDE SUPPLY RANGE, 30V to 200V 45 V/ns TYPICAL SLEW RATE VERSATILE PROGRAMMABLE CURRENT LIMIT THERMAL PROTECTION, OVERTEMP OUTPUT
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AZ5059013
PA30U
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sml20m22lvr
Abstract: No abstract text available
Text: mi SML20M22LVR SEME LAB 5TH GENERATION MOSFET T O -2 6 4 A A P ackage O utline Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Pin 1 - Gate Pin 2 - Drain Pin 3 - Source • • • • VDSS 200V ^D(cont) 100A ^DS(on) 0.022Q
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SML20M22LVR
O-264
sml20m22lvr
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