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    MOSFET 25A Search Results

    MOSFET 25A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H5N3004P-E Renesas Electronics Corporation Nch Single Power Mosfet 300V 25A 93Mohm To-3P Visit Renesas Electronics Corporation
    2SJ603(0)-Z-E1-AZ Renesas Electronics Corporation Pch Single Power Mosfet -60V -25A 48Mohm Mp-25Z/To-220Smd Visit Renesas Electronics Corporation
    H5N2301PF-E Renesas Electronics Corporation Nch Single Power Mosfet 230V 25A 85Mohm To-3Pfm Visit Renesas Electronics Corporation
    RJJ0621DPP-E0#T2 Renesas Electronics Corporation Pch Single Power Mosfet -60V -25A 56Mohm To-220Fp Visit Renesas Electronics Corporation
    HAT2140H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 25A 16Mohm Lfpak Visit Renesas Electronics Corporation

    MOSFET 25A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998


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    RFF70N06 RFF70N06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    Untitled

    Abstract: No abstract text available
    Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998


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    RFF60P06 RFF60P06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25N08 Power MOSFET 25A, 80V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT25N08 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and superior


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    UTT25N08 UTT25N08 QW-R502-749 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 25N20 Power MOSFET 25A, 200V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 25N20 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and


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    25N20 25N20 25N20L-TF3-T 25N20G-TF3-T 25N20L-TF1-T 25N20G-TF1-T QW-R502-A84 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3535-01 500 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E AV =f(starting Tch):Vcc=48V,I(AV)<=25A Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 2SK3535-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET


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    2SK3535-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand


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    UTT25P10 UTT25P10 UTT25P10L-TA3-T UTT25P10G-TA3-T UTT25P10L-TN3-T UTT25P10G-TN3-T UTT25P10L-TN3-R UTT25P10G-TN3-R QW-R502-597 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand


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    UTT25P10 UTT25P10 UTT25P10L-TA3-T UTT25P10G-TA3-T UTT25P10L-TN3-T UTT25P10G-TN3-T UTT25P10L-Tat QW-R502-597 PDF

    25N06

    Abstract: 25N06 MOSFET utc25n06 25N06L 25N06L-TA3-T power mosfet switching 12v switching relay 25n06g d 25n06
    Text: UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET 25A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC


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    25N06 25N06 QW-R502-450 25N06 MOSFET utc25n06 25N06L 25N06L-TA3-T power mosfet switching 12v switching relay 25n06g d 25n06 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET -25A, -100V, 0.150 Ω, P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand


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    UTT25P10 -100V, UTT25P10 -100V UTT25P10L-TA3-T UTT25P10G-TA3-T QW-502-597 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) 0.04 Ω IRFN044 ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    1545A IRFN044 PDF

    IRFN044

    Abstract: smd diode 44a
    Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN044 R DS(on) 0.04 Ω ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    1545A IRFN044 IRFN044 smd diode 44a PDF

    1E14

    Abstract: 2E12 FRF150R4 JANSR2N7292 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 92 /Subject (25A, 100V, 0.070 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 25A, 100V,


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    JANSR2N7292 FRF150R4 R2N72 1000K 1E14 2E12 FRF150R4 JANSR2N7292 Rad Hard in Fairchild for MOSFET PDF

    mdd1655

    Abstract: MDD165 MDD1655T 0342F
    Text: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.


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    MDD1655 MDD1655 MDD165 MDD1655T 0342F PDF

    G60N

    Abstract: SS31 DIODE DS22062 pspice model TC4423A Tc4421 spice model TC1412 Latch-Up Protection for MOSFET Drivers 439M AN1327 TC1411
    Text: AN1327 Avoiding MOSFET Driver Overstress Author: Ray DiSilvestro Microchip Technology Inc. INTRODUCTION This application note describes how to avoid MOSFET driver overstress. MOSFET drivers are used in many applications to drive the high input capacitance of a


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    AN1327 dri18 DS01327A-page G60N SS31 DIODE DS22062 pspice model TC4423A Tc4421 spice model TC1412 Latch-Up Protection for MOSFET Drivers 439M AN1327 TC1411 PDF

    FCH25N60

    Abstract: FCH25N60N mosfet 600V 25A TO247s
    Text: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


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    FCH25N60N FCH25N60N FCH25N60 mosfet 600V 25A TO247s PDF

    Untitled

    Abstract: No abstract text available
    Text: AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is for PWM applications. VDS (V) = 30V ID = 25A (VGS = 10V)


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    AON6408 AON6408 PDF

    FCH25N60N

    Abstract: No abstract text available
    Text: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


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    FCH25N60N FCH25N60N PDF

    FCP25N60N

    Abstract: F102 DIODE 83A mosfet 600V 25A
    Text: SupreMOS FCP25N60N_F102 TM tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


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    FCP25N60N F102 DIODE 83A mosfet 600V 25A PDF

    Untitled

    Abstract: No abstract text available
    Text: AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is for PWM applications. VDS (V) = 30V ID = 25A (VGS = 10V)


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    AON6408 AON6408 PDF

    transistor RFP25N05

    Abstract: AN7254 AN7260 AN9321 AN9322 RFP25N05 TB334
    Text: RFP25N05 Data Sheet January 2002 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features • 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits,


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    RFP25N05 RFP25N05 TA09771. O-220AB transistor RFP25N05 AN7254 AN7260 AN9321 AN9322 TB334 PDF

    FCI25N60N

    Abstract: mosfet 600V 25A
    Text: SupreMOSTM FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


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    FCI25N60N mosfet 600V 25A PDF

    ISL6364A

    Abstract: No abstract text available
    Text: Synchronous Rectified Buck MOSFET Drivers ISL6625A Features The ISL6625A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. • Dual MOSFET drives for synchronous rectified bridge


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    ISL6625A ISL6625A ISL6625A, 5m-1994. FN7978 ISL6364A PDF

    SW50N06

    Abstract: Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent
    Text: SAMWIN SW50N06 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better


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    SW50N06 023ohm SW50N06 Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent PDF

    mdd1655

    Abstract: No abstract text available
    Text: Single N-channel Trench MOSFET 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1655 is suitable device for PWM, Load


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    MDD1655 100oC MDD1655 PDF