Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 300V 10A DATASHEET Search Results

    MOSFET 300V 10A DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 300V 10A DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SCT2120AF Datasheet N-channel SiC power MOSFET Outline VDSS 650V RDS on (Typ.) 120m ID 29A PD 165W TO220AB Inner circuit Features (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel


    Original     		PDF SCT2120AF O220AB R1102A

    Untitled

    Abstract: No abstract text available
    Text: Datasheet MICROOPTO OPTO Modules NEW The MICROOPTO line of solid-state relays provides several options for switching and protecting signals. The line features pluggable cross connections and industrial standard marking options, all in a standard terminal block footprint of 6.1mm.


    Original     		PDF GOSTME25; 2003-Vl-Abs. UL508 12-28VDC/5VTTL 4/10-LIT1006

    R6020FNJ

    Abstract: No abstract text available
    Text: R6020FNJ Nch 600V 20A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.28Ω ID ±20A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).


    Original     		PDF R6020FNJ R6020FNJ

    CHT-PLA8543C

    Abstract: No abstract text available
    Text: The Leader in High Temperature Semiconductor Solutions Version: 3.1 CHT-NEPTUNE PRELIMINARY DATASHEET High-Temperature High Voltage, Silicon Carbide MOSFET General description Features high-temperature, • Specified from -55 to +225°C Tj high-voltage, Silicon Carbide MOSFET


    Original     		PDF O-257 150make PDS-111102 20-Sep-13 CHT-PLA8543C

    IXTM20N60

    Abstract: SHD239607 mosfet 300V 10A type
    Text: SHD239607 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXTM20N60 MAXIMUM RATINGS


    Original     		PDF SHD239607 IXTM20N60 IXTM20N60 SHD239607 mosfet 300V 10A type

    Amp. mosfet 1000 watt

    Abstract: SHD225608
    Text: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT


    Original     		PDF SHD225608 250mA Amp. mosfet 1000 watt SHD225608

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS


    Original     		PDF SHD239607 IXTM20N60

    IXFM20N60

    Abstract: SHD239608
    Text: SHD239608 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 703, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXFM20N60 MAXIMUM RATINGS


    Original     		PDF SHD239608 IXFM20N60 IXFM20N60 SHD239608

    Untitled

    Abstract: No abstract text available
    Text: R6020ANX Nch 600V 20A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6020ANX O-220FM R1120A

    R6020-ANX

    Abstract: No abstract text available
    Text: R6020ANX Datasheet Nch 600V 20A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6020ANX O-220FM R1120A R6020-ANX

    Untitled

    Abstract: No abstract text available
    Text: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.


    Original     		PDF R6020FNX O-220FM R1102A

    FDPF*10N60NZ

    Abstract: FDPF10N60NZ FDP10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power
    Text: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP10N60NZ FDPF10N60NZ FDPF*10N60NZ FDPF10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power

    Untitled

    Abstract: No abstract text available
    Text: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A • Low Gate Charge ( Typ. 23nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP10N60NZ FDPF10N60NZ

    Untitled

    Abstract: No abstract text available
    Text: R SuperFET II FCP190N60 / FCPF190N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETII is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower


    Original     		PDF FCP190N60 FCPF190N60 FCPF190N60 160pF)

    FDPF10N60NZ

    Abstract: FDPF*10N60NZ FDP10N60NZ FDPF10N60 600v 10A ultra fast recovery diode
    Text: FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m Features Description • RDS on = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDP10N60NZ FDPF10N60NZ FDPF10N60NZ FDPF*10N60NZ FDPF10N60 600v 10A ultra fast recovery diode

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original     		PDF RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652

    F10N60

    Abstract: No abstract text available
    Text: SDP/F10N60 Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS ID Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 600V 10A G D S 0.75 @ VGS=10V,ID=5A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )


    Original     		PDF SDP/F10N60 O-220 O-220F SDP10N60 SDF10N60 O-220/220F F10N60

    TRANSISTORS 132 GD

    Abstract: IRF1010 IRF737LC
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω


    Original     		PDF IRF737LC IRF1010 TRANSISTORS 132 GD IRF1010 IRF737LC

    IRFDC20

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD -9.1228 IRFDC20 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 600V RDS on = 4.4Ω


    Original     		PDF IRFDC20 IRFDC20

    Untitled

    Abstract: No abstract text available
    Text: FCPF190N60_F152 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCPF190N60

    TRIACS EQUIVALENT LIST

    Abstract: 440v to 12v smps power supply REG IC 48V IN 12V 10A OUT 440v ac voltage regulator 440v to 12v smps power supply 50A dimmer diagrams IGBT FKPF12N60 24v 12v 20A regulator 600V igbt dc to dc buck converter 24V 10A SMPS
    Text: FS8S0765RC The FS8S0765RC is a highly integrated off-line power switch FPS for CRT monitor fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (650V minimum breakdown rating) with a


    Original     		PDF FS8S0765RC new/fs8s0765rc FS8S0765RC ACE1502 FAN1655 FAN2534 FAN5098 Power247TM, TRIACS EQUIVALENT LIST 440v to 12v smps power supply REG IC 48V IN 12V 10A OUT 440v ac voltage regulator 440v to 12v smps power supply 50A dimmer diagrams IGBT FKPF12N60 24v 12v 20A regulator 600V igbt dc to dc buck converter 24V 10A SMPS

    Untitled

    Abstract: No abstract text available
    Text: FCPF190N60E_F152 N-Channel SuperFET II MOSFET 600 V, 20.6 A, 190 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCPF190N60E

    SSH10N60A

    Abstract: No abstract text available
    Text: SSH10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


    Original     		PDF SSH10N60A SSH10N60A

    IRFPC60LC

    Abstract: IRFPE30
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated


    Original     		PDF IRFPC60LC stanFPE30 IRFPC60LC IRFPE30