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    MOSFET 4800 SWITCHING VOLT Search Results

    MOSFET 4800 SWITCHING VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4800 SWITCHING VOLT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT DRIVER SCHEMATIC chip

    Abstract: IGBT/MOSFET Gate Drive OMD100F60HL OMD120L60HL OMD240N10HL OMD300N06HL
    Text: OMD120L60HL Preliminary Data Sheet OMD300N06HL OMD240N10HL OMD100F60HL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules With Internal Gate Drive, Half-Bridge Configuration FEATURES • • • • •


    Original     		PDF OMD300N06HL OMD120L60HL OMD240N10HL OMD100F60HL IGBT DRIVER SCHEMATIC chip IGBT/MOSFET Gate Drive OMD100F60HL OMD120L60HL

    Untitled

    Abstract: No abstract text available
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX40N30A Features • • • • • • • 300 Volts 40 Amps 85 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


    Original     		PDF MSAFX40N30A

    ID100

    Abstract: MSAFX40N30A
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX40N30A Features • • • • • • • 300 Volts 40 Amps 85 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


    Original     		PDF MSAFX40N30A ID100 MSAFX40N30A

    S 566 b

    Abstract: 7095 7085 VOLTAGE REGULATOR
    Text: FEATURES Power input voltage range: 2.95 V to 20 V On-board bias regulator Minimum output voltage: 0.6 V 0.6 V reference voltage with ±1.0% accuracy Supports all N-channel MOSFET power stages Available in 300 kHz, 600 kHz, and 1.0 MHz options No current sense resistor required


    Original     		PDF ADP1878/ADP1879 ADP1879 14-Lead CP-14-2 CP-14-2 S 566 b 7095 7085 VOLTAGE REGULATOR

    mosfet 4800 circuit

    Abstract: No abstract text available
    Text: PD - 94364F IRF6603 HEXFET Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Power MOSFET


    Original     		PDF IRF6603 94364F IRF6603 20-Jun-2012 mosfet 4800 circuit

    V5500

    Abstract: BSC042N03MS 220V 5A Automatic Voltage Regulator 555 timer hiccup mode MARKING 5A regulator 5V
    Text: FEATURES Power input voltage range: 2.95 V to 20 V On-board bias regulator Minimum output voltage: 0.6 V 0.6 V reference voltage with ±1.0% accuracy Supports all N-channel MOSFET power stages Available in 300 kHz, 600 kHz, and 1.0 MHz options No current sense resistor required


    Original     		PDF ADP1879 14-lead ADP1878/ CP-14-2 V5500 BSC042N03MS 220V 5A Automatic Voltage Regulator 555 timer hiccup mode MARKING 5A regulator 5V

    OMS100F60HL

    Abstract: OMS120L60HL OMS240N10HL OMS300N06HL
    Text: OMS120L60HL Preliminary Data Sheet OMS300N06HL OMS240N10HL OMS100F60HL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules, Half-Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design


    Original     		PDF OMS300N06HL OMS120L60HL OMS240N10HL OMS100F60HL OMS100F60HL OMS120L60HL

    DirectFET

    Abstract: marking code V6 73 DIODE
    Text: PD - 94365E IRF6604 Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l HEXFET Power MOSFET


    Original     		PDF IRF6604 94365E IRF6604 20-Jun-2012 DirectFET marking code V6 73 DIODE

    step down high current

    Abstract: No abstract text available
    Text: FEATURES TYPICAL APPLICATIONS CIRCUIT Power input voltage range: 2.95 V to 20 V On-board bias regulator Minimum output voltage: 0.6 V 0.6 V reference voltage with ±1.0% accuracy Supports all N-channel MOSFET power stages Available in 300 kHz, 600 kHz, and 1.0 MHz options


    Original     		PDF ADP1878/ADP1879 ADP1879 14-Lead CP-14-2 CP-14-2 step down high current

    Untitled

    Abstract: No abstract text available
    Text: Dual P-channel MOSFET ELM14821AA-N •General description ■Features ELM14821AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and operation with gate voltages as low as 1.8V and internal ESD protection. • • • • •


    Original     		PDF ELM14821AA-N ELM14821AA-N

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T

    Untitled

    Abstract: No abstract text available
    Text: NTP60N06, NTB60N06 Power MOSFET 60 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 60 AMPERES, 60 VOLTS


    Original     		PDF NTP60N06, NTB60N06 O-220 NTB60N06 NTP60N06 NTP60N06G NTB60N06G

    n02 mosfet

    Abstract: 80 n02 fet 85N02R NTD85N02R
    Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Pb−Free Packages are Available Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss


    Original     		PDF NTD85N02R NTD85N02RG NTD85N02R-001 NTD85N02R-1G NTD85N02RT4 NTD85N02RT4G BRD8011/D. n02 mosfet 80 n02 fet 85N02R

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    2sj403

    Abstract: 2sk2532 2SJ406 2SJ28 mosfet 4800 2sk2680 2SK2161 2SK1427 2SK1428 2SK1430
    Text: Large-signal Power M0SFETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		PDF chan12/0 2SK2010 2SK2011 2SK2012 2SK2108 2SK2058 2SK2058 O-220 T0-220ML H707b 2sj403 2sk2532 2SJ406 2SJ28 mosfet 4800 2sk2680 2SK2161 2SK1427 2SK1428 2SK1430

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE SF150AA50 UL;E76102 M SF1 5 0 A A 5 0 is an isolated MOSFET module designed for fast switching applications of low voltage/high current. S F 1 5 0 A A 5 0 enable you to control high power with compact p a c k a g e .^ ^ 150A, VDSS= 500V Compact Package


    OCR Scan     		PDF SF150AA50 E76102 112M3 Q00B24B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet OMD300N06HL OMD120L60HL OMD240N10HL OMDIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules With Internal Gate Drive, Half-Bridge Configuration FEATURES • • • • •


    OCR Scan     		PDF OMD300N06HL OMD120L60HL OMD240N10HL b76TD73 534-5776F

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet OMD300N06HL OMD120L60HL OMD240N10HL OMD100F60HL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 6 0 0 Volt, 100 To 3 0 0 A m p M o d u l e s Wi th In ter nal G a t e Drive. H a l f - B r i d g e C o n f i g u r a t i o n


    OCR Scan     		PDF OMD300N06HL OMD120L60HL OMD240N10HL OMD100F60HL 300N06HL 240N10HL 120L60HL 100F60HL

    100F60

    Abstract: FTC 960 OMS100F60HL OMS120L60HL OMS240N10HL OMS300N06HL 12,000 volt 50 amp diode
    Text: OMS120L60HL Preliminary Data Sheet OMS300N06HL OMS24QN1OHL OMSIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules, Half-Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design


    OCR Scan     		PDF OMS300N06HL OMS120L60HL OMS240N10HL 100F60 FTC 960 OMS100F60HL 12,000 volt 50 amp diode

    ld1000

    Abstract: No abstract text available
    Text: Preliminary Data Sheet OMS300N06HL OMS120L60HL OMS240N10HL OMSIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules, Half-Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design


    OCR Scan     		PDF OMS300N06HL OMS120L60HL OMS240N10HL OMS100F60HL 300N06HL 240N10HL 120L60HL ld1000

    chn 714

    Abstract: No abstract text available
    Text: Microsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX40N30A Features 300 Volts 40 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


    OCR Scan     		PDF MSAFX40N30A chn 714

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    Untitled

    Abstract: No abstract text available
    Text: Prelim inary Data Sheet OMS300N06HL OMS120L60HL OMS240N10HL OMSIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules. Half-Bridge Configuratio n FEATURES • • • • • Isolated Heat Sink Low Inductance Design


    OCR Scan     		PDF OMS300N06HL OMS120L60HL OMS240N10HL OMS100F60HL 300N06HL 240N10HL 120L60HL

    high voltage diode T35

    Abstract: T35 diode diode T35 DDD1013 OMD100F60HL OMD120L60HL OMD240N10HL OMD300N06HL TG73
    Text: OMD120L60HL Preliminary Data Sheet OMD300N06HL OMD240N10HL OMDIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules With Internal Gate Drive, Half-Bridge Configuration FEATURES • • • • •


    OCR Scan     		PDF OMD300N06HL OMD120L60HL OMD240N10HL 534-5776FAX 537-424S high voltage diode T35 T35 diode diode T35 DDD1013 OMD100F60HL TG73