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    MOSFET 800V 17A Search Results

    MOSFET 800V 17A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 800V 17A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT17N80BC3 APT17N80SC3 0.290Ω 800V 17A Super Junction MOSFET COOLMOS D3PAK TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package D


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    APT17N80BC3 APT17N80SC3 O-247 O-247 PDF

    3N80C

    Abstract: FQPF*3N80C DATE CODE FAIRCHILD
    Text: TM FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP3N80C/FQPF3N80C O-220 FQPF3N80C O-220F-3 FQPF3N80CYDTU 3N80C FQPF*3N80C DATE CODE FAIRCHILD PDF

    8n80c

    Abstract: 8n80 FQP8N80C FQPF
    Text: TM FQP8N80C/FQPF8N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP8N80C/FQPF8N80C O-220 FQPF8N80C FQPF8N80CXDTU FQPF8N80CYDTU 8n80c 8n80 FQP8N80C FQPF PDF

    APT17N80BC3

    Abstract: APT17N80SC3
    Text: APT17N80BC3 APT17N80SC3 800V 17A 0.290Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS


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    APT17N80BC3 APT17N80SC3 O-247 O-247 APT17N80BC3 APT17N80SC3 PDF

    10V11A

    Abstract: No abstract text available
    Text: APT17N80BC3 APT17N80SC3 0.290Ω 800V 17A Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS


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    APT17N80BC3 APT17N80SC3 O-247 O-247 10V11A PDF

    APT17N80CC3

    Abstract: No abstract text available
    Text: APT17N80CC3 800V 11.5A 0.320Ω Super Junction MOSFET TO-254 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-254 Package D G S MAXIMUM RATINGS Symbol VDSS


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    APT17N80CC3 O-254 O-254 APT17N80CC3 PDF

    P8NK80ZFP

    Abstract: w8nk80z zener diode 3.0 b2 P8NK80 4.7 B2 zener B2 marking code Zener ZENER DIODE zener diode 15v STP7NK80ZFP stp8nk
    Text: STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP8NK80Z 800 V < 1.5 Ω 6.2 A STP8NK80ZFP 800 V < 1.5 Ω 6.2 A STW8NK80Z


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    STP8NK80Z STP8NK80ZFP STW8NK80Z O-220 /TO-220FP/TO-247 STP8NK80Z O-220FP O-220 P8NK80ZFP w8nk80z zener diode 3.0 b2 P8NK80 4.7 B2 zener B2 marking code Zener ZENER DIODE zener diode 15v STP7NK80ZFP stp8nk PDF

    Untitled

    Abstract: No abstract text available
    Text: APT31N80JC3 800V 31A 0.145Ω Super Junction MOSFET S S D G COOLMOS SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular SOT-227 Package • N-Channel Enhancement Mode


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    APT31N80JC3 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT17N80BC3 800V 17A 0.290Ω Super Junction MOSFET COOLMOS TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.


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    APT17N80BC3 O-247 O-247 APT17N80BC3 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D


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    APT34N80B2C3 APT34N80LC3 O-264 O-264 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D


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    APT34N80B2C3 APT34N80LC3 O-264 O-264 APT34N80B2C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT34N80B2C3 G APT34N80LC3(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated


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    APT34N80B2C3 APT34N80LC3 O-264 O-264 O-247 PDF

    diode IN 34A

    Abstract: APT34N80B2C3 APT34N80LC3
    Text: APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package D


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    APT34N80B2C3 APT34N80LC3 O-264 O-264 APT34N80B2C3 O-247 diode IN 34A APT34N80LC3 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT17F80B APT17F80S 800V, 17A, 0.65Ω Max, trr ≤250ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced


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    APT17F80B APT17F80S 250ns APT17F80B APT17F( PDF

    transistors mj 1504

    Abstract: 141F APT31N80JC3 APT15DF100
    Text: APT31N80JC3 800V 31A 0.145Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package


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    APT31N80JC3 OT-227 transistors mj 1504 141F APT31N80JC3 APT15DF100 PDF

    P8NK80ZFP

    Abstract: No abstract text available
    Text: STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID STP8NK80Z 800 V < 1.5 Ω 6.2 A STP8NK80ZFP 800 V < 1.5 Ω 6.2 A STW8NK80Z 800 V < 1.5 Ω 6.2 A


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    STP8NK80Z STP8NK80ZFP STW8NK80Z O-220 /TO-220FP/TO-247 STP8NK80Z O-220FP O-220 P8NK80ZFP PDF

    APT31N80JC3

    Abstract: No abstract text available
    Text: APT31N80JC3 800V 31A 0.145Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular SOT-227 Package • N-Channel Enhancement Mode


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    APT31N80JC3 OT-227 Cont193) APT31N80JC3 PDF

    PF355

    Abstract: APT31N80JC3 APT15DF100
    Text: APT31N80JC3 800V 31A 0.145Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package


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    APT31N80JC3 OT-227 APT31N80JC3 PF355 APT15DF100 PDF

    P8NK80ZFP

    Abstract: P8NK80 w8nk80z P8NK80Z STP8NK80ZFP STW8NK80Z JESD97 STP8NK80Z *p8nk80 w8nk80
    Text: STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID STP8NK80Z 800 V < 1.5 Ω 6.2 A STP8NK80ZFP 800 V < 1.5 Ω 6.2 A STW8NK80Z 800 V < 1.5 Ω 6.2 A


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    STP8NK80Z STP8NK80ZFP STW8NK80Z O-220 /TO-220FP/TO-247 STP8NK80Z O-220FP O-220 P8NK80ZFP P8NK80 w8nk80z P8NK80Z STP8NK80ZFP STW8NK80Z JESD97 *p8nk80 w8nk80 PDF

    Untitled

    Abstract: No abstract text available
    Text: STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID STP8NK80Z 800 V < 1.5 Ω 6.2 A STP8NK80ZFP 800 V < 1.5 Ω 6.2 A STW8NK80Z 800 V < 1.5 Ω 6.2 A


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    STP8NK80Z STP8NK80ZFP STW8NK80Z O-220 /TO-220FP/TO-247 STP8NK80Z O-220FP O-220 PDF

    W18NK80Z

    Abstract: STW18NK80Z
    Text: STW18NK80Z N-CHANNEL 800V - 0.34Ω - 18A TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STW18NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.38 Ω 18 A 300 W TYPICAL RDS(on) = 0.34 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


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    STW18NK80Z O-247 W18NK80Z STW18NK80Z PDF

    APT0406

    Abstract: APT0502 APTM120VDA57T3G "VDSS 800V" mosfet
    Text: APTM120VDA57T3G Dual Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 570mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction PFC • Interleaved PFC Features


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    APTM120VDA57T3G APTM120VDA57T3G­ APT0406 APT0502 APTM120VDA57T3G "VDSS 800V" mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM120VDA57T3G Dual Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 570mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction PFC • Interleaved PFC Features


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    APTM120VDA57T3G APTM120VDA57T3Gâ PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM120VDA57T3G Dual Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 570m typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction PFC  Interleaved PFC Features


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    APTM120VDA57T3G APTM120VDA57T3Gâ PDF