Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 8N80 Search Results

    MOSFET 8N80 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 8N80 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8N80

    Abstract: ua 471 8N80l 8N80L-TF3-T 8N80L-TF2-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    O-220 O-220F O-220F1 QW-R502-471 8N80 ua 471 8N80l 8N80L-TF3-T 8N80L-TF2-T PDF

    8n80

    Abstract: MOSFET 8N80 ua 471 TO-220-F1 8N80L-TA3-T 8N80G-TA3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    O-220 O-220F1 QW-R502-471 8n80 MOSFET 8N80 ua 471 TO-220-F1 8N80L-TA3-T 8N80G-TA3-T PDF

    8n80l

    Abstract: ua 471 8n80
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    QW-R502-471 8n80l ua 471 8n80 PDF

    8n80

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    QW-R502-471 8n80 PDF

    8N80

    Abstract: ua 471
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    O-220 O-220F O-220F1 QW-R502-471 8N80 ua 471 PDF

    8n80

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N80 Preliminary Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    O-220 O-220F1 QW-R502-471 8n80 PDF

    8n80c

    Abstract: 8n80 FQP8N80C FQPF
    Text: TM FQP8N80C/FQPF8N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQP8N80C/FQPF8N80C O-220 FQPF8N80C FQPF8N80CXDTU FQPF8N80CYDTU 8n80c 8n80 FQP8N80C FQPF PDF

    STD8N80K5

    Abstract: STU8N80K5 STFI8N80K5 STP8N80K5 STF8N80K5 8N80K5
    Text: STD8N80K5, STF8N80K5, STFI8N80K5, STP8N80K5, STU8N80K5 N-channel 800 V, 0.76 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK, TO-220FP, I2PAKFP, TO-220 and IPAK Datasheet — preliminary data Features Order codes TAB VDSS RDS on max. ID


    Original
    STD8N80K5, STF8N80K5, STFI8N80K5, STP8N80K5, STU8N80K5 O-220FP, O-220 STD8N80K5 STF8N80K5 STFI8N80K5 STU8N80K5 STP8N80K5 8N80K5 PDF

    STU8N80K5

    Abstract: 8N80K5 TL 139 std8n80k5 stf8n80
    Text: STD8N80K5, STF8N80K5, STFI8N80K5, STP8N80K5, STU8N80K5 N-channel 800 V, 0.76 Ω, 6 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, I2PAKFP, TO-220 and IPAK Datasheet — preliminary data Features Order codes TAB VDSS RDS on max. ID PW 3 1


    Original
    STD8N80K5, STF8N80K5, STFI8N80K5, STP8N80K5, STU8N80K5 O-220FP, O-220 STD8N80K5 STF8N80K5 STFI8N80K5 STU8N80K5 8N80K5 TL 139 stf8n80 PDF

    8N80K5

    Abstract: No abstract text available
    Text: STL8N80K5 N-channel 800 V, 0.76 Ω typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − preliminary data Features Order code VDS RDS on max. ID STL8N80K5 800 V 0.95 Ω 4.5 A • Outstanding RDS(on)*area ■


    Original
    STL8N80K5 8N80K5 PDF

    Untitled

    Abstract: No abstract text available
    Text: STD8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK package Datasheet − production data Features TAB Order code VDS RDS on max. ID PTOT STD8N80K5 800 V 0.95 Ω 6A 110 W • Worldwide best FOM (figure of merit)


    Original
    STD8N80K5 DocID024412 PDF

    STP8N80

    Abstract: STP8N80K5 STP8N8
    Text: STP8N80K5, STU8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packages Datasheet − production data Features Order codes VDS RDS on max. ID PTOT 800 V 0.95 Ω 6A 110 W STP8N80K5 TAB TAB STU8N80K5 3 2


    Original
    STP8N80K5, STU8N80K5 O-220 STP8N80K5 O-220 DocID023544 STP8N80 STP8N80K5 STP8N8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Power MOSFET IXTH 8 N80 VDSS ID cont RDS(on) N-Channel Enhancement Mode = 800 V =8A = 1.4 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous


    Original
    O-247 728B1 123B1 065B1 PDF

    8n80

    Abstract: 8n80k5 stf8n80
    Text: STF8N80K5, STFI8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − preliminary data Features Order codes VDS RDS on max. ID PTOT 800 V 0.95 Ω 6A 25 W STF8N80K5 STFI8N80K5 • Worldwide best FOM (figure of merit)


    Original
    STF8N80K5, STFI8N80K5 O-220FP STF8N80K5 STFI8N80K5 O-220FP O-281) DocID024419 8n80 8n80k5 stf8n80 PDF

    Untitled

    Abstract: No abstract text available
    Text: STL8N80K5 N-channel 800 V, 0.80 Ω typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID STL8N80K5 800 V 0.95 Ω 4.5 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)


    Original
    STL8N80K5 DocID024079 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original
    O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF