equivalent 2sk2837 mosfet
Abstract: No abstract text available
Text: Power MOSFET Heat Sink Design Power MOSFET in Detail 6. Heat Sink Design 6.1 Maximum Allowable Power Dissipation and Radiation Equivalent Circuits When the circuit has been designed for fully adequate thermal stability, the maximum allowable power dissipation PDmax for power MOSFETs can be determined based on the power MOSFET’s
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards.
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UT6302
UT6302
UT6302L-AE3-R
UT6302G-AE3-R
OT-23
QW-R502-363
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments, such as portable electronics and PCMCIA cards.
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UT6302
UT6302
UT6302L-AE2-R
UT6302G-AE2-R
UT6302L-AE3-R
UT6302G-AE3-R
OT-23-3
OT-23
QW-R502-363
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Untitled
Abstract: No abstract text available
Text: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z
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TPD7211F
TPD7211F
SON8-P-0303-0
7211F
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2x2-6L-U Power Management Transistors- MOSFET CJMNT32 PNP Power Transistor with N-MOSFET DESCRIPTIONS The CJMNT32 is PNP bipolar power transistor with 20V N-MOSFET.This device is suitable for use in charging
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CJMNT32
CJMNT32
100KHz
500mA
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AN10273
Abstract: philips 170c avalanche inductor 2mH mosfet pp BUK764R0-55B
Text: H Philips Semiconductor Applications AN10273_1 Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating Introduction Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET.
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AN10273
philips 170c
avalanche
inductor 2mH
mosfet pp
BUK764R0-55B
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT6302 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MOSFET DESCRIPTION The UTC UT6302 is a Power MOSFET offering the customers efficient and reliable performance. The UTC UT6302 is ideal for thin application environments,
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UT6302
UT6302
UT6302G-AE3-R
OT-23
6302G
QW-R502-363
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Untitled
Abstract: No abstract text available
Text: Power MOSFET Application Precautions Power MOSFET in Detail 5. Application Precautions 5.1 Precautions Concerning Drive Conditions for Shortening Switching Time Bipolar transistors require a large base current to maintain the saturation area; however, power
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T2955V
Abstract: T2-955V MTD2955VT4 MTD2955V AN569 MTD2955V1 2955v Power MOSFET 12 Amps, 60 Volts p-Channel
Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge
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MTD2955V
r14525
MTD2955V/D
T2955V
T2-955V
MTD2955VT4
MTD2955V
AN569
MTD2955V1
2955v
Power MOSFET 12 Amps, 60 Volts p-Channel
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15N06VL
Abstract: 15n06v 06vl diode sod-123 marking code 12
Text: MTD15N06VL Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge
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MTD15N06VL
MTD15N06VL/D
15N06VL
15n06v
06vl
diode sod-123 marking code 12
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T2-955V
Abstract: 2955v T2955V MTD2955VT4 369D AN569 MTD2955V SMD310 369C
Text: MTD2955V Power MOSFET 12 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge
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MTD2955V
MTD2955V/D
T2-955V
2955v
T2955V
MTD2955VT4
369D
AN569
MTD2955V
SMD310
369C
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15N06VL
Abstract: 15n06v 15N06 MTD15N06VL MTD15N06VL1 MTD15N06VLT4 AN569
Text: MTD15N06VL Power MOSFET 15 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge
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MTD15N06VL
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MTD15N06VL/D
15N06VL
15n06v
15N06
MTD15N06VL
MTD15N06VL1
MTD15N06VLT4
AN569
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15N06VL
Abstract: transistor mj 4035 369D AN569 MTD15N06VL MTD15N06VLT4 15n06v
Text: MTD15N06VL Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge
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MTD15N06VL
MTD15N06VL/D
15N06VL
transistor mj 4035
369D
AN569
MTD15N06VL
MTD15N06VLT4
15n06v
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P65 MOSFET
Abstract: IRF7353D2
Text: PD- 93809 IRF7353D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint
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7353d2
P65 MOSFET
IRF7353D2
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AN569
Abstract: MTB36N06V MTB36N06VT4
Text: MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTB36N06V
r14525
MTB36N06V/D
AN569
MTB36N06V
MTB36N06VT4
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3055V
Abstract: paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v
Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055V
r14525
MTD3055V/D
3055V
paste
AN569
MTD3055V
MTD3055V1
MTD3055VT4
t3055v
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str3a100
Abstract: thermistor type R53
Text: Off-Line PWM Controllers with Integrated Power MOSFET STR3A100 Series General Descriptions Package The STR3A100 series are power ICs for switching power supplies, incorporating a MOSFET and a current mode PWM controller IC. The low standby power is accomplished by the
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STR3A100
thermistor type R53
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15n06v
Abstract: N06V 369D AN569 MTD15N06V MTD15N06VT4 mosfet DPAK
Text: MTD15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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15n06v
N06V
369D
AN569
MTD15N06V
MTD15N06VT4
mosfet DPAK
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3055V
Abstract: MTD3055VT4 MTD3055V 369D AN569
Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055V
MTD3055V/D
3055V
MTD3055VT4
MTD3055V
369D
AN569
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AN569
Abstract: MTB30P06V MTB30P06VT4
Text: MTB30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTB30P06V
r14525
MTB30P06V/D
AN569
MTB30P06V
MTB30P06VT4
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t3055vl
Abstract: T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4
Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055VL
r14525
MTD3055VL/D
t3055vl
T30-55VL
3055vl
MTD3055VL1
3055V
AN569
MTD3055VL
MTD3055VLT4
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MTD3055V
Abstract: mosfet DPAK
Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055V
MTD3055V/D
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mosfet DPAK
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transistor npn high speed switching
Abstract: TRANSISTOR mosfet k2
Text: FA7622P M Bipolar 1C For Switching Power Supply Control • Description ■ Dimensions, mm The FA7622P(M) is a DC-DC converter 1C that can directly drive a power MOSFET. This 1C has all the necessary protection functions for a power MOSFET. It is optimum for
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FA7622P
OP-21)
600mA)
transistor npn high speed switching
TRANSISTOR mosfet k2
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FA7622P
Abstract: similar ic book 67CP R10D FA7622
Text: Bipolar 1C For Switching Power Supply Control FA7622P M • Description I Dimensions, mm The FA7622P<M) is a DC-DC converter 1C that can directly drive a power MOSFET. This !C has all the necessary protection functions for a power MOSFET. It is optimum for
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FA7622P
FA7622P
FA7622PM)
OP-20
similar ic book
67CP
R10D
FA7622
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