Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
|
Original
|
O-220
QW-R502-053
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
|
Original
|
2SJ687
2SJ687
2SJ687-ZK-E1-AY
2SJ687-ZK-E2-AY
O-252
|
PDF
|
522BS
Abstract: BSP75GTA
Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over
|
Original
|
BSP75G
550mJ
OT223
522-BSP75GTA
BSP75GTA
522BS
BSP75GTA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested
|
Original
|
SUM65N20-30
O-263
SUM65N20-30-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4836DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 D TrenchFETr Power MOSFET D PWM Optimized rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 APPLICATIONS 0.004 @ VGS = 2.5 V 22 0.005 @ VGS = 1.8 V 19 D Low Voltage Synchronous Rectfication
|
Original
|
Si4836DY
S-04710â
01-Oct-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK3474-01 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E AV =f(starting Tch):Vcc=48V,I(AV)<=23A High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 20 IAV [A] EAV [mJ] Features 25 200 150 100 N-CHANNEL SILICON POWER MOSFET
|
Original
|
2SK3474-01
|
PDF
|
Marking D9N
Abstract: NID9N05ACL A 673 C2 transistor NID9N05ACLT4G 05AC NID9N05CLG
Text: NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP
|
Original
|
NID9N05CL,
NID9N05ACL
NID9N05CL/D
Marking D9N
A 673 C2 transistor
NID9N05ACLT4G
05AC
NID9N05CLG
|
PDF
|
UPS 380v
Abstract: 20n60c power switching
Text: CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , Superjunction MOSFET VDSS = 600 V ID25 = 14 A Ω RDS(on) = 190 mΩ Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220LVTM
|
Original
|
20N60C
ISOPLUS220TM
220LVTM
E153432
728B1
065B1
123B1
UPS 380v
20n60c
power switching
|
PDF
|
ENA1510A
Abstract: a15102 40v 7.5a P-Channel N-Channel
Text: ECH8668 Ordering number : ENA1510A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8668 General-Purpose Switching Device Applications Features • • • • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
|
Original
|
ENA1510A
ECH8668
ECH8668
PW10s,
A1510-8/8
ENA1510A
a15102
40v 7.5a P-Channel N-Channel
|
PDF
|
DMS3016SS
Abstract: DMS3016SSSA
Text: DMS3016SSSA N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS ON - minimizes conduction losses
|
Original
|
DMS3016SSSA
AEC-Q101
DS35073
621-MMBT3904LP-7B
MMBT3904LP-7B
DMS3016SS
DMS3016SSSA
|
PDF
|
019N03L
Abstract: BSZ019N03LS
Text: n-Channel Power MOSFET OptiMOS BSZ019N03LS Data Sheet 2.1, 2011-09-21 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSZ019N03LS 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
|
Original
|
BSZ019N03LS
OptiMOSTM30V
726-BSZ019N03LS
019N03L
BSZ019N03LS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSM2N7002K 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Source 3. Drain VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (mA) 2 @ VGS = 10V 300 4 @ VGS = 4.5V
|
Original
|
TSM2N7002K
OT-23
TSM2N7002KCX
|
PDF
|
GS 069 pwm
Abstract: fan5018 AN-6003 FAN5009 FAN5009M FAN5009MP FAN5019 FDD6696 VR10
Text: www.fairchildsemi.com FAN5009 Dual Bootstrapped 12V MOSFET Driver Features General Description • Drives N-channel High-Side and Low-Side MOSFETs in a synchronous buck configuration • 12V High-Side and 12V Low-Side Drive • Internal Adaptive “Shoot-Through” Protection
|
Original
|
FAN5009
500kHz
FAN5009
DS505009
GS 069 pwm
fan5018
AN-6003
FAN5009M
FAN5009MP
FAN5019
FDD6696
VR10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFN 72N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions
|
Original
|
72N55Q2
OT-227
E153432
728B1
123B1
728B1
065B1
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: CSD17312Q5 www.ti.com SLPS256A – MARCH 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples: CSD17312Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance
|
Original
|
CSD17312Q5
SLPS256A
|
PDF
|
71079
Abstract: s101-05
Text: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY VDS V N-Channel 20 P-Channel -8 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 0.600 at VGS = - 4.5 V - 0.60 0.850 at VGS = - 2.5 V - 0.50
|
Original
|
Si1555DL
2002/95/EC
OT-363
SC-70
Si1555DL-T1-E3
Si1555DL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
71079
s101-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CSD25481F4 SLPS420B – SEPTEMBER 2013 – REVISED FEBRUARY 2014 CSD25481F4, 20 V P-Channel FemtoFET MOSFET 1 Features • • • • 1 • • • • . Product Summary Ultra-Low On Resistance Ultra-Low Qg and Qgd High Operating Drain Current Ultra-Small Footprint 0402 Case Size
|
Original
|
CSD25481F4
SLPS420B
CSD25481F4,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CSD23381F4 SLPS450B – OCTOBER 2013 – REVISED FEBRUARY 2014 CSD23381F4, 12 V P-Channel FemtoFET MOSFET 1 Features • • • • 1 • • • • . Product Summary Ultra-Low On Resistance Ultra-Low Qg and Qgd High Operating Drain Current Ultra-Small Footprint 0402 Case Size
|
Original
|
CSD23381F4
SLPS450B
CSD23381F4,
|
PDF
|
IRFIBF20G
Abstract: No abstract text available
Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance
|
Original
|
IRFIBF20G,
SiHFIBF20G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFIBF20G
|
PDF
|
4943n
Abstract: No abstract text available
Text: NTMFS4943N Power MOSFET 30 V, 41 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
|
Original
|
NTMFS4943N
NTMFS4943N/D
4943n
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECH8652 Ordering number : ENA0935 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8652 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.
|
Original
|
ECH8652
ENA0935
900mm2â
A0935-4/4
|
PDF
|
ufn330
Abstract: No abstract text available
Text: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching
|
OCR Scan
|
UFN332
UFN333
UFN330
UFN331
UFN332
ufn330
|
PDF
|
lts 542
Abstract: UFN540 FN640
Text: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.
|
OCR Scan
|
UFN540
UFN541
UFN542
UFN543
lts 542
UFN540
FN640
|
PDF
|
UFNF430
Abstract: diode ed 2437 UFNF432
Text: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.
|
OCR Scan
|
UFNF430
UFNF431
UFNF432
UFNF433
UFNF430
diode ed 2437
UFNF432
|
PDF
|
