marking c08
Abstract: CMLDM8002A CMLDM8002AJ MARKING CODE 24 TRANSISTOR
Text: Central CMLDM8002A CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MARKING CODE: CMLDM8002A: C08 CMLDM8002AJ: CJ8 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002A and CMLDM8002AJ are dual chip Enhancement-mode
|
Original
|
CMLDM8002A
CMLDM8002AJ
OT-563
CMLDM8002A:
CMLDM8002AJ:
CMLDM8002A
CMLDM8002AJ
CMLDM8002AJ,
500mA
marking c08
MARKING CODE 24 TRANSISTOR
|
PDF
|
specifications of MOSFET
Abstract: on semiconductor marking code sot MOSFET 2KV marking code sot563 C08 marking Small Signal MOSFETs all mosfet equivalent book p-channel mosfet P-channel MOSFET 50V, 10 A rds code l02
Text: PRODUCT announcement Small Signal MOSFETs TLP Tiny Leadless Package SOT-563 SOT-883L TLM621H Single or Dual (Single) (Single) features • Single and Dual configurations Sample Devices • N-Channel and P-Channel devices available • Dual MOSFET with ESD protection (CMLDM7003)
|
Original
|
OT-563
OT-883L
TLM621H
CMLDM7003)
280mA,
OT-563
CMLDM7003
CMLDM8002A
CMLDM7002A
specifications of MOSFET
on semiconductor marking code sot
MOSFET 2KV
marking code sot563
C08 marking
Small Signal MOSFETs
all mosfet equivalent book
p-channel mosfet
P-channel MOSFET 50V, 10 A rds
code l02
|
PDF
|
TSM4NB60CP
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
|
Original
|
TSM4NB60
O-220
ITO-220
O-251
TSM4NB60
O-252
TSM4NB60CP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
|
Original
|
TSM4NB60
O-220
ITO-220
O-251
TSM4NB60
O-252
|
PDF
|
mosfet marking code c0
Abstract: TSM4NB65
Text: TSM4NB65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω)(max) ID (A) 650 3.37 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
|
Original
|
TSM4NB65
O-220
ITO-220
O-251
TSM4NB60
O-252
mosfet marking code c0
TSM4NB65
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.25 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This
|
Original
|
TSM3N90
O-220
ITO-220
O-251
O-252
|
PDF
|
TO-252 N-channel MOSFET
Abstract: 600v 4A mosfet
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4N60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
|
Original
|
TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
TO-252 N-channel MOSFET
600v 4A mosfet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
|
Original
|
TSM4NB60
O-220
ITO-220
O-251
TSM4NB60
O-252
|
PDF
|
DIODE D12
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
|
Original
|
TSM4NB60
O-220
ITO-220
O-251
O-252
TSM4NB60
TSM4NB60CH
TSM4NB60CP
TSM4NB60CZ
O-251
DIODE D12
|
PDF
|
mosfet Marking Code b3
Abstract: diode c12 marking c12
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
|
Original
|
TSM4NB60
O-220
ITO-220
O-251
O-252
TSM4NB60
TSM4NB60CH
TSM4NB60CP
TSM4NB60CZ
O-251
mosfet Marking Code b3
diode c12
marking c12
|
PDF
|
DIODE F10
Abstract: TSM4N60CZ TO-252 N-channel MOSFET
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
|
Original
|
TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
DIODE F10
TSM4N60CZ
TO-252 N-channel MOSFET
|
PDF
|
mosfet "marking code 44"
Abstract: TSM2NB60CP
Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
|
Original
|
TSM2NB60
O-220
ITO-220
O-251
O-252
TSM2NB60
TSM2NB60CH
TSM2NB60CP
TSM2NB60CZ
O-251
mosfet "marking code 44"
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
|
Original
|
TSM4NB60
O-220
ITO-220
O-251
O-252
TSM4NB60
TSM4NB60CH
TSM4NB60CP
TSM4NB60CZ
O-251
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
|
Original
|
TSM2NB60
O-220
ITO-220
O-251
TSM2NB60
O-252
|
PDF
|
|
|
ITO-220
Abstract: TSM4N60CH
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
|
Original
|
TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
ITO-220
TSM4N60CH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 500 V RDS(on) (max) 1.4 Ω Qg 25 nC TO-252 (DPAK) Features Block Diagram ● Low RDS(ON) 1.4Ω (Max.)
|
Original
|
TSM6N50
ITO-220
O-251
O-252
TSM6N50CI
50pcs
TSM6N50CP
TSM6N50CH
|
PDF
|
B11 marking code
Abstract: 1A 700V MOSFET mosfet 700V 2A
Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
|
Original
|
TSM2N70
O-220
O-251
O-252
TSM2N70
B11 marking code
1A 700V MOSFET
mosfet 700V 2A
|
PDF
|
TSM60N900CP
Abstract: No abstract text available
Text: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
|
Original
|
TSM60N900
ITO-220
O-251
O-252
TSM60N900CI
50pcs
TSM60N900CH
75pcs
TSM60N900CP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
|
Original
|
TSM60N900
ITO-220
O-251
O-252
TSM60N900CI
50pcs
TSM60N900CH
75pcs
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
|
Original
|
TSM70N900
ITO-220
O-251
O-252
TSM70N900CI
50pcs
TSM70N900CH
75pcs
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
|
Original
|
TSM70N600
ITO-220
O-251
O-252
TSM70N600CI
50pcs
TSM70N600CH
75pcs
|
PDF
|
TSM60N600CP
Abstract: No abstract text available
Text: TSM60N600 600V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.6 Ω Qg 13 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
|
Original
|
TSM60N600
ITO-220
O-251
O-252
TSM60N600CI
50pcs
TSM60N600CH
75pcs
TSM60N600CP
|
PDF
|
marking YD
Abstract: BF999
Text: Silicon N-Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm tape BF 999 LB Q 62702-F38 Q62702-F1132 M axim um ratings Symbol
|
OCR Scan
|
62702-F38
Q62702-F1132
marking YD
BF999
|
PDF
|
K2094
Abstract: marking 82T 0014b34 2SK2094 2SK2094F5
Text: 2SK2094F5 Silicon N-channel MOSFET Features Dimensions Units : mm • available in C P T F5 package • p ackage marking: K2094-A-Q, w here ★ is hFE code and □ is lot num ber • low on-resistance 2SK2094 (C PT F5) • fast switching speed • w ide S O A (S a fe O perating A rea)
|
OCR Scan
|
2SK2094F5
K2094
2SK2094
0G14ti3b
0014b37
marking 82T
0014b34
2SK2094
2SK2094F5
|
PDF
|
