bv42 transistor
Abstract: bv42 27e5 LM324 FDSS2407 injector driver 33E10 marking n9 8-pin PIN diode Pspice model
Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate
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FDSS2407
FDSS2407
bv42 transistor
bv42
27e5
LM324
injector driver
33E10
marking n9 8-pin
PIN diode Pspice model
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TC227
Abstract: No abstract text available
Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate
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FDSS2407
FDSS2407
TC227
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SCH1412
Abstract: SCH2812 SS05015SH
Text: SCH2812 Ordering number : ENN8105 SCH2812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET SCH1412 and a Schottky barrier diode (SS05015SH)
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SCH2812
ENN8105
SCH1412)
SS05015SH)
SCH1412
SCH2812
SS05015SH
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IRFP150N
Abstract: No abstract text available
Text: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,
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IRFP150N
O-247
IRFP150N
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Si2303CDS
Abstract: 083b SI2303CDS-T1 marking CODE MH SI2303CDST1GE3 SI2303CDS-T1-GE3
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
Si2303CDS-T1-GE3
11-Mar-11
083b
SI2303CDS-T1
marking CODE MH
SI2303CDST1GE3
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Untitled
Abstract: No abstract text available
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
Si2303CDS-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
Si2303CDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Si2303CDS
Abstract: No abstract text available
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
Si2303CDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Si2303CDS
Abstract: No abstract text available
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
Si2303CDS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Si2303CDS
Abstract: 083b
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
Si2303CDS-T1-GE3
18-Jul-08
083b
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Si2303CDS
Abstract: Si2303CDS-T1-E3
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
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Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: 333 -8 PSMN014-60LS DF N3 N-channel DFN3333-8 60 V 14 mΩ standard level MOSFET Rev. 3 — 8 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications
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PSMN014-60LS
DFN3333-8
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Untitled
Abstract: No abstract text available
Text: 333 -8 PSMN013-30LL DF N3 N-channel DFN3333-8 30 V 13 mΩ logic level MOSFET Rev. 5 — 8 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN013-30LL
DFN3333-8
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Untitled
Abstract: No abstract text available
Text: 333 -8 PSMN5R8-30LL DF N3 N-channel DFN3333-8 30 V 5.8 mΩ logic level MOSFET Rev. 3 — 12 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN5R8-30LL
DFN3333-8
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Untitled
Abstract: No abstract text available
Text: 333 -8 PSMN3R8-30LL DF N3 N-channel DFN3333-8 30 V 3.7 mΩ logic level MOSFET Rev. 4 — 12 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN3R8-30LL
DFN3333-8
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Untitled
Abstract: No abstract text available
Text: 333 -8 PSMN017-30LL DF N3 N-channel DFN3333-8 30 V 17 mΩ logic level MOSFET Rev. 4 — 12 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN017-30LL
DFN3333-8
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max10027
Abstract: No abstract text available
Text: 333 -8 PSMN035-100LS DF N3 N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET Rev. 3 — 12 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications
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PSMN035-100LS
DFN3333-8
drain12
max10027
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Untitled
Abstract: No abstract text available
Text: 333 -8 PSMN7R0-40LS DF N3 N-channel DFN3333-8 40 V 7.0 mΩ standard level MOSFET Rev. 3 — 13 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications
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PSMN7R0-40LS
DFN3333-8
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Untitled
Abstract: No abstract text available
Text: 333 -8 PSMN9R0-30LL DF N3 N-channel DFN3333-8 30 V 9 mΩ logic level MOSFET Rev. 5 — 13 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN9R0-30LL
DFN3333-8
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Untitled
Abstract: No abstract text available
Text: 333 -8 PSMN023-80LS DF N3 N-channel DFN3333-8 80 V 23 mΩ standard level MOSFET Rev. 3 — 12 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications
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PSMN023-80LS
DFN3333-8
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EMH2401
Abstract: IT10403 it10408
Text: EMH2401 Ordering number : EN8728 N-Channel Silicon MOSFET EMH2401 General-Purpose Switching Device Applications Features • • The EMH2401 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
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EMH2401
EN8728
EMH2401
900mm2
IT10403
it10408
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Untitled
Abstract: No abstract text available
Text: FDD8878 / FDU8878 N-Channel PowerTrench MOSFET 30V, 40A, 15mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8878
FDU8878
O-252
O-252)
O-251AA)
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Untitled
Abstract: No abstract text available
Text: SENTECH C OR P SflE » • filBS lBS POWER MOSFET’s IN HERMETIC 12 PIN ISOLATED PACKAGE □ D 0 2 cm SM4F151S* SM4F351S* 341 SM4F251S* SM4F451S* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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SM4F151S*
SM4F351S*
SM4F251S*
SM4F451S*
T0254AA
T0258AA
FT0258AA
HDS100
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