Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET PA LEAKAGE Search Results

    MOSFET PA LEAKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET PA LEAKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7272

    Abstract: FK18SM-12 QJS0660001 MOSFET "CURRENT source" power mosfet 600v 600A
    Text: QJS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Single FK Series Mosfet Hermetic Module 600 Amperes/600 Volts Description: Powerex Mosfet Hermetic modules are designed for use in switching applications. All components are located in a hermetically sealed


    Original     		PDF QJS0660001 Amperes/600 FK18SM-12 -600A/ 7272 QJS0660001 MOSFET "CURRENT source" power mosfet 600v 600A

    BUK9C10-55BIT

    Abstract: No abstract text available
    Text: D2 PA K-7 BUK9C10-55BIT N-channel TrenchPLUS logic level FET 6 August 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a D2PAK-7 package using TrenchPLUS MOSFET technology. The device includes TrenchPLUS current sensing and integrated diodes


    Original     		PDF BUK9C10-55BIT AEC-Q101 BUK9C10-55BIT

    JESD22-A115

    Abstract: 3C230L 3C230
    Text: LF PA K PSMN3R2-30YLC N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


    Original     		PDF PSMN3R2-30YLC JESD22-A115 3C230L 3C230

    1C530L

    Abstract: 1C530L mosfet
    Text: LF PA K PSMN1R5-30YLC N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


    Original     		PDF PSMN1R5-30YLC 1C530L 1C530L mosfet

    Untitled

    Abstract: No abstract text available
    Text: LF PA K PSMN4R1-30YLC N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


    Original     		PDF PSMN4R1-30YLC

    1C230L

    Abstract: PSMN1R2-30YLC JESD22-A115
    Text: LF PA K PSMN1R2-30YLC N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


    Original     		PDF PSMN1R2-30YLC 1C230L PSMN1R2-30YLC JESD22-A115

    4C130L

    Abstract: JESD22-A115 435M
    Text: LF PA K PSMN4R1-30YLC N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


    Original     		PDF PSMN4R1-30YLC 4C130L JESD22-A115 435M

    Untitled

    Abstract: No abstract text available
    Text: LF PA K PSMN2R2-30YLC N-channel 30 V 2.2mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 17 March 2011 Preliminary data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


    Original     		PDF PSMN2R2-30YLC

    1C530L

    Abstract: JESD22-A115 PSMN1R5-30YLC 1C530L mosfet
    Text: LF PA K PSMN1R5-30YLC N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


    Original     		PDF PSMN1R5-30YLC 1C530L JESD22-A115 PSMN1R5-30YLC 1C530L mosfet

    2C230L

    Abstract: psmn2r2-30ylc JESD22-A115 30YLC
    Text: LF PA K PSMN2R2-30YLC N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 02 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


    Original     		PDF PSMN2R2-30YLC 2C230L psmn2r2-30ylc JESD22-A115 30YLC

    2C630L

    Abstract: JESD22-A115 PSMN2R6-30YLC
    Text: LF PA K PSMN2R6-30YLC N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


    Original     		PDF PSMN2R6-30YLC 2C630L JESD22-A115 PSMN2R6-30YLC

    Untitled

    Abstract: No abstract text available
    Text: LF PA K PSMN016-100YS N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Rev. 4 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is


    Original     		PDF PSMN016-100YS

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 3 June 2014 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56


    Original     		PDF PSMN1R0-40YLD LFPAK56 LFPAK56

    3C730L

    Abstract: JESD22-A115 psmn3r7-30ylc
    Text: LF PA K PSMN3R7-30YLC N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


    Original     		PDF PSMN3R7-30YLC 3C730L JESD22-A115 psmn3r7-30ylc

    Untitled

    Abstract: No abstract text available
    Text: Si2333DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.032 @ VGS = -4.5 V -5.3 0.042 @ VGS = -2.5 V - 4.6 0.059 @ VGS = -1.8 V - 3.9 APPLICATIONS D Load Switch D PA Switch


    Original     		PDF Si2333DS O-236 OT-23) S-21789â 07-Oct-02

    COM150A

    Abstract: COM250A COM350A COM450A diode GF M
    Text: COM150A COM350A COM250A COM450A COTS COMMERCIAL OFF-THE-SHELF POWER MOSFET IN A TO-254AA PA C K A G E 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on)


    Original     		PDF COM150A COM350A COM250A COM450A O-254AA COM150A COM250A COM4500 COM350A COM450A diode GF M

    Untitled

    Abstract: No abstract text available
    Text: PA K 33 PSMN4R4-30MLC LF N-channel 30 V 4.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 2 — 6 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is


    Original     		PDF PSMN4R4-30MLC LFPAK33

    Untitled

    Abstract: No abstract text available
    Text: PA K 33 PSMN2R8-25MLC LF N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 1 — 16 May 2012 Preliminary data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is


    Original     		PDF PSMN2R8-25MLC LFPAK33

    Untitled

    Abstract: No abstract text available
    Text: IRFS340A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VDS= 400V Lower R0SK0N) : 0.437 £2 (Typ.) - 400 V


    OCR Scan     		PDF IRFS340A

    p-channel 250V 16A power mosfet

    Abstract: p-channel 250V power mosfet SFP9614 VGS-30V PCHANNEL LSC16
    Text: SFP9614 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVqss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 pA Max. @ VDS = -250V


    OCR Scan     		PDF SFP9614 -250V O-220 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D p-channel 250V 16A power mosfet p-channel 250V power mosfet SFP9614 VGS-30V PCHANNEL LSC16

    Untitled

    Abstract: No abstract text available
    Text: SSF8N80A Advanced Power MOSFET FEATURES BVdss = 800 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA Max. @ VDS = 800V


    OCR Scan     		PDF SSF8N80A

    SSF4N90AS

    Abstract: EL DRIVER 3-STAGE
    Text: SSF4N90AS Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS= 900V


    OCR Scan     		PDF SSF4N90AS ib4142 0DM0201 003b333 003b33M D03b335 SSF4N90AS EL DRIVER 3-STAGE

    tvn 610

    Abstract: SSF45N20A
    Text: SSF45N20A Advanced Power MOSFET FEATURES BV0SS = 200 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS = 200V


    OCR Scan     		PDF SSF45N20A 003b333 003b33M D03b335 tvn 610 SSF45N20A

    c125t

    Abstract: SSH4N80
    Text: SSH4N80AS Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 800V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA M ax. @ VM = 800V


    OCR Scan     		PDF SSH4N80AS c125t SSH4N80