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    MOSFET S72 Search Results

    MOSFET S72 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET S72 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING CODE JF

    Abstract: No abstract text available
    Text: New Product Si5853CDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a - 20 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		PDF Si5853CDC Si5853CDC-T1-E3 08-Apr-05 MARKING CODE JF

    Si5853CDC

    Abstract: Vishay DaTE CODE 1206-8 72334/MTN
    Text: New Product Si5853CDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a - 20 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		PDF Si5853CDC 18-Jul-08 Vishay DaTE CODE 1206-8 72334/MTN

    Mosfet

    Abstract: 2N7002KB
    Text: 2N7002KB 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS on 2Ω(max.) ID 0.3A SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF 2N7002KB OT-23 Mosfet 2N7002KB

    Marking Code S72

    Abstract: No abstract text available
    Text: 2N7002W N-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This device is an N-Channel enhancement-mode MOSFET in the industrystandard, small surface mount SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3


    Original     		PDF 2N7002W OT-323 SC-70) OT-323 2N7002W T/R13 Marking Code S72

    SiE854DF-T1-E3

    Abstract: SIE854DF
    Text: New Product SiE854DF Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package


    Original     		PDF SiE854DF 18-Jul-08 SiE854DF-T1-E3

    S7267

    Abstract: SIE854DF
    Text: New Product SiE854DF Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package


    Original     		PDF SiE854DF 08-Apr-05 S7267

    72511

    Abstract: SiE850DF
    Text: New Product SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package


    Original     		PDF SiE850DF 08-Apr-05 72511

    SiE850DF

    Abstract: 72511
    Text: New Product SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package


    Original     		PDF SiE850DF 18-Jul-08 72511

    74248

    Abstract: MARKING 66b Si4941EDY
    Text: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS


    Original     		PDF Si4941EDY Si4941EDY-T1-E3 08-Apr-05 74248 MARKING 66b

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4943BDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 8.4 0.031 at VGS = - 4.5 V - 6.7 • TrenchFET Power MOSFET • 100 % Rg Tested RoHS APPLICATIONS COMPLIANT


    Original     		PDF Si4943BDY Si4943BDY-T1-E3 18-Jul-08

    74248

    Abstract: 74248 datasheet Si4941EDY
    Text: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS


    Original     		PDF Si4941EDY Si4941EDY-T1-E3 18-Jul-08 74248 74248 datasheet

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS


    Original     		PDF Si4941EDY Si4941EDY-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7214DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 ID (A) 0.04 at VGS = 10 V 6.4 0.047 at VGS = 4.5 V 5.9 • TrenchFET Power MOSFET • 100 % Rg Tested • Optimized for High Efficiency Applications


    Original     		PDF Si7214DN Si7214DN-T1-E3 18-Jul-08

    74248

    Abstract: Si4941EDY 74248 datasheet
    Text: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS


    Original     		PDF Si4941EDY Si4941EDY-T1-E3 11-Mar-11 74248 74248 datasheet

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4943BDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 8.4 0.031 at VGS = - 4.5 V - 6.7 • TrenchFET Power MOSFET • 100 % Rg Tested RoHS APPLICATIONS COMPLIANT


    Original     		PDF Si4943BDY Si4943BDY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA415DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 12a 0.051 at VGS = - 2.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC70 Package


    Original     		PDF SiA415DJ SC-70-6L-Single SiA415DJ-T1-E3 08-Apr-05

    SUD19P06-60

    Abstract: No abstract text available
    Text: New Product SUD19P06-60 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)d rDS(on) (Ω) 0.060 at VGS = - 10 V - 19 0.077 at VGS = - 4.5 V - 16.8 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 26 COMPLIANT


    Original     		PDF SUD19P06-60 O-252 SUD19P06-60-E3 08-Apr-05 SUD19P06-60

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-8m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0082 at VGS = 10 V 90d 58 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-8m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0082 at VGS = 10 V 90d 58 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 18-Jul-08

    ON148

    Abstract: 72508
    Text: SUP90N06-6m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.006 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUP90N06-6m0P O-220AB SUP90N06-6m0P-E3 18-Jul-08 ON148 72508

    Si3424BDV-T1-E3

    Abstract: No abstract text available
    Text: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT


    Original     		PDF Si3424BDV Si3424BDV-T1-E3 18-Jul-08

    Si1905BDH

    Abstract: marking DJ
    Text: New Product Si1905BDH Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.542 at VGS = - 4.5 V - 0.63 0.798 at VGS = - 2.5 V - 0.52 1.2 at VGS = - 1.8 V - 0.20 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS


    Original     		PDF Si1905BDH OT-363 SC-70 Si1905BDH-T1-E3 18-Jul-08 marking DJ

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB415DK Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 30 ID (A)a, f 0.087 at VGS = - 10 V -9 0.158 at VGS = - 4.5 V - 7.2 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package


    Original     		PDF SiB415DK SC-75 SC-75-6L-Single SiB415DK-T1-E3 08-Apr-05

    Si1905BDH

    Abstract: No abstract text available
    Text: New Product Si1905BDH Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.542 at VGS = - 4.5 V - 0.63 0.798 at VGS = - 2.5 V - 0.52 1.2 at VGS = - 1.8 V - 0.20 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS


    Original     		PDF Si1905BDH OT-363 SC-70 Si1905BDH-T1-E3 08-Apr-05