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    MOSFET VN 10 Search Results

    MOSFET VN 10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET VN 10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DMN21D2UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits N EW PRODU CT AD CE FO RM AT NN AV DA VN AN C EI NI N FO RM A ITOI O Product Summary V BR DSS • • • • • • • • • • ID max RDS(ON) max TA = 25°C 0.99Ω @ VGS = 4.5V


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    PDF DMN21D2UFB 760mA 700mA 500mA 350mA DS35564

    Untitled

    Abstract: No abstract text available
    Text: VN B14N04/K14N04FM VNP14N04FI/VNV14N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B14N 04 VN K14N 04FM VNP14N 04FI VN V14N 04 Vclamp 42 42 42 42 V V V V R D S o n 0 .0 7 0 .0 7 0 .0 7 0 .0 7 Q. a n Cl 11im 14 14 14 14 A A A A . . . . . .


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    PDF B14N04/K14N04FM VNP14N04FI/VNV14N04 VNP14N O-263 VNB14N04, VNK14N04FM, VNP14N04FI VNV14N04 14N04FI-VNV14N04 PowerSO-10

    VNB10N07-VNK10N07FM-VNP10N07F1-VNV10N07

    Abstract: 10n07 VNP10N
    Text: ¿5 7 TY P E VNB10N07 VNK10N07FM VNP10N 07FI VNV10N07 S G S -T H O M S O N VN B 10N07/K 10N07FM :LICTIB@10 i VN P10N07FI/VN V10N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET RDS on Vciamp 70 70 70 70 V V V V 0.1 n 0.1 n 0.1 n 0.1 a lllm 10 10 10 10


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    PDF VNB10N07 VNK10N07FM VNP10N VNV10N07 VNB10N07, VNK10N07FM, VNP10N07FI VNV10N07 VNB10N07-VNK10N07FM-VNP10N07F1-VNV10N07 10n07

    Untitled

    Abstract: No abstract text available
    Text: VN B10N07/K10N07FM VNP10N07FI/VNV10N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B10N 07 VNK1 0 N 07 F M VNP1 0 N 0 7 F I VN V10N 07 Vclamp 70 70 70 70 V V V V R D S o n 0.1 0.1 0.1 0.1 Q. a n Cl 11im 10 10 10 10 A A A A . . . . . . LINEAR CURRENT LIMITATION


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    PDF B10N07/K10N07FM VNP10N07FI/VNV10N07 O-263 VNB10N07, VNK10N07FM, VNP10N07FI VNV10N07 Vertical10N07FI-VNV10N07 PowerSO-10

    Untitled

    Abstract: No abstract text available
    Text: VNP49N04FI VNB49N04 / VNV49N04 “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V CLAMP R DS ON • l im 42 V 20 m£2 49 A VNP49N 04FI VN B49N 04 VN V49N 04 „ „ „ „ „ „ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP


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    PDF VNP49N04FI VNB49N04 VNV49N04 VNP49N VNP49N04FI, VNB49N04, VNV49N04 O-263 PowerSO-10â VNP49N04FI

    50n04

    Abstract: SGS-Thomson mosfet
    Text: £S 7 SGS-THOMSON * 7# VN H 50N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET T A R G E T DATA TYPE VN H 50N 04 • ■ ■ . ■ . ■ ■ > . Vclamp 40 V R d S o ii 0 .0 1 2 n him 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION


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    PDF O-218 O-218 VNH50N04 50n04 SGS-Thomson mosfet

    Untitled

    Abstract: No abstract text available
    Text: VNP28N04FI VNB28N04/VNV28N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP28N 04FI VN B28N 04 VN V28N 04 42 V 42 V 42 V 0.0 35 Q. 0 .0 3 5 a 0.0 35 n 28 A 28 A 28 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN


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    PDF VNP28N04FI VNB28N04/VNV28N04 VNP28N VNP28N04FI, VNB28N04 VNV28N04 MOSFETSNB28N04-VNV28N04 PowerSO-10

    10N06

    Abstract: D10N06 diode gc6
    Text: S G S -T H O M Î 7 S O N V N D 1 0 N 0 6 /V N D 1 0 N 0 6 -1 ilL Ifê T O O T O iS S V N P 1 0 N 0 6 F I / K 1 0 N 0 6 F M ’’OMNIFET’: FULLY AUTOPROTECTED POWER MOSFET TY P E VN D 10N06 VND10N06-1 VN P 10N 06FI VNK 10N06FM . . . • . . . . . Vclamp


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    PDF 10N06 VND10N06-1 10N06FM VND10N06, VND10N06-1, VNP10N06FI VNK10N06FM D10N06 diode gc6

    J237

    Abstract: VNK10N06 AUTOPROTECTED POWER MOSFET 3.2 zener diode OF SGS-THOMSON
    Text: £ÿj SCS-THOMSON lœ iILIC TK O K liei V N K 10N06 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET ADVANCE DATA TYPE VN K 10N 06 . . . . . . . . . Vclamp RDS on llim 60 V 0 .15 £2 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION


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    PDF VNK10N06 VNK10N06 SC07650 10/xs, SC07660 00770n OT-82 J237 AUTOPROTECTED POWER MOSFET 3.2 zener diode OF SGS-THOMSON

    VNP10N07 equivalent

    Abstract: No abstract text available
    Text: I / = T miiM MoemiLEeiriSMiniBi S G S - 1 H M S 0 N VNP10N07 "OMIMIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN P10N 07 • . ■ ■ . . . ■ . . V clamp RDS on llim 70 V o .i n 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION


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    PDF VNP10N07 O-220 VNP10N07 VNP10N07 equivalent

    SGS-Thomson mosfet

    Abstract: No abstract text available
    Text: H Z! SGS-THOMSON ESII lS@IILICTi B!lllGi VNH100N04 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE Velamp RoS on him VN H 100N 04 42 V 0 .0 1 2 n 100 A . • ■ . ■ . ■ . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION


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    PDF VNH100N04 O-218 O-218 VNH100N04 SGS-Thomson mosfet

    2222ll

    Abstract: 10LLS ST C 236 DIODE 0605T
    Text: — _ VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (Q ) V GS(th) (V) lD Min (A) VN1 OLE 5 @ V GS = 10 V 0.8 to 2.5 0.38 VN 10LLS 5 @ V GS = 10 V 0.8 to 2.5


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    PDF VN10LE/LLS, VN0605T, VN0610LL, VN2222LL 10LLS 0605T 0610LL 2222LL S-58620-- 21-Jun-99 ST C 236 DIODE

    vniokm

    Abstract: MOSFET VN2222L
    Text: VN0610L, VNIOKE/M/T, VN2222L N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary Part Number r DS on Max (Q) VGS(th)iV) Id (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VNÎ0KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V 0.8 to 2.5


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    PDF VN0610L, VN2222L VN0610L VN2222L O-206AC S-52426--Rev. 14-Apr-97 VN10KE/M/T, vniokm MOSFET VN2222L

    n713

    Abstract: vnp49n
    Text: •THOMSON VNP49N04FI MOfôlSLl&rmfflDCS VNB49N04/VNV49N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp VNP49N 04FI VNB49N04 VN V49N 04 42 V 42 V 42 V R d S< o i i 0.02 Q 0.02 Cl 0.02 £2 lllm 49 A 49 A 49 A . . . . . LINEAR CURRENT LIMITATION


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    PDF VNP49N VNB49N04/VNV49N04 VNB49N04 VNP49N04FI, VNV49N04 n713

    Untitled

    Abstract: No abstract text available
    Text: e r SCS-THOMCON "* 1 Ê M SÜ iilLIC T M liiei VNH70N07 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TA R G ET DATA TYPE VN H 70N 07 . . . . . . . . • . Vclamp 70 V R0S on 0 .0 1 5 n lllm 70 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION


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    PDF VNH70N07 O-218 O-218 VNH70N07

    88AFD

    Abstract: No abstract text available
    Text: Tem ic 2N6661/VN88AFD Se c o n du c t o r s it i N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR DSS Min (V ) rus< on) M a x ( f i ) V g S(Ui ) (V ) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 I d (A ) 0.9 VN 88AFD 80 4 @ VGs = 10 V


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    PDF 2N6661/VN88AFD 2N6661 88AFD P-37655-- 25-Jul-94

    FM15TF-9

    Abstract: JRC 062 gun diode bias symbol JRC FF 30
    Text: MITSUBISHI MOSFET MODULE { F M 1 5 T F -9 , - 1 0 MEDIUM POWER SWITCHING USE INSULATED TYPE Dimensions in mm OUTUNE DRAWING 90 6 116 1 1 6 13 FM15TF-9, -10 GuN S jh 1G vN SvN G w N Sw N _ _64_ ^ ' 76 Tab # 250. t = 0.8 T ab # 110, t - 0.5 B h • Id . 15A


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    PDF FM15TF-9, E80276 E80271 FM15TF-9 JRC 062 gun diode bias symbol JRC FF 30

    100N04

    Abstract: p 471 mosfet
    Text: c ? SGS-IHOMSON • v # M€ra§ ilLiCTI3@ilû S VNW100N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V c la m p R D S o n ) him VN W 100N 04 42 V 0 .0 1 2 n 100 A • . . ■ . ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION


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    PDF VNW100N04 O-247 VNW100N04 100N04 p 471 mosfet

    2222LM

    Abstract: 0610LL vn10 N10LM
    Text: T em ic VNlO/0605/0610/2222 Series S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary P a rt N um ber rDSion M a x Q ) VG S(th) (V ) I d M in (A ) VN 10LE 5 @ V Gs = 10 V


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    PDF VNlO/0605/0610/2222 VN10LE VN10LM VN0605T 0610LL 2222LL VN2222LM VN0610LL 2222LM vn10 N10LM

    Untitled

    Abstract: No abstract text available
    Text: rz J Ä T# S C S -T H O M S O N [M G IM llL iO T » ! V N H 100N 04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TA R G E T D A T A TYPE Vclamp RDS on 1lim VN H 100N04 42 V 0 .0 1 2 Û 100 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN


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    PDF 100N04 O-218 VNH100N04 VNH100N04 7T2T237

    2sJ365

    Abstract: No abstract text available
    Text: 60V->U-X /W-MOSFET ft * 60V SERIES POWER MOSFET x>A >X^>h» • W B T fö H O U T L IN E D IM E N S IO N S 2SJ365 F 2 E 6 P -60v -2 a / / / ■ ' vN R A TIN G S ■ A b s o lu te Maxim um R a tin g s m Item a f!f; ■(£inibii! Storage Temperature -f- \


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    PDF 2SJ365 --10V, 2sJ365

    kn2000

    Abstract: VNH50N04
    Text: Æ T S G S -T H O M S O N lerasmLHCTMDei V N H 5 0 N04 "OMNIFET”: FULLY AUTQPROTECTED POWER MOSFET TARGET DATA TYPE VN H 50N 04 . . . . . . . . . . Vclamp R D S o n him 40 V 0 .0 1 2 £2 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION


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    PDF VNH50N04 VNH50N04 O-218 O-218 OT-93) 7T2T237 DD770QT kn2000

    FZ 44 NS

    Abstract: vn 300 T VNP5N07 mosfet vn 10 vnk5n07 SGS-Thomson mosfet ipak VN MOSFET D5N07-1
    Text: SGS-THOMSON MDO^miCTIfMOlgl VND5N07/VND5N07-1 VNP5N07FI/K5N07FM "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND5N07 VN D 5N 07-1 VNP5N07FI VNK5N07FM Vclamp 70 70 70 70 V V V V RDS on 0 .2 0 .2 0 .2 0 .2 a. Q. a. Q. 11im 5 5 5 5 A A A A . . . . . .


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    PDF VND5N07/VND5N07-1 VNP5N07FI/K5N07FM VND5N07 VNP5N07FI VNK5N07FM VND5N07, VND5N07-1, D5N07/VND5N07-1 FZ 44 NS vn 300 T VNP5N07 mosfet vn 10 vnk5n07 SGS-Thomson mosfet ipak VN MOSFET D5N07-1

    50n04

    Abstract: 50N04A
    Text: r z 7 Ä T# S G S R - T H O M S O N Î L i M ! 0 gS V N W 50N04A ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp R D S (o n 11i m VN W 50N 04A 42 V 0.0 12 Î2 50 A . LINEAR CURRENT LIMITATION . THERMAL SHUT DOWN . SH O R TC IR C U IT PROTECTION


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    PDF 50N04A O-247 50N04A 50n04