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    MOTOROLA MN TRANSISTOR Search Results

    MOTOROLA MN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA MN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    w21 transistor

    Abstract: 2N3764 2N3764JTX MIL-19500 MOTOROLA LON motorola MN transistor Motorola transistor 358
    Text: . MoToRom Order this document by 2N3764~WD SEMICONDUCTOR TECHNICAL DATA ● 2N3764JTX, JTXV, JANS Processed per MIL+-19500/396 PNP Silicon Smal14ignal Transistor .designed for genera~urpose switching applications. ● Emtisr+ase Vohge * Colleotor Current — Cotinuous


    Original     		PDF 2N3764 2N3764JTX, Smal14ignal TW06AB 1PHW4101 2N37WTWD w21 transistor 2N3764JTX MIL-19500 MOTOROLA LON motorola MN transistor Motorola transistor 358

    Q2N44

    Abstract: 06AF 2N44 motorola MN transistor 2N4416AJTX
    Text: MOTOROU Order this document by2N416AJTWD SEMICONDUCTOR TECHNICAL DATA o 2N4416AJTX, JTXV Processed per MlL-l 9500/428 N+hannel, Small+ignal Field Effect Transistor CASE 2W3, T=06AF .:’.~{.3” ELECTRICAL CHARACTERISTICS WA= #~@& *\A .*.<* Characterlstlc ., “$}$,w


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    2C918HV

    Abstract: chip die npn transistor
    Text: MOTOROM Orderthis document by 2C818HVD SEMICONDUCTOR TECHNICAL DATA e 2C918HV Chip NPN Silicon Smal14ignal Transistor ,. .deeigned for VHF operation .11 in tuned amptifier/oscillator applications. ● SmalHgnal Power Gain — 15 dB Min @ 200 MHz . Noise Figure — 6.0 dB Max@ 60MHz


    Original     		PDF 2C818HVD 2C918HV Smal14ignal 60MHz 10x15 10aim 2C91W/D chip die npn transistor

    tiac

    Abstract: 2N301 2N3013JTX
    Text: MOTOROU Order this document by 2N3013J~D SEMICONDUCTOR TECHNICAL DATA o 2N3013JTX Processed per MlL4-19500/287 NPN Silicon Smal14ignal Transistor .designed for genera+urpose switching applications. ,.i;:” .:*,%, ,1,>< ,\:.!\tf, , ., ,. Y MAXIMUM RATINGS


    Original     		PDF 2N3013J 2N3013JTX MlL4-19500/287 Smal14ignal CASE2243, 206AA 2D91Z 1PHW4101 2N301 tiac 2N3013JTX

    2N3506

    Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
    Text: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX, JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for genera~urpose switchingapplications. .,. ,. CASE 7W TM05AD r- mntinued)


    Original     		PDF bv2N850WWD 2N3506JTX, 2N3507JTX, TM05AD 2NW06 2NW07 300Vdc) 2N3506 1PHW41011-2 2NS50MWD 2N3506 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 15-ADO

    MPSW13

    Abstract: MPSW14 MPSW63 MPSW64
    Text: ——— MPSW63 MPSW64 — ONE WATT PNP SILICON DARLINGTON AMPLIFIER TRANSISTORS @ High DC Current hFE = Gain @ Ic = 10 mAdc 5,000 Min MPSW63 10,000 (Min) MPSW64 @ Co[lector-Emitter 30 Vdc(Min)@ V(BR)CES= @ Monolithic Breakdown Voltage — — Ic= 100pAdc


    Original     		PDF MPSW63 MPSW64 100pAdc MPSW63, MPSW13, MPSW14 E5830 MPSW13 MPSW14 MPSW63 MPSW64

    nt 101 thermostat

    Abstract: motorola UAA1016B UAA1016B triac BT162 motorola application notes uaa1016b triac analog control for inductive loads BT162-600 thermostat NT 101 bt162 BT162600
    Text: Order this document by UAA1016B/D UAA1016B Zero Voltage Controller The UAA1016B is designed to drive triacs with the Zero Voltage technique which allows RFI free power regulation of resistive loads. It provides the following features: • • • • • •


    Original     		PDF UAA1016B/D UAA1016B UAA1016B UAA1016B/D* nt 101 thermostat motorola UAA1016B triac BT162 motorola application notes uaa1016b triac analog control for inductive loads BT162-600 thermostat NT 101 bt162 BT162600

    W521

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR * 3 GREEN O TECHNICAL Order this document by MGSF3441XT1/D DATA LINE’” MGsF344iml Preliminary /nformation MotorolaPrefarred Device Low r~S(on Small-Signal MOSFE7S TMOS Single P-Channel Field Effect Transistors Pan of the GreenLineTM Potiolio


    Original     		PDF MGSF3441XT1/D MGsF344iml 30M75-2140 MGSF3441XT11D W521

    sot-223 body marking D K Q F

    Abstract: No abstract text available
    Text: Order this data sheet by BSP62T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the


    OCR Scan     		PDF BSP62T1/D OT-223 BSP62T1 inch/1000 BSP62T3 inch/4000 BSP52 BSP62T1 2PHX31198F-0 sot-223 body marking D K Q F

    MJ12010

    Abstract: MR91S
    Text: MOTOROLA SC XSTRS/R F 15 E 0 | t>3b72SM 00 05 1 0 3 2 | # MOTOROLA • SEMICONDUCTOR MJ12010 TECHNICAL DATA 10 A M P E R E HORIZONTAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . specifically designed for use in C R T deflection circuits. • Collector-Emitter Voltage — V c E X “ 950 Volts


    OCR Scan     		PDF 3b72SM MJ12010 11II1 MJ12010 MR91S

    TRANSISTOR mosfet IRF840

    Abstract: IRF840 irf8408 IRF841 3fc relay transistor irf840 Application of irf840 damn IRF842 D 843 Transistor
    Text: MOTOROLA SC XSTRS/R IM E F D I b3b?254 □ O ô T ? Q ci T - MOTOROLA IRF840 IRF841 IRF842 IRF843 • SEM ICO NDUCTOR TECHNICAL DATA P a rt N u m b e r N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR T h e s e T M O S P o w e r FETs a re d e s ig n e d f o r h ig h v o lta g e , h ig h


    OCR Scan     		PDF IRF840 IRF841 IRF842 IRF843 O-220) IRF841. TRANSISTOR mosfet IRF840 irf8408 3fc relay transistor irf840 Application of irf840 damn D 843 Transistor

    MRF309

    Abstract: fir 30 IC IL 1117
    Text: b3b?E5M 0Gfl754û L | 12E 0 | M OTO RO LA MOTOROLA SC XSTRS/R F SEM ICONDUCTOR TECHNICAL DATA MRF309 The RF Line 50 W -4 5 0 M H Z 2 NPN SILICON RF POWER TRANSISTOR .d e s ig n e d p rim arily for w ideband large-signal o u tput am plifier CONTROLLED " Q "


    OCR Scan     		PDF 0Gfl754û MRF309 MRF309 fir 30 IC IL 1117

    sps 953 transistor data

    Abstract: NPN/sps 953 transistor data
    Text: MOTOROLA Order this document by MRF10502/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF10502 Microwave Pulse Power Transistor Designed for 1 0 2 5 -1 1 5 0 MHz pulse common base amplifier applications such as TCAS, TACAN and M ode-S transmitters. • Guaranteed Performance @ 1090 MHz


    OCR Scan     		PDF MRF10502/D MRF10502 355J-0al sps 953 transistor data NPN/sps 953 transistor data

    bd169

    Abstract: motorola sps transistor sps transistor B0169 bd170
    Text: MOTOROLA Order this document by B0169/D SEMICONDUCTOR TECHNICAL DATA BD169 P lastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTOR NPN SILICON 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi


    OCR Scan     		PDF B0169/D BD169 BD170 BD169 169/D motorola sps transistor sps transistor B0169

    MRF227

    Abstract: MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G
    Text: MOTOROLA SC XSTRS/R F 4bE D b3b72S4 0£m 50fl 7 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF227 The RF Line 3 W - 225 MHz R F POWER TRANSISTOR NPN SILIC ON NPN SILICON RF POWER TRANSISTOR . . . designed for 12.5 Volt large-signal power amplifier applica­


    OCR Scan     		PDF b3b72S4 MRF227 T0-206A O-391 MRF227 MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G

    High voltage fast switching power transistor pnp

    Abstract: 2N6438 2n6437
    Text: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N6438* High-Pow er PNP Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining Voltage —


    OCR Scan     		PDF 2N6437/D 2N6437 2N6438 2N6339 2N6341 High voltage fast switching power transistor pnp 2N6438 2n6437

    Transistor 638 MOTOROLA

    Abstract: 2N6056 MOTOROLA DIODE 851 MOTOROLA eisc REF2667
    Text: M OTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2N6056 NPN Darlington S ilicon Power Transistor Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON


    OCR Scan     		PDF 2N6056/D Transistor 638 MOTOROLA 2N6056 MOTOROLA DIODE 851 MOTOROLA eisc REF2667

    MTP8N45

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R D I• b3b?as4 aoâibîB a ime F I T-ÌÌ-I3 MOTOROLA ■ I SEM ICO NDUCTO R TECHNICAL DATA IRF340 Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF340 V d SS 400 V rDS on >D 0.55 n 10 A This TM O S Power FET is designed for high voltage, high speed


    OCR Scan     		PDF IRF340 MTP8N45

    3fc relay

    Abstract: diode 1.5 ke 36 ca
    Text: MOTOROLA SC XSTRS/R I F 1 4 E D H fc,3fc,72S4 0 0 0 ^ = 1 7 MOTOROLA □ I •l SEMICONDUCTOR TECHNICAL DATA IRF710 N-CHANNEL ENHANCEM ENT-M O DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR Part Number Vd s s IRF71Q 400 V rosion 3.6 n Th is T M O S Power F E T is designed for high voltage, high speed


    OCR Scan     		PDF IRF710 IRF71Q 3fc relay diode 1.5 ke 36 ca

    MC1723

    Abstract: mc1723 ic AMO 0210 DM 0265 R 1E75 MC1723CL schematic of mc1723 MC1723cg MC1723G 15 1e75
    Text: MOTOROLA SC -CTELECOMJ 14E D I b3b?aS3 DQfllflSb fl | T - g g -U -2 -S O RDERING INFORMATION Devfe* MC1723CD MC1723CG MC1723CL MC1723CP MC1723G MC1723L Altern ate Temperature Range TO to 0*0 to crc to (re to -55°C to - 55°C to LM723CH, pA723HC LM723CJ, MA723DC


    OCR Scan     		PDF MC1723CD MC1723CG MC1723CL MC1723CP MC1723G MC1723L LM723CH, JA723HC LM723CJ, fiA723DC MC1723 mc1723 ic AMO 0210 DM 0265 R 1E75 MC1723CL schematic of mc1723 MC1723cg MC1723G 15 1e75

    LM1171

    Abstract: LM317LH lm117l REGULATOR IC 7905 7m 0880 LM117LH LMI 458 DM 0365 R DM 0265 R transistor N14 458
    Text: MOTOROLA SC {TELECOM} 14E D I L.3L.72S3 0001741 0 LM117L LM217L LM317L MOTOROLA Specifications and Applications Inform ation THREE-TERMINAL ADJUSTABLE OUTPUT POSm VE VOLTAGE REGULATORS T h e LM117L/217U317L are adjustable 3-terminal positive volt­ a g e regulators capable of supp lying in excess o f 100 m A over an


    OCR Scan     		PDF LM117L/217L/317L LM117L P0SiT10ttW MCN90N: LM1171 LM317LH REGULATOR IC 7905 7m 0880 LM117LH LMI 458 DM 0365 R DM 0265 R transistor N14 458

    marking CJD

    Abstract: A6 marking MRF947t1 marking 6B
    Text: SC-70/SQT-323 Devices_ Maximum die size 20 mil x 20 mil CASE 419-02 RF Transistors Maximum Ratings Gain-Bandwldth NF @ <§ Device t f Gain @ Marking h Typ GHz lc mA Typ dB MHz Typ dB MHz A H B 8 8 8 15 15 30 2.1 2.1 2.0 1500 1500 1500 10.5 10.5


    OCR Scan     		PDF SC-70/SQT-323 MRF947T1 MRF947BT1 MRF957T1 MUN5211T1 MUNS212T1 MUN5213T1 MUN5214T1 MUN5111T1 MUN5112T1 marking CJD A6 marking marking 6B

    PT9704B

    Abstract: PT9700B 97028 PT9703B PT9701B PT9702B 9703b PT9703 PT-9700
    Text: MOTOROLA SC 4bE D XSTRS/R F • b3b?2S4 0013130 5 ■PlOTt T=-3 3 - 0 I MOTOROLA ■i SEM ICONDUCTOR TECHNICAL DATA PT9700B Seriös The RF Line UHF Pow er T ran sisto rs TO 400 MHz 5 TO 30 WATTS UHF POWER TRANSISTORS NPN SILICON . . . designed primarily for wideband, large-signal output and driver amplifier stages in


    OCR Scan     		PDF 0D1513A T-33-O PT9700B 244c-01, 9703B 9704B PT9701B PT9703B) PT9702B PT9704B) PT9704B 97028 PT9703B 9703b PT9703 PT-9700

    mh19

    Abstract: flyback stepup A770
    Text: MC34060A MC35060A MC33060A MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Precision Switchmode Pulse Width Modulator Control Circuits PRECISION SWITCHMODE PULSE WIDTH MODULATOR CONTROL CIRCUITS The MC35060A/MC34060A/MC33060A are low cost fixed frequency, pulse width modulation control circuits designed primarily for single ended


    OCR Scan     		PDF MC34060A MC35060A MC33060A MC35060A/MC34060A/MC33060A MC33060A M98SC Y1U19C. mh19 flyback stepup A770