Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOTOROLA TIP115 TRANSISTOR Search Results

    MOTOROLA TIP115 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA TIP115 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N5825

    Abstract: MJE254 MSD6100 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 TIP112 motorola
    Text: MOTOROLA Order this document by TIP110/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 1.0 Adc


    Original     		TIP110/D* TIP110/D 1N5825 MJE254 MSD6100 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 TIP112 motorola PDF

    16 amp npn darlington power transistors

    Abstract: MOTOROLA TIP115 transistor BTA 006
    Text: MOTOROLA Order this document by TIP110/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic M edium -Pow er Com plem entary Silicon Transistors T IP 1 1 0 . . . designed for general-purpose amplifier and low -speed switching applications. • • • • • T IP 111*


    OCR Scan     		TIP110/D TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 -220A TMP117* 16 amp npn darlington power transistors MOTOROLA TIP115 transistor BTA 006 PDF

    TIP118

    Abstract: T1P110 MOTOROLA TIP115 transistor TIP 32 transistor t1p115 c 111 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium -Power Com plem entary Silicon TVansistors . . . designed or general-purpose amplifier and low-speed switching applications. High DC Current Gain — hFE = 2500 (Typ @ lc • 1.0 Adc • Collector-Emitter Sustaining Voltage — @ 3 0 mAdc


    OCR Scan     		TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 T0-220AB JE224 TIP118 T1P110 MOTOROLA TIP115 transistor TIP 32 transistor t1p115 c 111 transistor PDF

    motorola transistor PNP

    Abstract: MJE700T
    Text: MOTOROLA SC { DIOD ES/ OPTOi 6 3 6 7 2 5 5 M O T O R O L A SC Ï4 DE | b3t,72SS 0 0 3 7 C14D 1 D I O D E S /O P T O 3 ^C 37940 2C6039 DIE NO. — NPN LINE SOURCE — PL500.E508 NPN D 3 3 -O SILICON POWER TRANSISTOR DICE (continued) J 2C6036 / die no. — pnp


    OCR Scan     		PL500 2C6039 2N6037 2N6038 2N6039 MJE800, MJE801, 2C6036 MJE802, motorola transistor PNP MJE700T PDF

    BU108

    Abstract: C 3883 2SA1046 2SC7 MOTOROLA TIP115 transistor TIP116 TEXAS All similar transistor 2sa715 BU326 BU100 2N6254 REPLACEMENT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 1.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc


    Original     		TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 220AB BU108 C 3883 2SA1046 2SC7 MOTOROLA TIP115 transistor TIP116 TEXAS All similar transistor 2sa715 BU326 BU100 2N6254 REPLACEMENT PDF

    SGS115

    Abstract: MJE3311 ON632 BOW84 B0878 041K2 2SB750 87CI
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max (8) tf Max (8) TOper Max ee) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 BOX88 GT81 00 BOW84 BOW84 BOW84 MPS-A7S


    Original     		BOX88 BOW84 MPS-A76 MPSA76 2SB888 2SB977A SGS115 MJE3311 ON632 B0878 041K2 2SB750 87CI PDF

    diode D45C

    Abstract: JE 800 transistor L146 IC BD800
    Text: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*


    OCR Scan     		340B-03 JF16006A JF10012# 100/12k JF16212* JF16018* JF16206 D44VH10 D45VH diode D45C JE 800 transistor L146 IC BD800 PDF

    tl431 TRANSISTOR equivalent

    Abstract: motorola TO92 triac TL431B TL431CD TL431CDM TL431CLP TL431CP TL431ID TL431IDM TL431ILP
    Text: Order this document by TL431/D TL431, A, B Series Programmable Precision References The TL431, A, B integrated circuits are three–terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V


    Original     		TL431/D TL431, tl431 TRANSISTOR equivalent motorola TO92 triac TL431B TL431CD TL431CDM TL431CLP TL431CP TL431ID TL431IDM TL431ILP PDF

    tl431cp

    Abstract: TL431A
    Text: Order this document by TL431/D TL431, A, B Series Programmable Precision References PROGRAMMABLE PRECISION REFERENCES The TL431, A, B integrated circuits are three–terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a


    Original     		TL431/D TL431, TL431/D* tl431cp TL431A PDF

    TL431

    Abstract: TL431CDM TL431IDM motorola TO92 triac TL431CP TL431B TL431CD TL431CLP TL431ID TL431ILP
    Text: Order this document by TL431/D TL431, A, B Series Programmable Precision References The TL431, A, B integrated circuits are three–terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V


    Original     		TL431/D TL431, DEVICETL431/D TL431 TL431CDM TL431IDM motorola TO92 triac TL431CP TL431B TL431CD TL431CLP TL431ID TL431ILP PDF

    tl431 TRANSISTOR equivalent

    Abstract: TL431CP transistor TL431 to92 transistor TL431AC TL431CDM TL431IDM TL431ILP TL431IP TL431BILP TL431 transistor
    Text: Order this document by TL431/D TL431, A, B Series Programmable Precision References The TL431, A, B integrated circuits are three–terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V


    Original     		TL431/D TL431, tl431 TRANSISTOR equivalent TL431CP transistor TL431 to92 transistor TL431AC TL431CDM TL431IDM TL431ILP TL431IP TL431BILP TL431 transistor PDF

    transistor TL431AC

    Abstract: TL431CP TL431CDM TL431IP TL431IDM TL431ILP TL431AILP motorola TO92 triac TL431ACP LM11 op amp
    Text: Order this document by TL431/D TL431, A, B Series Programmable Precision References The TL431, A, B integrated circuits are three–terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V


    Original     		TL431/D TL431, DEVICETL431/D transistor TL431AC TL431CP TL431CDM TL431IP TL431IDM TL431ILP TL431AILP motorola TO92 triac TL431ACP LM11 op amp PDF

    MJL21194 equivalent

    Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.


    Original     		MJL21193 MJL21194 MJL21193* MJL21194* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJL21194 equivalent MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications PDF

    BU108

    Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS


    Original     		2N5194, 2N5195. 2N5191 2N5192* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100 PDF

    2SC105

    Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp


    Original     		2N4918, 2N4919, 2N4920 2N4921 2N4923* TIP73B TIP74 TIP74A TIP74B TIP75 2SC105 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent PDF

    All similar transistor 2sa715

    Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc


    Original     		BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244C* TIP73B TIP74 All similar transistor 2sa715 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference PDF

    2SA1046

    Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated


    Original     		2N6497 2N6498 2N6498* TIP73B TIP74 TIP74A TIP74B 2SA1046 BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876 PDF

    2SB631

    Abstract: equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488* PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes — hFE = 20 – 150 @ IC = 5.0 Adc


    Original     		2N6487, 2N6490 2N6488, 2N6491 220AB 2N6487 2N6488* 2N6491* TIP73B 2SB631 equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100 PDF

    2SA1046

    Abstract: 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc


    Original     		2N6050, 2N6057 2N6051, 2N6058 2N6052, 2N6059 TIP73B TIP74 TIP74A TIP74B 2SA1046 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT PDF

    BC 458

    Abstract: 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD31,C* PNP MJD32,C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • SILICON


    Original     		MJD31 MJD32 TIP31 TIP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BC 458 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161 PDF

    2sc-144

    Abstract: 2SC105 BUX98A pin configuration NPN transistor tip41c BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc


    Original     		TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 220AB 2sc-144 2SC105 BUX98A pin configuration NPN transistor tip41c BU326 BU108 BU100 PDF

    BU108

    Abstract: MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc


    Original     		2N3773 2N6609 2N3773* 2N6609 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419 PDF

    2SC124

    Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436


    Original     		2N6436 2N6437 2N6438 2N6338 2N6341 2N6438* Devi32 TIP73B 2SC124 BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100 PDF

    2N3055 plastic

    Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art


    Original     		BUT11AF BUT11AF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 plastic BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100 PDF